EP0077020A2
Expired / Lapsed
EP
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Method of manufacturing single-crystal film
Assignee: Hitachi Ltd
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Filing: 1982-10-06
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Granted: —
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Expires: 2002-10-06
Abstract
Abstract The whole surface of a polycrystalline or amorphous semiconductor film (5) disposed so as to continuously cover the surface of a single-crystal substrate (3) and an insulating film (4) is irradiated with a laser beam or electron beam, thereby to selectively melt only those parts (5') of the polycrystalline or amorphous semiconductor film which overlie the insulating film. Thus, a single-crystal semiconductor film is formed on only the Insular inslating film (4) formed on the single-crystal substrate (3).
Inventors
- 👤 Masao Tamura
- 👤 Naotsugu Yoshihiro
- 👤 Nobuyoshi Natsuaki
- 👤 Masanobu Miyao
- 👤 Hideo Sunami
- 👤 Takashi Tokuyama
- 👤 Makoto Ohkura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 14:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/60; H10P14/24; H10P14/27; H10P14/271; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3421; H10P14/38; H10P14/3802; H10P14/3808; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10P95/90; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S117/905; Y10S148/00; Y10S148/003; Y10S148/09; Y10S148/123; Y10S438/00; Y10S438/969
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
110 words
A method of manufacturing a single-crystal film, comprising (a) the step of depositing an insulating film (4) having openings, in a desired position on a single-crystal substrate (3); (b) the step of depositing a polycrystalline or amorphous semiconductor film (5) so as to continuously cover exposed surface parts of said substrate (3) and said insulating film (4); and (c) the step of irradiating a whole surface of said polycrystalline or amorphous semiconductor film (5) with a laser beam or electron beam, whereby those parts of said polycrystalline or amorphous semiconductor film (5) which are deposited on said insulating film (4) are selectively melted and turned into a single crystal (5').
Claim 2
Independent Claim
110 words
A method of manufacturing a single-crystal film, comprising (a) the step of depositing an insulating film (4) having openings, in a desired position on a single-crystal substrate (3); (b) the step of depositing a polycrystalline or amorphous semiconductor film (5) so as to continuously cover exposed surface parts of said substrate (3) and said insulating film (4); and (c) the step of irradiating a whole surface of said polycrystalline or amorphous semiconductor film (5) with a laser beam or electron beam, whereby those parts of said polycrystalline or amorphous semiconductor film (5) which are deposited on said insulating film (4) are selectively melted and turned into a single crystal (5').
Claim 3
Dependent Claim
33 words
The method of claim 1, further comprising, following the step (c), the step of selectively removing the polycrystalline or amorphous semiconductor film (5) which has remained without being turned into the single crystal.
Claim 4
Dependent Claim
24 words
The method of claim 1 or 2, wherein said polycrystalline or amorphous semiconductor film (5) is a silicon film or a compound semiconductor film.
Claim 5
Independent Claim
31 words
The method of any of claims 1 to 3, wherein said insulating film (4) is made of SiO 2 , Si 3 N 4 and/or A 1 2 0 3 .
Claim 6
Independent Claim
25 words
The method of any of claims 1 to 4, wherein said polycrystalline or amorphous silicon film (5) is about 100 nm - 1 µm thick.
Claim 7
Independent Claim
42 words
The method of any of claims 1 to 5, wherein said polycrystalline silicon film (5) is irradiated with the laser beam emitted by a Q-switched ruby or YAG pulse laser which has an intensity of approximately 1 - 2 J/cm 2 .
Claim 8
Independent Claim
45 words
The method of any of claims 1 to 5, wherein said polycrystalline silicon film (5) is irradiated with the laser beam emitted by a CW argon laser which has an intensity of approximately 5 - 7 W and a beam diameter of approximately 50 µm.
References Cited (Backward Citations)
No citation records indexed.
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