EP0083211A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device with fuse
Assignee: Fujitsu Ltd
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Filing: 1982-12-23
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Granted: —
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Expires: 2002-12-23
Abstract
Abstract A semiconductor device with a fuse comprises an insulating layer (2) having at least one step, a fusible film (5) on the insulating layer and crossing the step, and a covering film (8) formed on the fusible film. When the fusible film (8) is irradiated with a laser beam (12) at the step, a portion of the fusible film on the upper surface of the insulating layer (2) melts and flows onto the lower surface of the insulating layer without forming a hole, thereby separating the fusible film (5) at the step.
Inventors
- 👤 Hajime Kamioka
- 👤 Mikio Takagi
- 👤 Noriaki Sato
- 👤 Motoo Nakano
- 👤 Takashi Iwai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 14:43
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10W20/494
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
105 words
A semiconductor device with a fuse, comprising an insulating layer (2), a fusible film (5) formed on said insulating layer, a conduction line (6, 7) connected to said fusible film (5), and a covering film (8) formed on said fusible film and said conduction lines, characterized in that said insulating layer (2) has at least one step having an upper surface and a lower surface, said fusible film (5) on the upper surface of said step being made to melt and to flow onto the lower surface of said step by irradiation with an energy beam (12) so that said fusible film (5) is cut.
Claim 2
Dependent Claim
105 words
A semiconductor device with a fuse, comprising an insulating layer (2), a fusible film (5) formed on said insulating layer, a conduction line (6, 7) connected to said fusible film (5), and a covering film (8) formed on said fusible film and said conduction lines, characterized in that said insulating layer (2) has at least one step having an upper surface and a lower surface, said fusible film (5) on the upper surface of said step being made to melt and to flow onto the lower surface of said step by irradiation with an energy beam (12) so that said fusible film (5) is cut.
Claim 3
Dependent Claim
22 words
A semiconductor device according to claim 1, characterized in that said insulating layer (2) is provided with a groove for said step.
Claim 4
Dependent Claim
64 words
A semiconductor device according to claim 1, characterized in that said insulating layer (2) is provided with two adjacent grooves (3, 4) for said steps, and said fusible film (5) on the upper surface of said insulating layer (2) between said two adjacent grooves (3, 4) is made to melt and to flow into said grooves by the irradiation with said energy beam (12).
Claim 5
Dependent Claim
25 words
A semiconductor device according to claim 1, characterized in that said fusible film (5) is formed of polycrystalline silicon, amorphous silicon, aluminum, or metal silicide.
Claim 6
Dependent Claim
26 words
A semiconductor device according to claim 1, characterized in that said insulating layer (2) is formed of silicon dioxide, silicon nitride, silicon oxynitride, or tantalum oxide.
Claim 7
Dependent Claim
26 words
A semiconductor device according to claim 1, characterized in that said covering film (8) is formed of phosphosilicate glass, silicon dioxide, silicon nitride, or silicon oxynitride.
Claim 8
Dependent Claim
22 words
A semiconductor device according to claim 1, characterized in that said energy beam (12) is a laser beam or an electron beam.
References Cited (Backward Citations)
No citation records indexed.
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