EP0092871B1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor integrated circuits and method of manufacturing
Assignee: Koninklijke Philips NV
•
Filing: 1983-04-19
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Granted: 1990-02-07
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Expires: 2003-04-19
Abstract
No abstract record available.
Inventors
- 👤 Sheldon Chil Pin Lim
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 22:11
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
145 words
An integrated circuit comprising a plurality of semiconductive devices and having a semiconductor body which has a surface on which an insulating layer is present, said insulating layer carrying a conductive pattern which comprises a titanium-tungsten-nitride layer characterized in that memory elements are present, each comprising at least one of said semiconductor devices coupled in series with a fusible link structure, that at least one additional semiconductive device is present not forming a part of a memory element, said additional semiconductive device including a region within said semiconductor body lying along said surface, said region being covered by a multi-layer structure with a first metal layer serving as diffusion barrier and being located between a second metal layer superimposed thereon and said region, both said fusible link structure and said diffusion barrier layer being formed from the titanium-tungsten-nitride layer, and having substantially the same thickness.
Claim 2
Dependent Claim
145 words
An integrated circuit comprising a plurality of semiconductive devices and having a semiconductor body which has a surface on which an insulating layer is present, said insulating layer carrying a conductive pattern which comprises a titanium-tungsten-nitride layer characterized in that memory elements are present, each comprising at least one of said semiconductor devices coupled in series with a fusible link structure, that at least one additional semiconductive device is present not forming a part of a memory element, said additional semiconductive device including a region within said semiconductor body lying along said surface, said region being covered by a multi-layer structure with a first metal layer serving as diffusion barrier and being located between a second metal layer superimposed thereon and said region, both said fusible link structure and said diffusion barrier layer being formed from the titanium-tungsten-nitride layer, and having substantially the same thickness.
Claim 3
Dependent Claim
31 words
An integrated circuit as claimed in Claim 1, chracterized in that said multi-layer structure constitutes an electrical contact to an emitter region of said additional semiconductive device being a bipolar transistor.
Claim 4
Dependent Claim
42 words
An integrated circuit as claimed in Claim 2, characterized in that said additional transistor is a lateral transistor with an emitter and a collector region which are laterally spaced apart, said multi-layer structure also forming an electrical contact to said collector region.
Claim 5
Dependent Claim
25 words
An integrated circuit as claimed in any of Claims 1 to 3, characterized in that said titanium-tungsten-nitride layer has a thickness of about 60 nm.
Claim 6
Dependent Claim
25 words
An integrated circuit as claimed in any of Claims 1 to 4, characterized in that said titanium-tungsten-nitride layer has a resistivity of about 2,7 micro-ohm-meter.
Claim 7
Dependent Claim
40 words
An integrated circuit as claimed in any of Claims 1 to 5, characterized in that said memory elements are arranged in a matrix with rows and columns, each memory element being connected between a row conductor and a column conductor.
Claim 8
Dependent Claim
24 words
An integrated circuit as claimed in any of claims 1 to 6, characterized in that said at least one semiconductive device is a diode.
Claim 9
Dependent Claim
17 words
An integrated circuit as claimed in Claim 7, characterized in that said diode is a Schottky diode.
Claim 10
Independent Claim
135 words
A method of fabricating a semiconductor integrated circuit structure comprising: (a) providing a layer of insulating material over a surface of a semiconductor body; (b) forming openings in said insulating layer; (c) forming a first plurality of discrete metallic deposits on the surface of said insulating layer which are to serve as fusible link for electrical connection with semiconductor devices of said integrated circuit and also forming a second plurality of discrete metallic deposits within said openings and in electrical connnection with said semiconductor regions of desired conductivity type, which deposits are to serve as metal diffusion barrier layers, characterized in that both said first and second plurality of metallic deposits are deposited simultaneously from the reaction of titanium, tungsten, and nitrogen, and are sub- stantilly composed of titanium-tungsten-nitride and have substantially the same thickness.
Claim 11
Independent Claim
135 words
A method of fabricating a semiconductor integrated circuit structure comprising: (a) providing a layer of insulating material over a surface of a semiconductor body; (b) forming openings in said insulating layer; (c) forming a first plurality of discrete metallic deposits on the surface of said insulating layer which are to serve as fusible link for electrical connection with semiconductor devices of said integrated circuit and also forming a second plurality of discrete metallic deposits within said openings and in electrical connnection with said semiconductor regions of desired conductivity type, which deposits are to serve as metal diffusion barrier layers, characterized in that both said first and second plurality of metallic deposits are deposited simultaneously from the reaction of titanium, tungsten, and nitrogen, and are sub- stantilly composed of titanium-tungsten-nitride and have substantially the same thickness.
Claim 12
Dependent Claim
74 words
A method as claimed on Claim 9, characterized in that said metallic deposits are reactively DC sputtered from a target of composition which 30 atomic % titanium and 70 atomic % tungsten, and wherein said nitrogen is present with argon at a partial pressure of nitrogen of about 3.3 x 10- 2 Pa (2.5 x 10- 4 torr) and a total argon plus nitrogen pressure of about 0.2 Pa (1.5 x 10- 3 torr).
Claim 13
Dependent Claim
25 words
A method as claimed in Claim 9 or 10, characterized in that said titanium-tungsten-nitride film is deposited to a thickness of about 60 nm (600A).
References Cited (Backward Citations)
No citation records indexed.
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