EP0079775A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Protection against erroneous signal generation in semiconductor devices
Assignee: Fujitsu Ltd
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Filing: 1982-11-12
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Granted: —
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Expires: 2002-11-12
Abstract
Abstract A semiconductor device comprises first and second groups of signal lines arranged at different positions adjacent to a surface of a semiconductor substrate (4) and an electrostatic shield layer (6) for the semiconductor substrate, the shield layer being formed under at least one (3,3') of said groups of the signal lines, whereby the semiconductor substrate can effectively be shielded from the signal lines.
Inventors
- 👤 Tomio Nakano
- 👤 Masao Nakano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 21:53
CPC Classifications
H; H10; H10W; H10W42/00; H10W42/60; H10W20/00; H10W20/40; H10W20/41; H10W20/423
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
63 words
A semiconductor device comprising a semiconductor substrate and first and second groups of signal lines extending over the substrate, the lines of said first group being spaced apart from the lines of the said second group over the substrate,characterised by an electrostatic shield layer (6) interposed between one of said first and second groups of signal lines (3) and the said substrate (4).
Claim 2
Dependent Claim
63 words
A semiconductor device comprising a semiconductor substrate and first and second groups of signal lines extending over the substrate, the lines of said first group being spaced apart from the lines of the said second group over the substrate,characterised by an electrostatic shield layer (6) interposed between one of said first and second groups of signal lines (3) and the said substrate (4).
Claim 3
Dependent Claim
26 words
A semiconductor device as claimed in claim 1, wherein said electrostatic shield layer has a means for electrostatically shielding said signal lines from said semiconductor substrate.
Claim 4
Dependent Claim
22 words
A device as claimed in claim 1,wherein the said electrostatic shield layer is connected to a constant-voltage reference terminal of the device.
Claim 5
Dependent Claim
41 words
A semiconductor device as claimed in claim 1, 2 or 3, wherein said electrostatic shield layer is a diffusion layer of opposite conductivity type to the said semiconductor substrate, which diffusion layer is formed at the surface of said semiconductor substrate.
Claim 6
Dependent Claim
36 words
A semiconductor device as claimed in claim 1, 2 or 3, wherein said electrostatic shield layer is a wiring layer formed on said semiconductor substrate, said wiring layer being formed of material of good electrical conductivity.
Claim 7
Dependent Claim
48 words
A semiconductor device as claimed in any preceding claim, wherein said semiconductor device is a dynamic semiconductor memory device in which said first group is a group of input signal lines, for receiving address signals or data, and the said second group is a group of bit lines.
References Cited (Backward Citations)
No citation records indexed.
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