EP0095826A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor laser
Assignee: Sharp Corp
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Filing: 1983-03-22
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Granted: —
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Expires: 2003-03-22
Abstract
Abstract A window V-channeled substrate inner stripe semiconductor laser includes window regions formed at both ends of a stimulated region. The stimulated region includes a crescent active layer, and each of the window regions includes a plane active layer for transferring the laser beam emitted from the stimulated region to the mirror. The window regions ensure a stable operation of the laser oscillation and a high optical power for catastrophic optical damage.
Inventors
- 👤 Saburo Yamamoto
- 👤 Hiroshi Hayashi
- 👤 Seiki Yano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 05:17
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/24; H01S5/10; H01S5/16; H01S5/22; H01S5/223; H01S5/2232; H01S5/2234
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
40 words
A window structure semiconductor laser comprising: a stimulated region including a crescent active layer; and window regions formed at both ends of said stimulated region, each of said window regions including a plane active layer which functions as a waveguide.
Claim 2
Dependent Claim
40 words
A window structure semiconductor laser comprising: a stimulated region including a crescent active layer; and window regions formed at both ends of said stimulated region, each of said window regions including a plane active layer which functions as a waveguide.
Claim 3
Dependent Claim
30 words
The window structure semiconductor laser of claim 1, wherein: said stimulated region defines a waveguide width which is narrower than a waveguide width determined by said each of window regions.
Claim 4
Dependent Claim
61 words
The window structure semiconductor laser of claim 2, further comprising: a pair of tapered coupling regions formed between said stimulated region and each of said window regions, each of said pair of tapered coupling regions defining a waveguide width linearlly increasing from the waveguide width defined by said stimulated region to the waveguide width defined by said each of window regions.
Claim 5
Dependent Claim
118 words
A window structure semiconductor laser comprising: a substrate; a current blocking layer formed on said substrate; a V-shaped groove formed in said current blocking layer, said V-shaped groove has a wider section, and narrower sections disposed at both ends of said window structure semiconductor laser; a cladding layer formed on said current blocking layer; an active layer formed on said cladding layer, said active layer having a crescent portion formed at a position' corresponding to said wider section of said V-shaped groove formed in said current blocking layer, and plane portions formed at positions corresponding to said narrower sections of said V-shaped groove formed in said current blocking layer; and another cladding layer formed on said active layer.
Claim 6
Dependent Claim
118 words
A window structure semiconductor laser comprising: a substrate; a current blocking layer formed on said substrate; a V-shaped groove formed in said current blocking layer, said V-shaped groove has a wider section, and narrower sections disposed at both ends of said window structure semiconductor laser; a cladding layer formed on said current blocking layer; an active layer formed on said cladding layer, said active layer having a crescent portion formed at a position' corresponding to said wider section of said V-shaped groove formed in said current blocking layer, and plane portions formed at positions corresponding to said narrower sections of said V-shaped groove formed in said current blocking layer; and another cladding layer formed on said active layer.
Claim 7
Dependent Claim
61 words
The window structure semiconductor laser of claim 4, wherein said current blocking layer has thicker sections formed at the positions corresponding to said narrower sections of said V-shaped groove, whereby said cladding layer formed between said current blocking layer and said active layer is separated from said substrate by said current blocking layer at said narrower sections of said V-shaped groove.
Claim 8
Dependent Claim
38 words
The window structure semiconductor laser of claim 4, wherein: said substrate comprises a p-GaAs substrate; said current blocking layer comprises an n-GaAs layer; said cladding layer comprises a p-GaAlAs layer; and said active layer comprises a GaAs layer.
Claim 9
Dependent Claim
39 words
The window structure semiconductor laser of claim 4, wherein : said substrate comprises a p-GaAs substrate; said current blocking layer comprises an n-GaAs layer; said cladding layer comprises a p-GaAlAs layer; and said active layer comprises a GaAlAs layer.
Claim 10
Dependent Claim
38 words
The window structure semiconductor laser of claim 4, wherein: said wider section of the V-shaped groove has a length of 150 µm; and each of said narrower sections of said V-shaped groove has a length of 50 µm.
References Cited (Backward Citations)
No citation records indexed.
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