Patent US3269446A successfully refreshed from Google Patents.
EP0076587A2
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Method of forming thin film transistors
Assignee: Xerox Corp
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Filing: 1982-09-17
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Granted: —
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Expires: 2002-09-17
Abstract
Abstract In the formation of a thin film transistor, integrity of the semiconductor-insulator and semiconductor-conductor interfaces is preserved by depositing layers of insulator (13, 33), semiconductor (15, 35), and conductor (17, 37) in successive sequence under continuous vacuum. The method minimizes contamination exposure of the critical interfaces between semiconductor and gate insulator and semiconductor and source-drain contacts of a thin film transistor.
Inventors
- 👤 Michael Poleshuk
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 17:19
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0231; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/675; H10D64/00; H10D64/01; H10D64/011; H10D86/40; H10D86/60; Y; Y10; Y10S; Y10S148/00; Y10S148/063; Y10S148/10; Y10S148/105; Y10S148/169; Y10S438/00; Y10S438/913; Y10S438/98
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
50 words
A method of forming an active region of a thin film transistor, including the step of selectively depositing thin layers of an insulator (13, 33), a semiconductor (15, 35) and a conductive material (17, 37) upon surface portions of a substrate (18, 30, 32) in successive sequence under continuous vacuum.
Claim 2
Independent Claim
50 words
A method of forming an active region of a thin film transistor, including the step of selectively depositing thin layers of an insulator (13, 33), a semiconductor (15, 35) and a conductive material (17, 37) upon surface portions of a substrate (18, 30, 32) in successive sequence under continuous vacuum.
Claim 3
Dependent Claim
24 words
The method of claim 1, wherein said surface portions of the substrate are exposed by a pattern of openings in a mask (11, 31).
Claim 4
Dependent Claim
46 words
The method of claim 2, wherein said mask comprises a photoresist mask formed by selectively removing portions of a photoresist masking layer deposited upon said substrate to expose the surface portions of said substrate and side wall surfaces (19) of the openings in said photoresist mask.
Claim 5
Dependent Claim
43 words
The method of claim 3, including the further step of depositing a thin film of insulating material on the side wall surfaces of the openings in said photoresist mask prior to the step of depositing said layers of insulator, semiconductor and conductive material
Claim 6
Dependent Claim
38 words
The method of claim 3, wherein a thin film of insulating material is deposited on the side wall surfaces of the openings in said photoresist mask concurrently with the deposition under vacuum of said layer of insulator material
Claim 7
Independent Claim
36 words
The method of any preceding claim, wherein the surface portions of said substrate comprise surface portions of an insulator layer (18), and wherein said substrate includes at least one other conductive layer (12) underlying-said insulator layer.
Claim 8
Independent Claim
162 words
A method of forming a thin film transistor, including the steps of: a) forming a gate electrode (12, 32) of electroconductive material on a portion of a surface of an insulative substrate (10, 30); b) superimposing a masking layer (11, 31) of resist material having in it a pattern of openings exposing selected portions of the underlying material; c) sequentially depositing under vacuum a layer of insulator material (13, 33), a layer of semiconductor material (15, 35) and a layer of conductive contact material (17, 37) on the masking layer and the underlying portions exposed thereby; d) removing the masking layer and the materials deposited thereon; e) selectively forming a layer of conductor material (20, 36) to form source and drain contacts to each incremental body of semiconductor material, the layer having in it openings exposing portions of the surface of the incremental portions of contact material, and f) removing the exposed portions of contact material to expose the underlying semiconductor material
Claim 9
Independent Claim
162 words
A method of forming a thin film transistor, including the steps of: a) forming a gate electrode (12, 32) of electroconductive material on a portion of a surface of an insulative substrate (10, 30); b) superimposing a masking layer (11, 31) of resist material having in it a pattern of openings exposing selected portions of the underlying material; c) sequentially depositing under vacuum a layer of insulator material (13, 33), a layer of semiconductor material (15, 35) and a layer of conductive contact material (17, 37) on the masking layer and the underlying portions exposed thereby; d) removing the masking layer and the materials deposited thereon; e) selectively forming a layer of conductor material (20, 36) to form source and drain contacts to each incremental body of semiconductor material, the layer having in it openings exposing portions of the surface of the incremental portions of contact material, and f) removing the exposed portions of contact material to expose the underlying semiconductor material
Claim 10
Dependent Claim
37 words
A method as claimed in claim 7, including the further step of forming a layer of insulator material (18) on the gate electrode(s) and adjacent portions of the substrate surface prior to superimposition of the masking layer.
Claim 11
Dependent Claim
21 words
The method of claim 7 or 8, wherein the exposed portions of said conductive contact layer are removed by dry etching.
Claim 12
Dependent Claim
12 words
The method of claim 9, wherein said dry etching comprises plasma etching.
Claim 13
Dependent Claim
13 words
The method of claim 9, wherein said dry etching comprises ion beam milling.
References Cited (Backward Citations)
No citation records indexed.
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