EP0083387A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Memory device
Assignee: International Business Machines Corp
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Filing: 1982-06-29
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Granted: —
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Expires: 2002-06-29
Abstract
Abstract A volatile part of the memory device comprises an FET (38) with a source contact (37), and a drain region (34) forming a storage capacitor (30) with a plate (32) of contact (35), the FET having a control gate (12). A non-volatile part comprises a floating gate (14) of the FET which gate is coupled to the region (28) via a dual electron injector structure (18) and region (26). Charge on the floating gate can be adjusted via the gate (12) and contact (37).
Inventors
- 👤 Donelli Joseph Dimaria
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 05:52
CPC Classifications
G; G11; G11C; G11C14/00; H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/682
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
68 words
A memory device having in combination, a) dynamic random access memory structure, comprising a storage capacitor (30), a storage node (34), a floating gate FET (38) and a p type substrate (16) b) non-volatile memory structure comprising a control gate(12), a floating gate (14), a dual electron injector structure (20, 22, 24) and said p type substrate, the floating gate being the floating gate of said FET (38)
Claim 2
Dependent Claim
68 words
A memory device having in combination, a) dynamic random access memory structure, comprising a storage capacitor (30), a storage node (34), a floating gate FET (38) and a p type substrate (16) b) non-volatile memory structure comprising a control gate(12), a floating gate (14), a dual electron injector structure (20, 22, 24) and said p type substrate, the floating gate being the floating gate of said FET (38)
Claim 3
Dependent Claim
27 words
A device according to Claim 1 wherein said dual electron injector structure is coupled between the floating gate and a channel terminal region (28) of the FET.
Claim 4
Dependent Claim
22 words
A device according to claim 1 wherein said dual electron injector structure is coupled between the floating gate and the control gate.
Claim 5
Independent Claim
21 words
A device according to any preceding claim in combination with means for charging said floating gate consequent on a power failure.
Claim 6
Dependent Claim
20 words
A device according to claim 4 in combination with means for sensing said floating gate FET upon return of power.
Claim 7
Independent Claim
31 words
A device according to any preceding claim in combination with means for erasing stored charge r- said floating gate independently upon data retrieval via the dynamic storage portion of said device.
References Cited (Backward Citations)
No citation records indexed.
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