EP0091775A2
Expired / Lapsed
EP
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A method of manufacturing a semiconductor device comprising an interconnection layer
Assignee: Toshiba Corp
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Filing: 1983-04-06
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Granted: —
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Expires: 2003-04-06
Abstract
Abstract A method of manufacturing a semiconductor device which comprises the steps of forming an interconnection layer (409) through an insulating film (402) on a semiconductor substrate (401), and connecting the diffusion interconnection region (408c) in the surface portion of said substrate (401) to said interconnection layer (409) by growing a metal or metal semiconductor compound (414) on the surface of said substrate (401) and the interconnection layer (409).
Inventors
- 👤 Tadashi Shibata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-24 22:39
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/20; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10W20/0698; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; Y; Y10; Y10S; Y10S438/00; Y10S438/98
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
69 words
A method of manufacturing a semiconductor device comprising the steps of forming an interconnection layer through an insulating film on a semiconductor substrate, and connecting the diffusion interconnection region in the surface portion of said substrate to said interconnection layer, characterized in that said connecting step is performed by growing a metal or metal semiconductor compound (414) on the surface of said substrate (401) and the interconnection layer (409).
Claim 2
Independent Claim
69 words
A method of manufacturing a semiconductor device comprising the steps of forming an interconnection layer through an insulating film on a semiconductor substrate, and connecting the diffusion interconnection region in the surface portion of said substrate to said interconnection layer, characterized in that said connecting step is performed by growing a metal or metal semiconductor compound (414) on the surface of said substrate (401) and the interconnection layer (409).
Claim 3
Dependent Claim
31 words
The method according to claim 1, characterized in that said interconnection layer (409) is formed of an impurity-doped poly-silicon- or a two-layer structure of an impurity-doped poly-silicon and a metal silicide.
Claim 4
Dependent Claim
26 words
The method according to claim 1, characterized in that said interconnection layer (409) is formed by patterning the poly-silicon layer together with a gate electrode (410).
Claim 5
Dependent Claim
31 words
The method according to claim 1, characterized in that said diffusion interconnection region (408c) is an extension of at least one of a source region (408a) and a drain region (408b).
Claim 6
Dependent Claim
66 words
A method according to claim 1, characterized in that said growing step includes the steps of depositing a metal (415) on the entire surface of the structure, forming a metal silicide film (414) on the surfaces of the semiconductor substrate and the interconnection layer by reacting the semiconductor substrate and the interconnection layer with the metal which is in contact with them, and eliminating unreacted metal.
Claim 7
Dependent Claim
37 words
A method according to claim 5, characterized in that the reaction between the metal and silicon is performed by a method selected from the group consisting of thermal annealing, laser beam irradiation, electron beam irradiation and ion-implantation.
Claim 8
Dependent Claim
36 words
A method according to claim 5, characterized in that the reaction between the metal and silicon is performed by ion-implanting an impurity which has a conductivity type opposite to the conductivity type of said semiconductor substrate.
Claim 9
Dependent Claim
30 words
A method according to claim 5, characterized in that the metal is a member selected from the group consisting of W, Pd, Pt, Ni, Mo, Nb, Ta, Ir and Ti.
Claim 10
Dependent Claim
68 words
A method according to claim 1, characterized in that said growing step includes the steps of heating said semiconductor substrate (401) at a temperature above 200°C, surrounding said semiconductor substrate (401) with a metal halide gas or a mixture of a metal halide gas and a reducing gas, and depositing a metal film (800) on the exposed surfaces of said semiconductor substrate (401) and said interconnection layer (409).
Claim 11
Dependent Claim
28 words
A method according to claim 9, characterized in the metal is a member selected from the group consisting of W, Pd, Pt, Ni, Mo, Nb, Ta and Ti.
References Cited (Backward Citations)
No citation records indexed.
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