EP0092818A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for grinding the surface of a semiconductor wafer
Assignee: Disco Corp
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Filing: 1983-04-22
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Granted: —
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Expires: 2003-04-22
Abstract
Abstract A dresser made of bonded alundum-type abrasive is ground by a rotating blade made of bonded super abrasive to dress the blade. The surface of a semiconductor wafer is ground by the rotating dressed blade to convert it into a matte-finished surface substantially free from saw marks.
Inventors
- 👤 Mitsuo Sekiya
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 04:29
CPC Classifications
H; H10; H10P; H10P50/00; H10P90/00; H10P90/12; H10P90/123; B; B24; B24B; B24B7/00; B24B7/20; B24B7/22; B24B7/228; B24D; B24D7/00; B24D7/02
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
46 words
A method for grinding the surface of a semiconductor wafer by a rotating blade made of bonded super abrasive, said method comprising dressing said blade, prior to the grinding of the wafer surface, by grinding a dresser made of bonded alundum-type abrasive with said rotating blade.
Claim 2
Independent Claim
46 words
A method for grinding the surface of a semiconductor wafer by a rotating blade made of bonded super abrasive, said method comprising dressing said blade, prior to the grinding of the wafer surface, by grinding a dresser made of bonded alundum-type abrasive with said rotating blade.
Claim 3
Dependent Claim
100 words
The method of claim 1 wherein in the grinding of the semiconductor wafers, the blade is disposed so that its axis of rotation is nearly perpendicular to the wafer surface, and the blade and the semiconductor wafer are moved relative to each other in a direction nearly perpendicular to the axis of rotation of the blade; and in the dressing of the blade, the blade and the dresser are moved relative to each other in a direction nearly perpendicular to the axis of rotation of the blade in substantially the same way as in the grinding of the semiconductor wafer.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein the blade is made of bonded diamond abrasive.
Claim 5
Dependent Claim
24 words
The method of claim 3 wherein the diamond abrasive has a grain size corresponding to a U. S. mesh number of 1200 to 100.
Claim 6
Dependent Claim
24 words
The method of claim 4 wherein the diamond abrasive has a grain size corresponding to a U. S. mesh number of 1000 to 150.
Claim 7
Dependent Claim
24 words
The method of claim 5 wherein the diamond abrasive has a grain size corresponding to a U. S. mesh number of 800 to 230.
Claim 8
Dependent Claim
21 words
The method of claim 1 wherein the blade is provided in the annular free end portion of a rotating support member.
Claim 9
Independent Claim
28 words
The method of claim '7 wherein the blade is of an annular shape extending along the entire circumference of the annular free end portion of the support member.
Claim 10
Dependent Claim
13 words
The method of claim 3 wherein the diamond abrasive is bonded by plating.
Claim 11
Dependent Claim
24 words
The method of claim 3 wherein the blade is formed into a predetermined shape by bonding the diamond abrasive by a metal bonding method.
Claim 12
Dependent Claim
33 words
The method of claim 1 wherein at least the free end portion of the blade extends at an angle α of 100 to 160 degrees to the axis of rotation of the blade.
Claim 13
Dependent Claim
13 words
The method of claim 11 wherein the angleOC is 110 to 150 degrees.
Claim 14
Dependent Claim
14 words
The method of claim 12 wherein the angle α is 120 to 140 degrees.
Claim 15
Dependent Claim
21 words
The method of claim 11 wherein the free end portion of the blade has a thickness of 0.05 to 2.00 mm.
Claim 16
Dependent Claim
21 words
The method of claim 14 wherein the free end portion of the blade has a thickness of 0.08 to 1.00 mm.
Claim 17
Dependent Claim
21 words
The method of claim 15 wherein the free end portion of the blade has a thickness of 0.10 to 0.50 mm.
Claim 18
Dependent Claim
21 words
The method of claim 1 wherein the peripheral speed of the free end of the blade is 200 to 3000 m/min.
Claim 19
Dependent Claim
21 words
The method of claim 17 wherein the peripheral speed of the free end of the blade is 300 to 2000 m/min.
Claim 20
Dependent Claim
21 words
The method of claim 18 wherein the peripheral speed of the free end of the blade is 400 to 1300 m/min.
Claim 21
Dependent Claim
23 words
The method of claim 2 wherein the relative moving speed of the blade and the semiconductor wafer is not more than 1000 mm/min.
Claim 22
Dependent Claim
13 words
The method of claim 1 wherein the semiconductor wafer is made of silicon.
Claim 23
Dependent Claim
15 words
The method of claim 1 wherein said semiconductor wafer is that before providing circuits thereon.
References Cited (Backward Citations)
EP0039209A1
Cited
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