Patent US1959794A successfully refreshed from Google Patents.
EP0087264A2
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Force sensors
Assignee: The General Electric Company PLC
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Filing: 1983-02-16
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Granted: —
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Expires: 2003-02-16
Abstract
Abstract A force sensor comprising a field effect transistor structure (1, 3, 5, 9, 17) with a layer of piezoelectric material (11) between the channel region (9) and the gate electrode (17).
Inventors
- 👤 Eileen Read
- 👤 Daniel Vincent Mccaughan
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 13:18
CPC Classifications
B; B06; B06B; B06B1/00; B06B1/02; B06B1/06; B06B1/0644; G; G01; G01L; G01L1/00; G01L1/18; H; H10; H10D; H10D48/00; H10D48/50
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
99 words
A force sensor characterised in that it comprises: a field effect transistor structure comprising a semiconductor substrate (1, Fig. 1; 21, Figs 2, 3) including a source region (5, Fig. 1; 25, Figs 2, 3), a drain region (7, Fig. 1; 27 Figs 2, 3) and a channel region (9, Fig.1; 29 Figs 2, 3) between the source and drain regions; a layer of piezoelectric material (11, Fig.1; 31,Figs 2,3) at least a portion of which overlies said channel region; and a control electrode (17, Fig. 1; 35, Figs 2, 3) overlying said portion of the piezoelectric material layer.
Claim 2
Dependent Claim
99 words
A force sensor characterised in that it comprises: a field effect transistor structure comprising a semiconductor substrate (1, Fig. 1; 21, Figs 2, 3) including a source region (5, Fig. 1; 25, Figs 2, 3), a drain region (7, Fig. 1; 27 Figs 2, 3) and a channel region (9, Fig.1; 29 Figs 2, 3) between the source and drain regions; a layer of piezoelectric material (11, Fig.1; 31,Figs 2,3) at least a portion of which overlies said channel region; and a control electrode (17, Fig. 1; 35, Figs 2, 3) overlying said portion of the piezoelectric material layer.
Claim 3
Dependent Claim
24 words
A sensor according to Claim 1 wherein said piezoelectric layer overlies a layer of insulating material (3, Fig. 1) which overlies said channel region.
Claim 4
Dependent Claim
20 words
A sensor according to Claim 2 wherein the region of the substrate beneath the channel region is of reduced thickness.
Claim 5
Dependent Claim
52 words
A sensor according to Claim 1 wherein said piezoelectric layer overlies a layer of insulating material (23, Figs 2, 3) which overlies the substrate adjacent to said channel region, and a portion (31a, Figs 2, 3) of said piezoelectric layer extends beyond said insulating layer so as to overhang said channel region.
Claim 6
Dependent Claim
17 words
A sensor according to Claim 4 wherein said portion of said piezoelectric layer is of rectangular form.
Claim 7
Dependent Claim
29 words
A sensor according to any preceding claim associated with electric circuit means for processing the output signal of the sensor and formed in the same substrate as the sensor.
References Cited (Backward Citations)
No citation records indexed.
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