Bipolar semi-conductor device and MOS circuit with such a device

Abstract

Abstract The invention concerns integrated circuits produced by means of an MOS technology. The device of the invention comprises an MOS transistor produced in a semiconductor (11). The invention consists in forward biasing the junction formed by the region (14) and the semiconductor (11) and in biasing the gate (G) in such a manner as to prevent any inversion phenomenon in the channel zone. The transistor formed by an emitter (E) connected to the region (14), a collector (C) connected to the region (13) and a base (B) connected to the semiconductor (11) has a bipolar transistor behaviour. The semiconductor (11) may be constituted by a cavity produced in a substrate (10) of opposite type, in which case the device comprises another electrode (S) which is subjected to a voltage such that the cavity-substrate junction is reverse-biased. The invention is applicable to integrated circuits using MOS technology. <IMAGE>

Inventors

• 👤 Eric A. Vittoz

Bibliographic Details