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EP0097767A2
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A semiconductor device
Assignee: International Business Machines Corp
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Filing: 1983-03-15
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Granted: —
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Expires: 2003-03-15
Abstract
Abstract A semiconductor processor for signals such as are conveyed by fibre optics wherein the processor structure accommodates lattice mismatch and minimizes the effect of misfit dislocations. The structure permits using materials having favorable absorption properties at the 1 micrometer wavelength of optical signals. A binary semiconductor is employed with graded regions produced by adding a different third ingredient in two places so that a wide band optically transparent emitter with a graded base and graded collector are provided. The ingredients impart a strong absorption in the optical signal wavelength together with superior semiconductor carrier transit time. A structure for a silicon and germanium oxide based optical signal fibre uses a GaAlAs emitter, a base that is graded to Ga 25 In 75 As at the collector and then back to GaAs at the substrate.
Inventors
- 👤 William Paul Dumke
- 👤 Jerry Macpherson Woodall
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 08:41
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/127; H10F71/1272; H10D; H10D10/00; H10D10/80; H10D10/821; H10F30/00; H10F30/20; H10F30/21; H10F30/24; H10F30/245; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
73 words
A semiconductor device comprising emitter, base and collector regions, characterised in that said emitter region has an energy gap of a first magnitude and forms a first junction with a base region having an energy gap of a second magnitude narrower than said emitter energy gap, said collector region forming a second junction with said base region and said base energy gap decreasing with distance from said first junction to said second junction.
Claim 2
Dependent Claim
73 words
A semiconductor device comprising emitter, base and collector regions, characterised in that said emitter region has an energy gap of a first magnitude and forms a first junction with a base region having an energy gap of a second magnitude narrower than said emitter energy gap, said collector region forming a second junction with said base region and said base energy gap decreasing with distance from said first junction to said second junction.
Claim 3
Dependent Claim
19 words
A semiconductor device as claimed in claim 1, in which said regions are epitaxial layers formed on a substrate.
Claim 4
Dependent Claim
153 words
A semiconductor device as claimed in claim 2, in which said emitter layer is of A 1-x D x B ingredients, said base layer is of A 1-x C x B ingredients, the band gap of the semiconductor of AB ingredients being greater than the band gap of the semiconductor of CB ingredients and where the lattice constant of said semiconductor A 1-x D x B is essentially equal to the lattice constant of said semiconductor A 1-x C x B at the emitter-base junction and where 0 < x < 1 and x increases with distance from said emitterbase junction at the interface of said emitter and said base layers, said collector layer being of A l-x C x B ingredients where the value of x decreases with distance from the base-collector junction at the interface between said base and collector layers and said substrate layer being of A and B ingredients.
Claim 5
Dependent Claim
23 words
A semiconductor device as claimed in claim 3, in which A is Ga, D is Al, C is In and B is As.
Claim 6
Independent Claim
167 words
A method of forming a semiconductor device characterised in that the method comprises the steps of providing a substrate layer of n conductivity type monocrystalline AB semiconductor material having two essentially parallel broad area surfaces, forming on a first said broad area surface to be exposed to an optical signal an epitaxial collector layer of A 1-x C x B wherein x increases with distance from said substrate layer, forming on said collector layer an epitaxial base layer forming a base-collector p-n junction with said base layer, said base layer being of A 1-x C x B semiconductor material wherein x decreases with distance from said p-n junction, forming an emitter epitaxial layer on said base layer at an emitter-base p-n junction, said emitter layer being of A 1-x D x B semiconductor material having a higher band gap and lattice matched to said base semiconductor material at said emitter-base p-n junction, and applying an electrical contact to each said substrate, said base and said emitter layers.
Claim 7
Independent Claim
167 words
A method of forming a semiconductor device characterised in that the method comprises the steps of providing a substrate layer of n conductivity type monocrystalline AB semiconductor material having two essentially parallel broad area surfaces, forming on a first said broad area surface to be exposed to an optical signal an epitaxial collector layer of A 1-x C x B wherein x increases with distance from said substrate layer, forming on said collector layer an epitaxial base layer forming a base-collector p-n junction with said base layer, said base layer being of A 1-x C x B semiconductor material wherein x decreases with distance from said p-n junction, forming an emitter epitaxial layer on said base layer at an emitter-base p-n junction, said emitter layer being of A 1-x D x B semiconductor material having a higher band gap and lattice matched to said base semiconductor material at said emitter-base p-n junction, and applying an electrical contact to each said substrate, said base and said emitter layers.
Claim 8
Dependent Claim
34 words
A method as claimed in claim 5, in which the substrate is GaAs semiconductor material, base and collector layers are Ga 1-x In x As and the emitter is Ga 1-x Al x As.
References Cited (Backward Citations)
No citation records indexed.
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