EP0088922A2
Expired / Lapsed
EP
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A method of forming electrodes and wiring strips on a semiconductor device
Assignee: Toshiba Corp
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Filing: 1983-02-25
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Granted: —
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Expires: 2003-02-25
Abstract
Abstract A method of manufacturing a semiconductor device comprises the steps of: forming a thin film (15) on a semiconductor body (1) on which a protruding pattern (11) is formed; selectively leaving the thin film (15) to form a thin film pattern (15') surrounding at least a portion the protruding pattern (11); and etching at least an exposed portion of the protruding pattern (11), whereby said thin film pattern (15') becomes fence-shaped.
Inventors
- 👤 Yoshitaka Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 18:59
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/015; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D62/00; H10D62/80; H10D62/83; H10D64/021; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; H10D64/60; H10D64/62; H10P; H10P76/00; H10P76/40; H10P76/408; H10P76/4088; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; H10D64/017
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
79 words
A method of manufacturing a semiconductor device, characterized by the steps of: forming a thin film (15, 34) on a semiconductor body (1) on which a protruding pattern (11, 28, 32) is formed;. selectively leaving the thin film (15, 34) to form a thin film pattern (15', 34') surrounding at least a portion the protruding pattern (11, 28, 32); and etching at least an exposed portion of the protruding pattern, whereby said thin film pattern (15', 34') becomes fence-shaped.
Claim 2
Independent Claim
79 words
A method of manufacturing a semiconductor device, characterized by the steps of: forming a thin film (15, 34) on a semiconductor body (1) on which a protruding pattern (11, 28, 32) is formed;. selectively leaving the thin film (15, 34) to form a thin film pattern (15', 34') surrounding at least a portion the protruding pattern (11, 28, 32); and etching at least an exposed portion of the protruding pattern, whereby said thin film pattern (15', 34') becomes fence-shaped.
Claim 3
Dependent Claim
27 words
A method according to claim 1, characterized in that the protruding pattern comprises a two-layer structure consisting of a semiconductor pattern and an insulation pattern laminated thereover.
Claim 4
Dependent Claim
30 words
A method according to claim 1, characterized in that the protruding pattern (11) comprises a two-layer structure consisting of a conductor pattern (9) and an insulation pattern (10) laminated thereover.
Claim 5
Dependent Claim
19 words
A method according to claim 3, characterized in that the conductor pattern (9) consists of an impurity-doped polycrystalline silicon.
Claim 6
Dependent Claim
18 words
A method according to claim 3, characterized in that the conductor pattern consists of an impurity-doped amorphous silicon.
Claim 7
Dependent Claim
17 words
A method according to claim 3, characterized in that the conductor pattern consists of a refractory metal.
Claim 8
Dependent Claim
17 words
A method according to claim 3, characterized in that the conductor pattern consists of a metal silicide.
Claim 9
Dependent Claim
15 words
A method according to claim 3, characterized in that the conductor pattern consists of aluminum.
Claim 10
Dependent Claim
17 words
A method according to claim 3, characterized in that the conductor pattern consists of an aluminum alloy.
Claim 11
Dependent Claim
39 words
A method according to claim 3, characterized in that the conductor pattern comprises an impurity-doped polycrystalline silicon film which is formed using a polycrystalline silicon film as a starting material, and doping the polycrystalline silicon film with an impurity.
Claim 12
Dependent Claim
40 words
A method according to claim 3, characterized in . that the conductor pattern comprises a metal silicide film which is formed using a polycrystalline silicon film as a starting material, and converting the polycrystalline silicon film into a metal silicide.
Claim 13
Dependent Claim
39 words
A method according to claim 3, characterized in that the conductor pattern comprises an impurity-doped amorphous silicon film which is formed using an amorphous silicon film as a starting material, and doping the amorphous silicon film with an impurity.
Claim 14
Dependent Claim
40 words
A method according to claim 3, characterized in that the conductor pattern comprises a metal silicide film which is formed by using an amorphous silicon film as a starting material and converting the amorphous silicon film into a metal silicide.
