EP0093848A2
Expired / Lapsed
EP
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Semiconductor device fabrication process utilizing an added annealing step
Assignee: International Business Machines Corp
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Filing: 1983-03-04
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Granted: —
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Expires: 2003-03-04
Abstract
Abstract An improvement in the method of fabricating semiconductor devices to reduce device leakage by intervening a hydrogen annealing step at about 900°C for about 30 minutes after the steps of epitaxial growth and before the step of oxidation of that epitaxial layer.
Inventors
- 👤 Emily Mae Fayo
- 👤 Carl Henry Orner
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 11:08
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/65; H10P14/6502; H10P14/6512; H10P95/00; H10P95/94
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
69 words
Process for fabricating silicon semiconductor devices including the steps of growing an epitaxial layer upon the silicon wafer and thereafter oxidizing the thus-processed wafer, characterized by the addition of a step, between the said two steps, consisting of annealing the wafer in an ambient reducing atmosphere containing from about 10% to 100% hydrogen at a temperature between 800° and 1000°C for a time between 20 minutes and 40 minutes.
Claim 2
Dependent Claim
69 words
Process for fabricating silicon semiconductor devices including the steps of growing an epitaxial layer upon the silicon wafer and thereafter oxidizing the thus-processed wafer, characterized by the addition of a step, between the said two steps, consisting of annealing the wafer in an ambient reducing atmosphere containing from about 10% to 100% hydrogen at a temperature between 800° and 1000°C for a time between 20 minutes and 40 minutes.
Claim 3
Dependent Claim
18 words
Process according to claim 1, characterized in that the temperature is 900°C and the time is 30 minutes.
Claim 4
Dependent Claim
16 words
Process according to claim 1, characterized in that the hydrogen ambient is derived from forming gas.
References Cited (Backward Citations)
No citation records indexed.
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