EP0080731A2
Expired / Lapsed
EP
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Semiconductor device comprising a buried oxide isolation
Assignee: Toshiba Corp
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Filing: 1982-11-30
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Granted: —
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Expires: 2002-11-30
Abstract
Abstract A semiconductor device comprising a semiconductor substrate (10) having a transistor region (20) in which a field-effect transistor having a channel width of 1 µ or less is formed, and an insulating film (12) deposited in recesses formed in the part of the semiconductor substrate surrounding the transistor region. The angle 8 that is formed between the side wall (22) of the recesses and the imaginary extension of the top surface (24) of the transistor region is defined as: and ε 1 ≥ 1, where ε 1 is the relative permittivity of the insulating film.
Inventors
- 👤 Masami Konaka
- 👤 Naoyuki Shibyo
- 👤 Ryo Dang
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 06:30
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/0124; H10W10/0125; H10W10/0126; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
95 words
A semiconductor device comprising: a semiconductor substrate (10) having a transistor region (20), in which a field-effect transistor having a channel width of 1 p or less is formed; and a insulating film (12) deposited in recesses formed in the part of said semiconductor substrate surrounding said transistor region, characterized in that: the angle 6 formed between the side wall (22) of said recesses and the imaginary extension of the top surface (24) of said transistor region is defined as: and ε I ≥ 1, where EI is the relative permittivity of the insulating film.
Claim 2
Dependent Claim
95 words
A semiconductor device comprising: a semiconductor substrate (10) having a transistor region (20), in which a field-effect transistor having a channel width of 1 p or less is formed; and a insulating film (12) deposited in recesses formed in the part of said semiconductor substrate surrounding said transistor region, characterized in that: the angle 6 formed between the side wall (22) of said recesses and the imaginary extension of the top surface (24) of said transistor region is defined as: and ε I ≥ 1, where EI is the relative permittivity of the insulating film.
Claim 3
Dependent Claim
22 words
A semiconductor device according to claim 1, characterized in that the thickness of said insulating film ranges between 3,000 and 7,000 A.
Claim 4
Dependent Claim
43 words
A semiconductor device according to claim 1, characterized in that a gate electrode (16) is formed on said transistor region of said semiconductor substrate with a gate insulating film (14) interposed therebetween, said gate insulating film being substantially flush with said insulating film.
Claim 5
Dependent Claim
18 words
A semiconductor device according to claim 3, characterized in that said gate electrode extends onto said insulating film.
Claim 6
Dependent Claim
46 words
A semiconductor device according to claim 1, characterized in that said insulating film (12) is formed in said recesses formed in said semiconductor substrate with a thermal oxide film (26) having such a thickness as not to substantially change the shape of said recesses interposed therebetween.
References Cited (Backward Citations)
No citation records indexed.
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