EP0078679A2
Expired / Lapsed
EP
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An electrode connection structure in a semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1982-10-29
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Granted: —
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Expires: 2002-10-29
Abstract
Abstract A compact connection structure between two electrodes made of two types of metals, i.e., metals which respectively make Schottky and ohmic contact with a semiconductor, is provided by using a high melting point metal or silicide thereof which makes Schottky contact with a semiconductor as one electrode metal (13b-22). These two types of electrodes (13b-22,23) can be brought into direct contact with each other, enabling elimination of through hole connections between them and therefore increased semiconductor device density.
Inventors
- 👤 Yoshiro Nakayama
- 👤 Hidetake Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 15:49
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D30/80; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/60; H10D64/62; H10D64/64; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
104 words
A semiconductor device comprising a semiconductor layer defining an active region (12a) and characterised by: a first part (22) of an electrode (24) on the active region (12a) and of a material selected from the group of high melting point metals and silicide of high melting point metals and making Schottky contact with the active region; and, a second part (23) of the electrode (24), on the active region, in contact with the first part (22) of the electrode, and of a material different from the material of the first part (22) of the electrode and making ohmic contact with the active region (12a).
Claim 2
Dependent Claim
104 words
A semiconductor device comprising a semiconductor layer defining an active region (12a) and characterised by: a first part (22) of an electrode (24) on the active region (12a) and of a material selected from the group of high melting point metals and silicide of high melting point metals and making Schottky contact with the active region; and, a second part (23) of the electrode (24), on the active region, in contact with the first part (22) of the electrode, and of a material different from the material of the first part (22) of the electrode and making ohmic contact with the active region (12a).
Claim 3
Dependent Claim
110 words
A semiconductor device comprising a semiconductor layer defining an active region (12a) and a first electrode (13b) on a first active region and making Schottky contact with the first active region; and characterised by: a first part (22) of a second electrode (24) on a second active region (12a) and extending from the first electrode with the same material as that of said first electrode; and a second part (23) of the second electrode (24) on the second active region, in contact with said first part (22) of the second electrode, and of material different from that of the first electrode and making ohmic contact with the second active region.
Claim 4
Dependent Claim
110 words
A semiconductor device comprising a semiconductor layer defining an active region (12a) and a first electrode (13b) on a first active region and making Schottky contact with the first active region; and characterised by: a first part (22) of a second electrode (24) on a second active region (12a) and extending from the first electrode with the same material as that of said first electrode; and a second part (23) of the second electrode (24) on the second active region, in contact with said first part (22) of the second electrode, and of material different from that of the first electrode and making ohmic contact with the second active region.
Claim 5
Dependent Claim
19 words
A semiconductor device according to claim 2, wherein the first and second active regions are the same active region.
Claim 6
Dependent Claim
136 words
A semiconductor device comprising an insulating or semi-insulating substrate (11), at least one active region (12a) made of a compound semiconductor at the surface of the substrate, and a first electrode (13b) on the surface of at least one of the active regions of a metal which makes Schottky contact with the compound semiconductor, characterised in that an extending portion (22) of the first electrode (13b) lies on the surface of at least one of the active regions and that the part of the active region around the extending portion (22) of the electrode is covered with a metal layer (23) straddling the extending portion (22) of the electrode and making ohmic contact with the said part of active region, the metal layer and the electrode portion extending over the active region forming a second electrode.
Claim 7
Dependent Claim
136 words
A semiconductor device comprising an insulating or semi-insulating substrate (11), at least one active region (12a) made of a compound semiconductor at the surface of the substrate, and a first electrode (13b) on the surface of at least one of the active regions of a metal which makes Schottky contact with the compound semiconductor, characterised in that an extending portion (22) of the first electrode (13b) lies on the surface of at least one of the active regions and that the part of the active region around the extending portion (22) of the electrode is covered with a metal layer (23) straddling the extending portion (22) of the electrode and making ohmic contact with the said part of active region, the metal layer and the electrode portion extending over the active region forming a second electrode.
References Cited (Backward Citations)
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