EP0091984A2
Expired / Lapsed
EP
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Integrated circuit devices comprising dielectric isolation regions and methods for making such devices
Assignee: Toshiba Corp
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Filing: 1982-09-17
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Granted: —
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Expires: 2002-09-17
Abstract
Abstract A method is proposed for manufacturing a semiconductor device, which comprises forming groove(s) (103) having a vertical wall in a semiconductor substrate (101); doping the same type of impurity as that of the substrate (101) at a dose of not less than 1 x 10 14 cm- 2 or the opposite type of impurity to that of the substrate (101) in said groove(s) (103) to form an impurity region (104); filling the groove(s) (103) with an insulating material to form a field region (106). A semiconductor device having an impurity region (104) of the same conductivity type as that of the semiconductor substrate (101) under a buried field region and of a sheet resistance ps = 50 ohms/D is also proposed.
Inventors
- 👤 Hiroshi Iwai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 09:31
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/112; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/0145; H10W10/0148; H10W10/10; H10W10/17; H10W20/00; H10W20/01; H10W20/021
Claims Analysis
Total Claims: 45
Claim 1
Independent Claim
160 words
A method for manufacturing a semiconductor device, comprising the steps of: (a) forming at least one groove (103) which has vertical or substantially vertical wall in a desired portion of a semiconductor substrate (101); (b) selectively doping an impurity, whose conductivity type is the same as that of said semiconductor substrate (101) at a dose of not less than 1 x10 14 cm -2 or an impurity, whose conductivity type is opposite to that said semiconductor substrate (101), in said at least one groove to form an impurity region (104, 104'); and (c) depositing an insulating material to cover an entire surface of said semiconductor substrate including said at least one groove to a thickness greater than half a width of a shorter side of an opening of said at least one groove, and forming a field region (106) by etching an insulating film of said insulating material to leave said insulating material in said at least one groove (103).
Claim 2
Independent Claim
160 words
A method for manufacturing a semiconductor device, comprising the steps of: (a) forming at least one groove (103) which has vertical or substantially vertical wall in a desired portion of a semiconductor substrate (101); (b) selectively doping an impurity, whose conductivity type is the same as that of said semiconductor substrate (101) at a dose of not less than 1 x10 14 cm -2 or an impurity, whose conductivity type is opposite to that said semiconductor substrate (101), in said at least one groove to form an impurity region (104, 104'); and (c) depositing an insulating material to cover an entire surface of said semiconductor substrate including said at least one groove to a thickness greater than half a width of a shorter side of an opening of said at least one groove, and forming a field region (106) by etching an insulating film of said insulating material to leave said insulating material in said at least one groove (103).
Claim 3
Dependent Claim
42 words
A method according to claim 1., wherein said impurity in step (b) has the conductivity type opposite to the conductivity type of said semiconductor substrate and is ion-implanted in a bottom of said at least one groove to form a wiring layer.
Claim 4
Dependent Claim
74 words
A method according to claim 1, wherein after said at least one groove (103) is formed in said. semiconductor substrate (101) and said impurity is ion-implanted, and before said insulating material is deposited, an oxide film or a nitride film which does not block said at least one groove is grown by oxidizing or nitrifying the entire surface of said semiconductor substrate (101) or at least part of said at least one groove (103).
Claim 5
Dependent Claim
69 words
A method according to claim 1, wherein after said at least one groove (103) is formed in said semiconductor substrate (101) and before said impurity is ion-implanted, an oxide film or a nitride film which does not block said at least one groove (103) is grown by oxidizing or nitrifying the entire surface of said semiconductor substrate (101) or at least part of said at least one groove (103).
Claim 6
Dependent Claim
52 words
A method according to claim 1, wherein after said insulating film is deposited, a low-melting point material is doped on an entire surface layer or part of a surface layer of said insulating film and is annealed to melt a doped layer of said insulating film, and said insulating film is etched.
Claim 7
Dependent Claim
48 words
A method according to claim 1, wherein after said insulating material is deposited, a low-melting point insulating film is deposited on an entire surface or part of a surface of said insulating film and is melted, and said low-melting point insulating film and said insulating film are etched.
Claim 8
Dependent Claim
70 words
A method according to claim 1, wherein said impurity whose conductivity type is the same as the conductivity type of said semiconductor substrate (101) is doped in at least one part of said at least one groove (103), and said impurity whose conductivity type is opposite to the conductivity type of said semiconductor substrate (101) is doped in at least the other part of said at feast one groove (103).
