EP0095328A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for manufacturing semiconductor device by controlling thickness of insulating film at peripheral portion of element formation region
Assignee: Toshiba Corp
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Filing: 1983-05-19
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Granted: —
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Expires: 2003-05-19
Abstract
Abstract A method of manufacturing a semiconductor device wherein a thickness of an insulating film (30) at a peripheral portion of an element formation region of a semiconductor substrate (21) is increased. The feature of this method is that an antioxidant film (23) is formed on the element formation region and subsequently said semiconductor substrate (21) is exposed to an oxygen atmosphere, thereby locally oxidizing that portion of the film (23) which surrounds said element formation region.
Inventors
- 👤 Kei Kurosawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 01:10
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/014; H10W10/10; H10W10/13; H10W10/17; Y; Y10; Y10S; Y10S438/00; Y10S438/981
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
199 words
In a method for manufacturing a semiconductor device wherein a thickness of an insulating film at a peripheral portion of an element formation region is controlled, having a first step of forming a field insulating film in a groove so as to have a flat surface after an antietching mask is formed on said semiconductor substrate, excluding a prospective field region, and after said prospective field region is etched to form said groove, and a second step of forming a desired element in said element formation region isolated by said field insulating film, characterized in that the first step comprises the steps of: (i) forming said antietching mask (24) on said semiconductor substrate (21) through an antioxidant film (23), said antietching mask (24) being formed except at said prospective field region; (ii) selectively etching said prospective field region to form said groove; (iii) exposing said semiconductor substrate (21) in an oxygen atmosphere while said antioxidant film (23) is left thereon, thereby locally oxidizing a portion surrounding said element formation region; and (iv) depositing said field insulating film (27, 27 1 , 27 2 ) in said groove before or after step (iii) so as to have the flat surface.
Claim 2
Dependent Claim
199 words
In a method for manufacturing a semiconductor device wherein a thickness of an insulating film at a peripheral portion of an element formation region is controlled, having a first step of forming a field insulating film in a groove so as to have a flat surface after an antietching mask is formed on said semiconductor substrate, excluding a prospective field region, and after said prospective field region is etched to form said groove, and a second step of forming a desired element in said element formation region isolated by said field insulating film, characterized in that the first step comprises the steps of: (i) forming said antietching mask (24) on said semiconductor substrate (21) through an antioxidant film (23), said antietching mask (24) being formed except at said prospective field region; (ii) selectively etching said prospective field region to form said groove; (iii) exposing said semiconductor substrate (21) in an oxygen atmosphere while said antioxidant film (23) is left thereon, thereby locally oxidizing a portion surrounding said element formation region; and (iv) depositing said field insulating film (27, 27 1 , 27 2 ) in said groove before or after step (iii) so as to have the flat surface.
Claim 3
Dependent Claim
147 words
A method according to claim 1, characterized in that said step (iv) comprises the steps of selectively forming a first insulating film (27 1 ) with a narrow groove (28) around said element formation region using said antietching.mask (24) as a liftoff material, depositing a second insulating film (27 2 ) so as to cover an entire surface which includes said narrow groove (28), applying a flowable material film (29) to a surface of said second insulating film (27 2 ) so as to obtain a structure which has a flat surface, and uniformly etching said flowable material film (29) and said first and second insulating films (27,, 27 2 ) so as to leave said second insulating film (27 2 ) only in said narrow groove (28); and said step (iii) is performed after said first insulating film (27 1 ) is formed in said groove.
Claim 4
Dependent Claim
149 words
A method according to claim 1, characterized in that said step (iv) comprises the steps of selectively forming a first insulating film (27 1 ) with a narrow groove (28) around said element formation region using said antietching mask (24) as a liftoff material, depositing a second insulating film (27 2 ) so as to cover an entire surface which includes said narrow groove (28), applying a flowable material film (29) to a surface of said second insulating film (27 2 ) so as to obtain a structure which has a flat surface, and uniformly etching said flowable material film (29) and said first and second insulating films (27,, 27 2 ) so as to leave said second insulating film (27 2 ) only in said narrow groove (28); and said step (iii) is performed after said second insulating film (27 2 ) is left in said narrow groove.
Claim 5
Dependent Claim
149 words
A method according to claim 1, characterized in that said step (iv) comprises the steps of selectively forming a first insulating film (27 1 ) with a narrow groove (28) around said element formation region using said antietching mask (24) as a liftoff material, depositing a second insulating film (27 2 ) so as to cover an entire surface which includes said narrow groove (28), applying a flowable material film (29) to a surface of said second insulating film (27 2 ) so as to obtain a structure which has a flat surface, and uniformly etching said flowable material film (29) and said first and second insulating films (27 1 , 27 2 ) so as to leave said second insulating film (27 2 ) only in said narrow groove (28); and step (iii) is performed before said first insulating film (27 1 ) is formed in said groove.
Claim 6
Dependent Claim
66 words
A method according to claim 1, characterized in that said step (iii) comprises the step of forming an oxide film such that a peripheral portion of said oxide film has a thickness greater than a thickness of a central portion thereof by 0.1 µm, said peripheral portion being within a range of 0.1 to 0.2 µm with respect to a boundary of said element formation region.
Claim 7
Dependent Claim
31 words
A method according to claim 1, characterized in that said step (i) comprises the step of forming said antioxidant film after said thermal oxide film is formed on said semiconductor substrate.
References Cited (Backward Citations)
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