EP0077930A2
Expired / Lapsed
EP
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Gate turn-off thyristor
Assignee: Toshiba Corp
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Filing: 1982-09-28
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Granted: —
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Expires: 2002-09-28
Abstract
Abstract A gate turn-off thyristor is provided with a plurality of gate electrodes (40a to 40d) with substantially the same areas formed on a second base layer (14). The gate electrodes (40a to 40d) are arranged so as to respectively surround a plurality of cathode electrodes (18l to 18n).
Inventors
- 👤 Katsuhiko Takigami
- 👤 Makoto Azuma
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 10:55
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/60; H10D64/00; H10D64/20; H10D64/23; H10D64/233; H10D64/27; H10D64/291
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
159 words
A gate turn-off thyristor comprising a first emitter layer of a first conductivity type, a first base layer of a second conductivity type formed on said first emitter layer, a second base layer of the first conductivity type formed on said first base layer, a plurality of second emitter layers of the second conductivity type formed on said second base layer, a plurality of cathode electrodes formed on said second emitter layer, a gate electrode disposed on said second base so as to surround a pair of said second emitter layers and said cathode layer, and an anode electrode formed on said first emitter layer of the first conductivity type, characterized in that said gate electrode is comprised of a plurality of electrodes (40a, 40b, 40c, 40d) with substantially the same areas, each of said gate electrodes surrounding at least a pair of said second emitter layers (16 1 to 16n) and said cathode electrode (18 1 to 18n).
Claim 2
Dependent Claim
159 words
A gate turn-off thyristor comprising a first emitter layer of a first conductivity type, a first base layer of a second conductivity type formed on said first emitter layer, a second base layer of the first conductivity type formed on said first base layer, a plurality of second emitter layers of the second conductivity type formed on said second base layer, a plurality of cathode electrodes formed on said second emitter layer, a gate electrode disposed on said second base so as to surround a pair of said second emitter layers and said cathode layer, and an anode electrode formed on said first emitter layer of the first conductivity type, characterized in that said gate electrode is comprised of a plurality of electrodes (40a, 40b, 40c, 40d) with substantially the same areas, each of said gate electrodes surrounding at least a pair of said second emitter layers (16 1 to 16n) and said cathode electrode (18 1 to 18n).
Claim 3
Dependent Claim
40 words
A gate turn-off thyristor according to claim 1, characterized in that said plurality of electrodes (40a to 40d) are disposed on said second base layer (14) and arranged symmetrical with respect to the center of said second base layer (14).
Claim 4
Dependent Claim
26 words
A gate turn-off thyristor according to claim 2, characterized in that each of said plurality of gate electrodes (40a to 40d) is shaped like a fan.
References Cited (Backward Citations)
No citation records indexed.
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