Claim 9
Dependent Claim
53 words
A method according to claim 7, wherein immediately after said impurity whose conductivity type is opposite to the conductivity type of said semiconductor substrate (101) is doped in said at least one groove (103)said impurity whose conductivity type is the same as the conductivity type of said semiconductor substrate (101) is doped therein.
Claim 10
Dependent Claim
118 words
A method according to claim 1, wherein one part of said at least one groove (103) is shallower than a diffusion depth of said impurity region (104, 104') formed in said semiconductor substrate (101), and the other part of said at least one groove (103) is deeper than the diffusion depth of said impurity region (104, 104'), whereby a wiring layer which has a conductivity type opposite to the conductivity type of said semiconductor substrate (101) and which is formed under said one part of said at least one groove (103) is electrically connected to a region of said impurity region (104, 104`), which has the same conductivity type as the conductivity type of said semiconductor substrate (101).
Claim 11
Independent Claim
207 words
A method for manufacturing a semiconductor device, comprising the steps of: forming at least one groove (103) which has vertical or substantially vertical wall in a desired portion of a semiconductor substrate (101); selectively doping an impurity, whose conductivity type is the same as that of said semiconductor substrate (101) at a dose of not less than 1 x 10 14 cm -2 or an impurity, whose conductivity type is opposite to said semiconductor substrate, in said at least one groove (103) to form an impurity region; depositing an insulating material on said semiconductor substrate (101) including said at least one groove (103) to a thickness greater than half of a width of a shorter side of an opening of said at least one groove (103); after forming a mask on at least one of an insulating film portion which includes part of an insulating film of said insulating material formed in and on said at least one groove (103) and another part of said insulating film which corresponds to a prospective field region, etching said insulating, film to leave said insulating material in said at least one groove (103) so as to form field regions (106) in and out of said at least one groove (103).
Claim 12
Independent Claim
207 words
A method for manufacturing a semiconductor device, comprising the steps of: forming at least one groove (103) which has vertical or substantially vertical wall in a desired portion of a semiconductor substrate (101); selectively doping an impurity, whose conductivity type is the same as that of said semiconductor substrate (101) at a dose of not less than 1 x 10 14 cm -2 or an impurity, whose conductivity type is opposite to said semiconductor substrate, in said at least one groove (103) to form an impurity region; depositing an insulating material on said semiconductor substrate (101) including said at least one groove (103) to a thickness greater than half of a width of a shorter side of an opening of said at least one groove (103); after forming a mask on at least one of an insulating film portion which includes part of an insulating film of said insulating material formed in and on said at least one groove (103) and another part of said insulating film which corresponds to a prospective field region, etching said insulating, film to leave said insulating material in said at least one groove (103) so as to form field regions (106) in and out of said at least one groove (103).
Claim 13
Dependent Claim
76 words
A method according to claim 10, wherein after said at least one groove (103) is formed in said semiconductor substrate (101), after or before impurity is ion-implanted and before said insulating material is deposited, an oxide film or a nitride film which does not block said at least one groove (103) is grown by oxidizing or nitrifying an entire surface of said semiconductor substrate (101) or at least part of said at least one groove (103).
Claim 14
Dependent Claim
58 words
A method according to claim 10, wherein after said insulating film is deposited, a low-melting point material is doped on an entire surface layer or part of a surface layer of said insulating film and is annealed to melt a doped layer of said insulating film, and said insulating film is etched after a mask is formed thereon.
Claim 15
Dependent Claim
52 words
A method according to claim 10, wherein after said insulating material is deposited, a low-melting point insulating film is deposited on an entire surface layer or part of said insulating film and is melted, and said low-melting point insulating film and said insulating film are etched after a mask is formed thereon.
Claim 16
Dependent Claim
71 words
A method according to claim 10, wherein said impurity whose conductivity type is the same as the conductivity type of said semiconductor substrate (101) is doped in at least one part of said at least one groove (103), and said impurity whose conductivity type is opposite to the conductivity type of said semicon- .ductor substrate (101) is doped in at least the other part of said at least one groove (103).
Claim 17
Dependent Claim
53 words
A method according to claim 14, wherein immediately after said impurity whose conductivity type is opposite to the conductivity type of said semiconductor substrate is doped in said at least one groove (103), said impurity whose conductivity type is the same as the conductivity type of said semiconductor substrate (101) is doped therein.
