EP0078165A2
Expired / Lapsed
EP
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A semiconductor device having a control wiring layer
Assignee: Toshiba Corp
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Filing: 1982-10-22
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Granted: —
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Expires: 2002-10-22
Abstract
Abstract A heating wiring layer (122) is formed on a substrate (120). An insulation layer (124) is formed on the heating wiring layer (122) so as to cover with the heating wiring layer. A control wiring layer (126), which acts as a fuse device, is formed on the insulation layer (124) transverse to the heating wiring layer (122). A programming current is directed through the heating wiring layer (122) under the control wire layer (126) which is to be programmed. The heat generated by the programming current is transmitted through the insulation layer (124) to the portion (134) or the control wiring layer which crosses the heating wiring layer (122). As a result, the control wiring layer (126) is melted by the heat and thus interrupted. Alternatively, the heat may form a eutectic mixture with the materials of two contiguous wiring layers together forming the control layer, to complete the continuity of the control layer.
Inventors
- 👤 Yukimasa C/O Patent Division Uchida
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 21:26
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; H10W20/493
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
62 words
A semiconductor device having a control wiring layer (126) which changes its resistance on being heated, characterised in that, for selectively supplying heat to the control wiring layer (126), a heating wiring layer (122) is provided closely adjacent to the control wiring layer, but spaced therefrom by an insulation layer (124), the heating wiring layer (122) generating heat by current conduction therein.
Claim 2
Dependent Claim
62 words
A semiconductor device having a control wiring layer (126) which changes its resistance on being heated, characterised in that, for selectively supplying heat to the control wiring layer (126), a heating wiring layer (122) is provided closely adjacent to the control wiring layer, but spaced therefrom by an insulation layer (124), the heating wiring layer (122) generating heat by current conduction therein.
Claim 3
Dependent Claim
23 words
A semiconductor device according to claim 1, in which the control wiring layer (126) is disposed transversely to the heating wiring layer (122).
Claim 4
Dependent Claim
31 words
A semiconductor device according to claim 1 or claim 2,' in which the control wiring layer (126) is such that it becomes interrupted by heat from the heating wiring layer (122).
Claim 5
Dependent Claim
17 words
A semiconductor device according to claim 3, in which the control wiring layer (126)'is made of aluminium.
Claim 6
Dependent Claim
138 words
A semiconductor device according to claim 1 or claim 2, in which the control wiring layer is formed by a first, high resistance wiring layer (158) overlying the insulation layer (156), and a second wiring layer (160) overlying the first wiring layer (158) and having a discontinuity (162) therein adjacent the heating wiring layer (154), the second wiring layer (160) being made of a low resistance material which forms with the material of the first wiring layer a low resistance eutectic (165) when heat is generated by the heating wiring layer (154), whereby the parts of the second wiring layer (160) on the two sides of the discontinuity (162) are normally bridged by the high resistance first wiring layer (158), but are bridged by the low resistance eutectic (165) on heat being generated by the heating layer (154).
Claim 7
Dependent Claim
63 words
A semiconductor device according to claim 5, in which a second insulation layer (166) is formed on the first wiring layer (158) where the first wiring layer (158) overlies the heating layer (154), and the second wiring layer (160) on each side of the discontinuity (162) is formed partly on the first wiring layer (158) and partly on the second insulation layer (166).
Claim 8
Dependent Claim
25 words
A semiconductor device according to claim 5 or claim 6, in which the first wiring layer (158) is made of a high resistance polycrystalline silicon.
Claim 9
Dependent Claim
22 words
A semiconductor device according to claim 7, in which the first wiring layer (158) is made of N conductivity type polycrystalline silicon.
Claim 10
Dependent Claim
23 words
A semiconductor device according to any one of claims 5 to 8, in which the second wiring layer (160) is made of aluminium.
Claim 11
Dependent Claim
103 words
A semiconductor device according to claim 1 or claim 2, in which the control wiring layer is formed by a first wiring layer (176) overlying the insulation layer (174), made of a low resistance material, and having a discontinuity adjacent the heating layer (172); and a second wiring layer (180) which is formed on the first wiring layer (172) so as to bridge the discontinuity, and which is made of a material having a high resistance but forms a low resistance eutectic mixture (184) with the material of the first wiring layer (176) in response to heat generated by the heating layer (172).
Claim 12
Dependent Claim
22 words
A semiconductor device according to claim 10, in which the second wiring layer (180) is made of a high resistance polycrystalline silicon.
Claim 13
Dependent Claim
22 words
A semiconductor device according to claim 11, in which the second wiring layer (180) is made of N conductivity type polycrystalline silicon.
Claim 14
Dependent Claim
23 words
A semiconductor device according to any one of claims 9 to 11, in which the first wiring layer (176) is made of aluminium.
Claim 15
Dependent Claim
27 words
A semiconductor device according to any one of the preceding claims, in which the heating wiring layer (122, 154, 172) is made of low resistance polycrystalline silicon.
Claim 16
Dependent Claim
29 words
A semiconductor device according to any one of claims 1 to 13, in which the heating wiring layer (122, 154, 172) is made of a single crystal of silicon.
Claim 17
Dependent Claim
47 words
A semiconductor device according to any one of claims 1 to 13, in which the heating wiring layer (122, 154, 172) is made of a metal having a high melting point, or a silicide of such a metal, or a mixture of the metal and its silicide.
References Cited (Backward Citations)
No citation records indexed.
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