EP0084265A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of producing a semiconductor device comprising a plurality of recrystallized monocrystal regions
Assignee: Fujitsu Ltd
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Filing: 1982-12-24
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Granted: —
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Expires: 2002-12-24
Abstract
Abstract A method for producing a semiconductor device comprising the steps of: forming an insulating layer on a substrate, said insulating layer having a plurality of concave portions respectively including a concave; forming a non-single crystalline silicon layer on a surface of said insulating layer; patterning said non-single crystalline silicon layer so that each concave portion is independently melting and flowing said patterned non-single crystalline silicon layer into said concave to form a single crystalline region in said concave by an irradiation with an energy ray; and forming a semiconductor element in said single crystalline region.
Inventors
- 👤 Tsutomu Ogawa
- 👤 Hajime Kamioka
- 👤 Seiichiro Kawamura
- 👤 Junji Sakurai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 12:59
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/32; H10P14/3202; H10P14/3238; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3818; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1912
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
102 words
A method for producing a semiconductor device comprising the steps of: forming an insulating layer on a substrate, said insulating having a plurality of concave portions respectively including a concave; forming a non--single crystalline silicon layer on a surface of said insulating layer; patterning said non-single crystalline silicon layer so that each concave portion is independently covered with said patterned non-single crystalline silicon layer; melting and flowing said patterned non-single crystalline silicon layer into said concave to form a single crystalline region in said concave by an irradiation with an energy ray; and forming a semiconductor element in said single crystalline region.
Claim 2
Independent Claim
102 words
A method for producing a semiconductor device comprising the steps of: forming an insulating layer on a substrate, said insulating having a plurality of concave portions respectively including a concave; forming a non--single crystalline silicon layer on a surface of said insulating layer; patterning said non-single crystalline silicon layer so that each concave portion is independently covered with said patterned non-single crystalline silicon layer; melting and flowing said patterned non-single crystalline silicon layer into said concave to form a single crystalline region in said concave by an irradiation with an energy ray; and forming a semiconductor element in said single crystalline region.
Claim 3
Dependent Claim
35 words
A method according to claim 1, wherein before the irradiation with said energy ray, impurities are introduced into said non-single crystalline layer and P type and N type regions are simultaneously formed by the irradiation.
Claim 4
Dependent Claim
51 words
A method according to any one of claim 2, wherein after introducing said impurities, the a mask layer for preventing diffusion of said impurities is formed on said non-single crystalline layer, a cap layer is formed on said mask layer, and said energy ray is irradiated from above said cap layer.
Claim 5
Independent Claim
30 words
A method according to any one of claims 1 to 3, wherein said non-single crystalline layer is a member selected from the group consisting of polycrystalline silicon and amorphous silicon.
Claim 6
Independent Claim
31 words
A method according to any one of claims 1 to 4, wherein said energy ray is a member selected from the group consisting of laser beam, electron beam, and ion beam.
References Cited (Backward Citations)
No citation records indexed.
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