Claim 18
Dependent Claim
118 words
A method according to claim 10, wherein one part of said at least one groove (103) is shallower than a diffusion depth of said impurity region (104, 104') formed in said semiconductor substrate (101), and the other part of said at least one groove (103) is deeper than the diffusion depth of said impurity region (104, 104'), whereby a wiring layer which has a conductivity type opposite to the conductivity type of said semiconductor substrate (101) and which is formed under said one part of said at least one groove (103) is electrically connected to a region of said impurity region (104, 104'), which has the same conductivity type as the conductivity type of said semiconductor substrate (101).
Claim 19
Independent Claim
280 words
A method for manufacturing a semiconductor device, comprising the steps of: forming at least two adjacent first grooves (103) which respectively have vertical or substantially vertical walls in desired portions of a semiconductor .substrate (101); selectively doping an impurity, whose conductivity type is the same as that of said semiconductor substrate (101) at a dose of not less than 1 x 10 14 cm -2 or an impurity, whose conductivity type is opposite to said semiconductor substrate (101, 301), in at least one of said first grooves (103, 303) to form an impurity region (104, 104') ; depositing an insulating material to cover an entire surface of said semiconductor substrate (101, 301) including said first grooves to a thickness greater than half of a short width of a shorter side of an opening of said first grooves (103, 303); etching an insulating film of said insulating material to leave said insulating material in said first grooves (103, 303); forming a second groove (309) by selectively etching said semiconductor substrate (101, 301), between said first grooves (103, 303) which have said insulating material therein; depositing another insulating material to cover the entire surface of said semiconductor substrate (101, 301) to a thickness greater than half a width of a shorter side of an opening of said second groove (309); etching another insulating film of said another insulating material to expose the surface of said semiconductor substrate (101, 301) and to leave said another insulating material in said second groove (309), whereby said insulating material left in said first grooves (103, 303) becomes integral with said another insulating material left in said second groove (309) to form a wide field region (311).
Claim 20
Independent Claim
280 words
A method for manufacturing a semiconductor device, comprising the steps of: forming at least two adjacent first grooves (103) which respectively have vertical or substantially vertical walls in desired portions of a semiconductor .substrate (101); selectively doping an impurity, whose conductivity type is the same as that of said semiconductor substrate (101) at a dose of not less than 1 x 10 14 cm -2 or an impurity, whose conductivity type is opposite to said semiconductor substrate (101, 301), in at least one of said first grooves (103, 303) to form an impurity region (104, 104') ; depositing an insulating material to cover an entire surface of said semiconductor substrate (101, 301) including said first grooves to a thickness greater than half of a short width of a shorter side of an opening of said first grooves (103, 303); etching an insulating film of said insulating material to leave said insulating material in said first grooves (103, 303); forming a second groove (309) by selectively etching said semiconductor substrate (101, 301), between said first grooves (103, 303) which have said insulating material therein; depositing another insulating material to cover the entire surface of said semiconductor substrate (101, 301) to a thickness greater than half a width of a shorter side of an opening of said second groove (309); etching another insulating film of said another insulating material to expose the surface of said semiconductor substrate (101, 301) and to leave said another insulating material in said second groove (309), whereby said insulating material left in said first grooves (103, 303) becomes integral with said another insulating material left in said second groove (309) to form a wide field region (311).
Claim 21
Dependent Claim
19 words
A method according to claim 17, wherein said impurity is doped immediately after said second groove (309) is formed.
Claim 22
Dependent Claim
32 words
A method according to claim 17, wherein said impurity is doped after said first grooves (303) are formed, and said impurity is also doped immediately after said second groove (309) is formed.
Claim 23
Dependent Claim
61 words
A method according to claim 17, wherein after one of said first grooves (303) and said second groove (309) are formed, an oxide film or a nitride film which does not block said first and second grooves is formed by oxidizing or nitrifying the entire surface of said semiconductor substrate or at least part of said first and second grooves (309).
Claim 24
Dependent Claim
70 words
A method according to claim 20, wherein before said impurity which has a conductivity type opposite to the conductivity type of said semiconductor substrate (301) is ion-implanted, an oxide film or a nitride film which does not block at least one of said first and second grooves is grown by oxidizing or nitrifying the entire surface of said semiconductor substrate or at least part of said first and second grooves.
