EP0081992A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Ceramic packaged semiconductor device
Assignee: Hitachi Ltd
•
Filing: 1982-12-10
•
Granted: —
•
Expires: 2002-12-10
Abstract
Abstract A semiconductor device has a semiconductor element 14 encased in a hollow ceramic package. The portion of the package at which the semiconductor element is disposed is formed from a SiC-based substrate 11 which contains Be or a compound of Be or is provided with a thin SiO 2 layer capable of reacting with glass and with a glass layer 10 or with a thick film circuit on the thin SiO 2 layer.
Inventors
- 👤 Yasuo Matsushita
- 👤 Kousuke Nakamura
- 👤 Mitsuru Ura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 10:01
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/692; H10W76/00; H10W76/10; H10W76/12; H10W76/15; H10W76/157; H10W76/17; H10W76/18; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W72/5524; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
119 words
A semiconductor device, comprising: an insulating substrate comprising non-oxide ceramic as the main component and having a coefficient of thermal expansion approximating to that of a semi- conductor material and a thermal conductivity not smaller than 0.2 cal/sec.cm.°C at room temperature; at least one semiconductor element disposed at a predetermined location on one surface of the insulating substrate; a cap member of ceramic bonded to a preselected portion on the one surface of the insulating substrate, thereby forming a package heremetically enclosing the semiconductor element together with the insulating substrate; and a terminal means whose one end is electrically connected to the semiconductor element within the package and whose other end is exposed at the outside of the package.
Claim 2
Dependent Claim
119 words
A semiconductor device, comprising: an insulating substrate comprising non-oxide ceramic as the main component and having a coefficient of thermal expansion approximating to that of a semi- conductor material and a thermal conductivity not smaller than 0.2 cal/sec.cm.°C at room temperature; at least one semiconductor element disposed at a predetermined location on one surface of the insulating substrate; a cap member of ceramic bonded to a preselected portion on the one surface of the insulating substrate, thereby forming a package heremetically enclosing the semiconductor element together with the insulating substrate; and a terminal means whose one end is electrically connected to the semiconductor element within the package and whose other end is exposed at the outside of the package.
Claim 3
Dependent Claim
134 words
A semiconductor device, comprising: an insulating substrate comprising non-oxide ceramic as the main component containing 0.05 to 5% by weight of at least one of Be and a compound of Be in terms of Be element on the basis of total ceramic and having a relative density of not lower than 90% to the theoretical density; at least one semiconductor element disposed at a predetermined location on one surface of the insulating substrate; a cap member of ceramic bonded to a preselected portion on the one surface of the insulating substrate, thereby forming a package hermetically enclosing the semiconductor element together with the insulating substrate; and a terminal means whose one end is electrically connected to the semiconductor element within said package and whose other end is exposed at the outside of the package.
Claim 4
Dependent Claim
134 words
A semiconductor device, comprising: an insulating substrate comprising non-oxide ceramic as the main component containing 0.05 to 5% by weight of at least one of Be and a compound of Be in terms of Be element on the basis of total ceramic and having a relative density of not lower than 90% to the theoretical density; at least one semiconductor element disposed at a predetermined location on one surface of the insulating substrate; a cap member of ceramic bonded to a preselected portion on the one surface of the insulating substrate, thereby forming a package hermetically enclosing the semiconductor element together with the insulating substrate; and a terminal means whose one end is electrically connected to the semiconductor element within said package and whose other end is exposed at the outside of the package.
Claim 5
Dependent Claim
24 words
The semiconductor device according to claim 1 or claim 2 wherein a cooling fin is mounted on the other surface of the insulating substrate.
Claim 6
Dependent Claim
44 words
The semiconductor device according to claim 1 or claim 2 wherein a cooling fin is formed at the other surface of the insulating substrate integrally with the insulating substrate, the cooling fin being made of the same material as that of the insulating substrate.
Claim 7
Dependent Claim
34 words
The semiconductor device according to claim 1 or claim 2 wherein the non-oxide as a main component ceramic for the insulating substrate is at least one of SiC, Si 3 N 4 and AlN.
