EP0084177A2
Expired / Lapsed
EP
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A semiconductor device having a back-gate bias generator
Assignee: Toshiba Corp
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Filing: 1982-12-29
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Granted: —
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Expires: 2002-12-29
Abstract
Abstract A semiconductor device includes a p-type semiconductor region (24) and a back-gate bias generator which has an oscillating circuit (42) and charge pump circuit (36, 38, 40) formed in the p-type semiconductor region (24) to apply a back-gate bias voltage to the p-type semiconductor region (24) in accordance with an output signal from the oscillating circuit. The p-type semiconductor region (24) is an isolated region formed in the surface area of an n-type semiconductor substrate (20).
Inventors
- 👤 Hiroshi Nozawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 19:33
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/211; H10D89/213; H10D89/215; G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/205
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
85 words
A semiconductor device comprising a semiconductor region (24) of one conductivity type and a back-gate bias generating circuit for applying a back-gate bias voltage to said semiconductor region (24) and including an oscillating circuit section (42) and a charge pump circuit section (36, 38 and 40), at least said charge pump circuit being formed within said semiconductor region (24), characterized in that said semiconductor region (24) is an isolated region formed in the surface area of a semiconductor substrate (20) of an opposite conductivity type.
Claim 2
Dependent Claim
85 words
A semiconductor device comprising a semiconductor region (24) of one conductivity type and a back-gate bias generating circuit for applying a back-gate bias voltage to said semiconductor region (24) and including an oscillating circuit section (42) and a charge pump circuit section (36, 38 and 40), at least said charge pump circuit being formed within said semiconductor region (24), characterized in that said semiconductor region (24) is an isolated region formed in the surface area of a semiconductor substrate (20) of an opposite conductivity type.
Claim 3
Dependent Claim
190 words
A semiconductor device according to claim 1, characterized in that said charge pump circuit section comprises: first, second third and fourth impurity regions (25, 26, 27 and 28) formed in the surface area of said isolated region (24); a first electrode layer (30) formed insulatively on a portion of said isolated region which lies (24) between the first and the second impurity regions (25, 26); a second electrode layer (31) formed insulatively on a portion of said island region (24) which lies between the third and the fourth impurity regions (27, 28); a fifth impurity region (32) of the one conductivity type formed in the surface area of said isolated region (24) to electrically connect the second and third impurity regions. (26, 27); and a third electrode layer (34) insulatively formed on the fifth impurity region (32), the first and second impurity regions (25, 26) and the first electrode layer (30) constitute a first MOS transistor, the third and fourth impurity regions (27, 28) and the second electrode layer (31) constitute a second MOS transistor, and the fifth impurity region and the third electrode layer (34) constitute an MOS capacitor.
Claim 4
Dependent Claim
60 words
A semiconductor device according to claim 2, characterized by further comprising a sixth impurity region (29) of the opposite conductivity type which is electrically connected to the fourth impurity region (28) and the second electrode layer (31), and formed in the surface area of said isolated region (24) and having an impurity concentration higher than that of said isolated region.
Claim 5
Dependent Claim
44 words
A semiconductor device according to claim 2, characterized by further comprising a seventh impurity region (22) of the one conductivity type formed in the surface area of the semiconductor substrate (20) and having an impurity concentration higher than that of said semiconductor substrate (20).
Claim 6
Dependent Claim
35 words
A semiconductor device according to claim 2, characterzied by further comprising a conductive layer (44) formed on the surface of said semiconductor substrate (20) opposing the surface in which said isolated region (24) is formed.
Claim 7
Dependent Claim
17 words
A semiconductor device according to claim 1, characterized in that said one conductivity type is the n-type.
References Cited (Backward Citations)
No citation records indexed.
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