Claim 25
Dependent Claim
75 words
A method according to claim 17, wherein after said insulating film is deposited on said semtconductor substrate (301) which has at least said first grooves (303), or said insulating film is deposited on said semiconductor substrate which has said second groove (309), a low-melting point material is doped on an entire surface layer or part of a surface layer of said insulating film and is melted to form a doped layer of said insulating film.
Claim 26
Dependent Claim
64 words
A method according to claim 17, wherein after said insulating material is deposited on said semiconductor substrate which has at least said first grooves (303), or said insulating film is deposited on said semiconductor substrate which has said second groove (309), a low-melting point insulating film is deposited on an entire suface or part of a surface of said insulating film and is melted.
Claim 27
Dependent Claim
69 words
A method according to claim 17, wherein said impurity whose conductivity type is the same as the conductivity type of said semiconductor substrate is doped in at least one part of said first and second grooves (303, 309), and said impurity whose conductivity type is opposite to the couductivity type of said semiconductor substrate (301) is doped in at least the other part of said first and second grooves.
Claim 28
Dependent Claim
45 words
A method according to claim 24, wherein immediately after said impurity whose conductivity type is opposite to the conductivity type of said semiconductor substrate (301) is doped, said impurity whose conductivity type is the same as the conductivity type of said semiconductor substrate is doped.
Claim 29
Dependent Claim
52 words
A method according to claim 21 or 24, wherein said impurity which is the same conductivity type as the conductivity type of said semiconductor substrate (303) is doped before or after said first and second grooves (303, 309) are oxidised or nitrified so as not to block said first and second groove.
Claim 30
Dependent Claim
110 words
A method according to claim 17, wherein one part of said first and second groove: (303, 3C9) is shallower than a diffusion depth of an impurity region (304) formed in said semiconductor substrate (301), and the other part of said first and second grooves is deeper than the diffusion depth of said impurity region, whereby said wiring layer which has a conductivity type opposite to the conductivity type of said semiconductor substrate and which is formed under said one part of said first and second grooves is electrically connected to a region of said impurity region, which has the same conductivity type as the conductivity type of said semiconductor substrate.
Claim 31
Independent Claim
235 words
A method for manufacturing a semiconductor device, comprising the steps of: forming first grooves (203 . - 203 5 ) which respectively have vertical or substantially vertical walls in desired portions of a semiconductor substrate (201); doping an impurity, whose.conductivity type is the same as that of said semiconductor substrate (201) at a dose of not less than 1 x 10 14 cm -2 or an impurity, whose conductivity type is opposite to said semiconductor substrate (201), in at least one of said first grooves to form an impurity region; depositing an insulating material to cover an entire surface of said semiconductor substrate (201) including said first grooves to a thickness greater than half a width of a shorter side of an opening of said first grooves; etching an insulating film of said insulating material to expose the surface of said semiconductor substrate (201) and to leave said insulating material in said first grooves; depositing an antioxidant film (206) on the surface of said semiconductor substrate (201) on which said insulating film is left; forming a second groove (207 1 ~ 207 3 ), by selectively etching part of a surface of said antioxidant film (206) between said first grooves; and performing field oxidation using said antioxidant film as a mask to form an oxide film between said first grooves, said oxide film being formed integrally with said insulating film left in said first grooves.
Claim 32
Independent Claim
235 words
A method for manufacturing a semiconductor device, comprising the steps of: forming first grooves (203 . - 203 5 ) which respectively have vertical or substantially vertical walls in desired portions of a semiconductor substrate (201); doping an impurity, whose.conductivity type is the same as that of said semiconductor substrate (201) at a dose of not less than 1 x 10 14 cm -2 or an impurity, whose conductivity type is opposite to said semiconductor substrate (201), in at least one of said first grooves to form an impurity region; depositing an insulating material to cover an entire surface of said semiconductor substrate (201) including said first grooves to a thickness greater than half a width of a shorter side of an opening of said first grooves; etching an insulating film of said insulating material to expose the surface of said semiconductor substrate (201) and to leave said insulating material in said first grooves; depositing an antioxidant film (206) on the surface of said semiconductor substrate (201) on which said insulating film is left; forming a second groove (207 1 ~ 207 3 ), by selectively etching part of a surface of said antioxidant film (206) between said first grooves; and performing field oxidation using said antioxidant film as a mask to form an oxide film between said first grooves, said oxide film being formed integrally with said insulating film left in said first grooves.