Claim 15
Dependent Claim
26 words
A method according to claim 2 or 3, characterized in that the insulation film (10) is formed using an epitaxial PSG film as a starting material.
Claim 16
Dependent Claim
26 words
A method according to claim 2 or 3, characterized in that the insulation pattern is formed using an epitaxial silicon nitride film as a starting material.
Claim 17
Dependent Claim
31 words
A method according to claim 1, characterized in that the protruding pattern (28) comprises a two-layer structure consisting of a silicon nitride pattern (27) and a PSG pattern (10) laminated thereover.
Claim 18
Dependent Claim
19 words
A method according to claim 1, characterized in that the protruding pattern comprises only an Si0 2 pattern (32).
Claim 19
Dependent Claim
19 words
A method according to claim 1, characterized in that the protruding pattern is formed directly on the semiconductor body.
Claim 20
Dependent Claim
26 words
A method according to claim 1, characterized in that the protruding pattern (11, 28) is formed on the semiconductor body (1) through an insulation pattern (8).
Claim 21
Dependent Claim
34 words
A method according to claim 1, characterized in that the thin film (15) is formed though an insulation film (12) on said semiconductor body (1) on which the protruding pattern (11, 28) is formed.
Claim 22
Dependent Claim
35 words
A method according to claim 1, characterized in that the step of selectively etching the thin film (15, 34) comprises anisotropically etching the thin film (15, 34) for a distance corresponding to a thickness thereof.
Claim 23
Dependent Claim
21 words
A method according to claim 1, 20 or 21, characterized in that the thin film (15, 34) consists of polycrystalline silicon.
Claim 24
Dependent Claim
19 words
A method according to claim 1, 20 or 21, characterized in that the thin film consists of amorphous silicon.
Claim 25
Dependent Claim
19 words
A method according to claim 1, 20 or 21, characterized in that the thin film consists of silicon nitride.
Claim 26
Dependent Claim
20 words
A method according to claim 1, 20 or 21, characterized in that the thin film consists of a polyimide resin.
Claim 27
Dependent Claim
45 words
A method according to claim 1, characterized in that an electrode (21, 22, 30) is formed by forming an electrode material film (17) over the fence-shaped thin film pattern (15'), and removing the fence-shaped thin film pattern (15') to isolate the electrode material film (17).
Claim 28
Dependent Claim
38 words
A method according to claim 1, characterized in that wiring strips are formed by forming a wiring material film over the fence-shaped thin film pattern, and removing the fence-shaped thin film pattern to isolate the wiring material film.
Claim 29
Dependent Claim
241 words
A method according to claim 1, characterized in that the method comprises the steps of: selectively forming through an insulation pattern (8) the protruding pattern (11) on a semiconductor substrate (1) of a first conductivity type as the semiconductor body, the protruding pattern (11) consisting of a conductor pattern (9) and another insulation pattern (10); forming impurity regions (13 1 , 14 1 ) of a second conductivity type in the semiconductor substrate (1) by introducing an impurity of the second conductivity type into the substrate (1) using the protruding pattern (11) as a mask; sequentially forming an insulation film (12) and the thin film (15) on an entire surface; selectively leaving the thin film pattern (15') on a portion of the insulation film (12) surrounding the protruding pattern (11) by anisotropically etching the thin film (15); forming openings (16) on at least the impurity regions (131, 14 1 ) by selectively etching the insulation film (12) using the thin film pattern (15') as a mask; etching at least a portion of the insulation pattern (10) of the protruding pattern (11), whereby said thin film pattern (15') becomes fence-shaped; depositing an electrode material film (17) on the entire surface; and forming electrodes (21, 22) which are connected at least to the impurity regions (13 1 , 14 1 ) through the openings (16) by etching or mechanically removing the fence-shaped thin film pattern (15') and isolating the electrode material film (17).
Claim 30
Dependent Claim
46 words
A method according to claim 28, characterized in that the conductor pattern of said protruding pattern (11) is a gate electrode, one (13 1 ) of the impurity regions of the second conductivity type is a source, and the other (14 1 ) is a drain.
References Cited (Backward Citations)
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