Claim 8
Dependent Claim
21 words
The semiconductor device according to claim 5, wherein a cooling fin is mounted on the other surface of the insulating substrate.
Claim 9
Dependent Claim
41 words
The semiconductor device according to claim 5, wherein a cooling fin is formed at the other surface of the insulating substrate integrally with the insulating substrate, the cooling fin being made of the same material as that of the insulating substrate.
Claim 10
Dependent Claim
131 words
A semiconductor device, comprising: an insulating substrate comprising SiC ceramic, containing 0.05 to 5% by weight of at least one of Be and a compound of Be in terms of Be element on the basis of total ceramic and having a relative density of not lower than 90% to the theoretical density; at least one semiconductor element disposed at a predetermined location on one surface of said insulating substrate; . a cap member of cermaic bonded to a preselected portion on the one surface of the insulating substrate, thereby forming a package hermetically enclosing the semiconductor element together with the insulating substate; and a terminal means whose one end is electrically connected to the semiconductor element within the package and whose other end is exposed at the outside of said package.
Claim 11
Dependent Claim
131 words
A semiconductor device, comprising: an insulating substrate comprising SiC ceramic, containing 0.05 to 5% by weight of at least one of Be and a compound of Be in terms of Be element on the basis of total ceramic and having a relative density of not lower than 90% to the theoretical density; at least one semiconductor element disposed at a predetermined location on one surface of said insulating substrate; . a cap member of cermaic bonded to a preselected portion on the one surface of the insulating substrate, thereby forming a package hermetically enclosing the semiconductor element together with the insulating substate; and a terminal means whose one end is electrically connected to the semiconductor element within the package and whose other end is exposed at the outside of said package.
Claim 12
Dependent Claim
28 words
The semiconductor device according to any one of Claims 1 to 8, wherein the cap member is bonded to the insulating substrate by a low melting point glass.
Claim 13
Dependent Claim
42 words
The semiconductor device accoding to Claim 9, wherein the low melting point glass has a coefficient of thermal expansoin of 5 - 10 x 10 -6 /°C at room temperature and a composition of PbO-ZnO-B 2 O 3 as the main components.
Claim 14
Dependent Claim
55 words
The semiconductor device according to Claim 10, wherein the low melting point glass comprises 60-75% by weight of PbO, 5-20% by weight of ZnO, 5-20% by weight of B 2 O 3 , not more than 15% by weight of Si0 2 and not more than 5% by weight of Al 2 O 3 .
Claim 15
Dependent Claim
40 words
The semiconductor device according to Claim 1, 2 or 8, wherein the insulating substrate comprises a non-oxide sintered ceramic, a thin layer capable of reacting with glass provided on the substrate and a glass layer provided on the thin layer.
Claim 16
Dependent Claim
24 words
The semiconductor device according to Claim 12, wherein the thin layer capable of reacting with glass is an oxide layer or an oxidized layer.
Claim 17
Dependent Claim
73 words
The semiconductor device according to Claim 12 or 13, wherein the glass layer has a coefficient of thermal expansion of 2.5 - 6 x 10 -6 /°C at room temperature, and contains Si0 2 as the main component and further contains 5-20% by weight of B 2 0 3 ,. not more than 10% by weight of Na 2 0 and not more than 5% by weight of Al 2 O 3 .
Claim 18
Dependent Claim
52 words
The semiconductor device according to Claim 1, 2 or 8, wherein the insulating substrate comprises a non-oxide sintered ceramic, a first thin layer capable of reacting with glass and a thick film circuit of a mixture of conductor and glass bonded with the thin layer by reaction therewith as a second layer.
Claim 19
Dependent Claim
25 words
The semiconductor device according to Claim 15, wherein the first thin layer capable of reacting with glass is an oxide layer or an oxidized layer.
Claim 20
Dependent Claim
21 words
The semiconductor device according to Claim 15 or 16, wherein the second layer is at least one of conductors and resistors.
Claim 21
Dependent Claim
20 words
The semiconductor device according to Claim 15, 16 or 17 /wherein the second layer is coated with a glass overcoat.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.