Claim 33
Dependent Claim
24 words
A method according to claim 28, wherein said impurity is doped immediately after said second groove (207, 1 ~ 207 3 ) is formed.
Claim 34
Dependent Claim
40 words
A method according to claim 28, wherein said impurity is doped after said first grooves (203, - 203 5 ) are formed, and said impurity is also doped after said second groove (207 1 ~ 207 3 ) is formed.
Claim 35
Dependent Claim
85 words
A method according to claim 28, wherein after said antioxidant film is deposited on the surface of said semiconductor substrate, part of said antioxidant film, and said semiconductor substrate (201) between said first grooves (203 2 ~ 203 5 ) are etched to form said second groove (207 1 - 207 3 ) which has said insulating film left in said first grooves on at least part of a side surface thereof, and said field oxidation is performed using said antioxidant film as a mask.
Claim 36
Dependent Claim
65 words
A method according to claim 28, wherein after said first grooves (203 1 - 203 5 ) are formed in said semiconductor substrate, or after said impurity is doped, an oxide film or a nitride film which does not block said first grooves is formed by oxidizing or nitrifying the entire surface of said semiconductor substrate (201) or at least part of said first grooves.
Claim 37
Dependent Claim
62 words
A method according to claim 28, wherein after said insulating film is deposited on said semiconductor substrate (201) which has said first grooves (203 1 ~ 2035), a low-melting point insulating film is deposited on an entire surface or part of a surface of said insulating film and is melted, and said insulating film and said low-melting point insulating film are etched.
Claim 38
Dependent Claim
95 words
A method according to claim 28, wherein after said second groove (207 1 ~ 207 3 ) which has said insulating film (205') left in said first grooves (203 2 ~ 205) on side surfaces of said second groove is formed by selectively etching part of said semiconductor substrate (201) between said first grooves in which said insulating film (205') is left, an antioxidant film (206) is deposited to cover the entire surface of said semiconductor substrate (201) and is etched, and said field oxidation is performed using said antioxidant film (206) as a mask.
Claim 39
Dependent Claim
34 words
A method according to claim 28, wherein after said field oxidation is performed, part of a field oxide film is etched using said antioxidant film (206) as a mask to obtain a flat structure.
Claim 40
Dependent Claim
68 words
A method according to claim 28, wherein said impurity whose conductivity type is the same as the conductivity type of said semiconductor substrate (201) is doped in at least one part of said first and second grooves, and said impurity whose conductivity type is opposite to the conductivity type of said semiconductor substrate (201) is doped in at least the other part of said first and second grooves.
Claim 41
Dependent Claim
45 words
A method according to claim 36, wherein immediately after said impurity whose conductivity type is opposite to the conductivity type of said semiconductor substrate is doped, said impurity whose conductivity type is the same as the conductivity type of said semiconductor substrate (201) is doped.
Claim 42
Dependent Claim
49 words
'A'method according to claim 3i or 36, wherein before or after said first and second grooves are oxidized or nitrified so as not to block said first and second grooves, said impurity whose conductivity type is the same as the coductivity type of said semiconductor substrate (201) is doped.
Claim 43
Dependent Claim
120 words
A method according to claim 28, wherein one part of said first and second grooves (203 1 ~ 203 5 , 207 1 ~ 207 3 ) is shallower than a diffusion depth of an impurity region formed in said semiconductor substrate, and the other part of said first and second grooves is deeper than the diffusion depth of said impurity region, whereby said wiring layer which has a conductivity type opposite to the conductivity type of said semiconductor substrate (201) and which is formed under said one part of said first and second grooves is electrically connected to a region of said impurity region, which has the same conductivity type as the conductivity type of said semiconductor substrate (201).
Claim 44
Dependent Claim
49 words
A semiconductor device including an impurity region (104', 204', 304') which has the same conductivity type as a conductivity type of a semiconductor substrate (101, 201, 301) and has a sheet resistance ps = 50 ohms/□ under a field region (106, 205', 208', 305) buried in said semiconductor substrate.
Claim 45
Dependent Claim
49 words
A semiconductor device including an impurity region (104', 204', 304') which has the same conductivity type as a conductivity type of a semiconductor substrate (101, 201, 301) and has a sheet resistance ps = 50 ohms/□ under a field region (106, 205', 208', 305) buried in said semiconductor substrate.
References Cited (Backward Citations)
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