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EP0091256A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

CMOS device

Assignee: Fujitsu Ltd
•
Filing: 1983-03-28
•
Granted: —
•
Expires: 2003-03-28
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Abstract

Abstract In a semiconductor device comprising: a semiconductor body having a first conductivity type; a first impurity region being formed in the semiconductor body and having said first conductivity type, the first impurity region having higher impurity concentration than the semiconductor body; a first transistor formed in the first impurity region; a second Impurity region being formed in the semiconductor body and having a second conductivity type opposite to the first conductivity type; a second transistor formed in the second impurity region; according to the present invention, a third transistor is formed in the semiconductor body having lower impurity than the first impurity region.

Inventors

  • 👤 Touru Inaba

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-28 22:33
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0188; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/858; H10P30/21; H10P30/212

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 100 words
A semiconductor device comprising: a semiconductor body having a first conductivity type; a first impurity region being formed in said semiconductor body and having said first conductivity type,-said first impurity region having higher impurity concentration than said semiconductor body; a first transistor formed in said first impurity region; a second impurity region being formed in said semiconductor body and having a second conductivity type opposite to said first conductivity type; and a second transistor formed in said second impurity region characterized in that a third transistor is formed in said semiconductor body having lower impurity than said first impurity region.
Claim 2
Dependent Claim 100 words
A semiconductor device comprising: a semiconductor body having a first conductivity type; a first impurity region being formed in said semiconductor body and having said first conductivity type,-said first impurity region having higher impurity concentration than said semiconductor body; a first transistor formed in said first impurity region; a second impurity region being formed in said semiconductor body and having a second conductivity type opposite to said first conductivity type; and a second transistor formed in said second impurity region characterized in that a third transistor is formed in said semiconductor body having lower impurity than said first impurity region.
Claim 3
Dependent Claim 29 words
A semiconductor device according to claim 1 characterized in that said first and third transistor are p channel MOS transistor and said second transistor is n channel MOS transistor.

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