EP0086915A2
Expired / Lapsed
EP
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Semiconductor device having conductor lines connecting the elements
Assignee: Fujitsu Ltd
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Filing: 1982-11-17
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Granted: —
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Expires: 2002-11-17
Abstract
Abstract In a semiconductor device of an integrated circuit having a groove isolation structure (10), an electrostatic separating structure (21) similar to the groove isolation structure is formed under the conductor lines (5) connecting the ele - ments and in a portion of the semiconductor body (7) other than that necessary for the elements. The electrostatic separating structure (21) comprises a V-shaped or U-shaped insulating layer (22), a filled-in nonconductive material (e.g. polycrystalline silicon) (23), and a relatively thick insulating layer (24), so that the stray capacity of the conductor lines (5) can be reduced.
Inventors
- 👤 Masayoshi Kimoto
- 👤 Yasuhiko Mafune
- 👤 Yasuhisa Sugo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 00:47
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/495; H10W10/00; H10W10/01; H10W10/041; H10W10/40
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
64 words
A semiconductor device having elements (4) formed in a semiconductor body (7) and conductor lines (5, 30) connecting the elements, characterized in that the semiconductor device is provided with an electrostatic separating structure (21,31, 35) which comprises a filler (22, 23; 32, 33; 36, 37) within a groove formed under the conductor lines (5, 30) and in a portion of the semiconductor body (7).
Claim 2
Dependent Claim
64 words
A semiconductor device having elements (4) formed in a semiconductor body (7) and conductor lines (5, 30) connecting the elements, characterized in that the semiconductor device is provided with an electrostatic separating structure (21,31, 35) which comprises a filler (22, 23; 32, 33; 36, 37) within a groove formed under the conductor lines (5, 30) and in a portion of the semiconductor body (7).
Claim 3
Dependent Claim
71 words
A semiconductor device having a plurality of elements (4) formed in a semiconductor body (7) interconnected by conductor lines (5, 30), each element (4) or group of elements being surrounded by a groove isolation structure (10), characterized in that an electrostatic separating structure (21, 31, 35) is provided, the structure comprising an insulating filler within a groove formed along and under each conductor (5, 30) and in the semiconductor body (7).
Claim 4
Dependent Claim
71 words
A semiconductor device having a plurality of elements (4) formed in a semiconductor body (7) interconnected by conductor lines (5, 30), each element (4) or group of elements being surrounded by a groove isolation structure (10), characterized in that an electrostatic separating structure (21, 31, 35) is provided, the structure comprising an insulating filler within a groove formed along and under each conductor (5, 30) and in the semiconductor body (7).
Claim 5
Dependent Claim
42 words
A semiconductor device according to claim 1 or claim 2, characterized in that the semiconductor body (7) comprises a semiconductor substrate (8) and an epitaxial layer (9) grown on the substrate C8),and in that the grooves extend into the epitaxial layer (9).
Claim 6
Dependent Claim
23 words
A semiconductor device according to claim 2, characterized in that the grooves extend into the semiconductor substrate (8) through the epitaxial layer (9).
Claim 7
Dependent Claim
21 words
A semiconductor device accord to any of the preceding claims, characterized in that the groove is a V-groove or a U-groove.
Claim 8
Dependent Claim
36 words
A semiconductor device according to any of the preceding claims, characterized in that the filler comprises an insulating layer (22, 32, 36) formed on the surface of the groove, and a nonconductive material filling the groove.
Claim 9
Dependent Claim
46 words
A semiconductor device according to claim 6, characterized in that the insulating layer (22, 32, 36) is silicon dioxide and in that the nonconductive material comprises a polycrystalline silicon portion (23, 33,.37) and a silicon dioxide layer (24, 34, 38) formed on the polycrystalline silicon portion.
Claim 10
Independent Claim
57 words
A method of manufacturing a semiconductor device, the method comprising forming groove isolation structures (10) in a semiconductor body (7); forming an electrostatic separating structure (21, 31, 35) in the semiconductor body (7) in accordance with a desired conductor line pattern; and forming semiconductor elements (4) in and conductor lines (5, 30) on the semiconductor body (7).
Claim 11
Independent Claim
57 words
A method of manufacturing a semiconductor device, the method comprising forming groove isolation structures (10) in a semiconductor body (7); forming an electrostatic separating structure (21, 31, 35) in the semiconductor body (7) in accordance with a desired conductor line pattern; and forming semiconductor elements (4) in and conductor lines (5, 30) on the semiconductor body (7).
Claim 12
Dependent Claim
26 words
A method according to claim 8, wherein the groove isolation structures (10) and the electrostatic separating structure (21, 31, 35) are formed at the same time.
Claim 13
Dependent Claim
33 words
A method according to claim 8 or claim 9, wherein grooves of the groove isolation structures (10) and the electrostatic separating structure (21, 31, 35) are formed by etching the semiconductor body (7).
References Cited (Backward Citations)
No citation records indexed.
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