Patent US4933326A successfully refreshed from Google Patents.
EP0076161A2
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Process for manufacturing a multi-layer semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1982-09-29
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Granted: —
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Expires: 2002-09-29
Abstract
Abstract A process for manufacturing a semiconductor device comprises providing a substrate (1); forming a plurality of semiconductor layers (S 1 ,S 2 ) on the substrate (1), each layer including one or more semiconductor elements; and forming an insulating film (1 1 ) between each pair of the semiconductor layers (S 1 ,S 2 ) to insulate the layers from one another. The process is characterized by the steps of forming in at least one semiconductor layer a monitoring device (M) for evaluating the functions of semiconductor elements formed in the one semiconductor layer (S 1 ,S 2 ); and evaluating the functions.
Inventors
- 👤 Junji Sakurai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-23 19:19
CPC Classifications
H; H10; H10P; H10P74/00; H10P74/27; H10P74/277; H10D; H10D88/00; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/10
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
101 words
A process for manufacturing a semiconductor device the process comprising providing a substrate (1); forming a plurality of semiconductor layers (S 1 , S 2 ) on the substrate (1), each layer including one or more semiconductor elements;and forming an insulating film (I 1 ) between each pair of the semiconductor layers (S 1 ,S 2 ) to insulate the layers from one another, the process being characterized by the steps of forming in at least one semiconductor layer a monitoring device (M) for evaluating the functions of semiconductor elements formed in the one semiconductor layer (S1,S2); and evaluating the functions.
Claim 2
Dependent Claim
101 words
A process for manufacturing a semiconductor device the process comprising providing a substrate (1); forming a plurality of semiconductor layers (S 1 , S 2 ) on the substrate (1), each layer including one or more semiconductor elements;and forming an insulating film (I 1 ) between each pair of the semiconductor layers (S 1 ,S 2 ) to insulate the layers from one another, the process being characterized by the steps of forming in at least one semiconductor layer a monitoring device (M) for evaluating the functions of semiconductor elements formed in the one semiconductor layer (S1,S2); and evaluating the functions.
Claim 3
Dependent Claim
34 words
A process according to claim 1, wherein a semiconductor layer (S 2 ) is only formed if the functions of semiconductor elements formed in the previous semiconductor layer (S 1 ) are successfully evaluated.
Claim 4
Dependent Claim
57 words
A process according to claim 1 or claim 2, wherein a plurality of monitoring devices (M) are formed and connected with conductors (37) formed between selected semiconductor layers;and when the semiconductor device has been formed the functions of semiconductor elements of each of the selected semiconductor layers (S 1 ,S 2 ) are evaluated as a whole.
Claim 5
Dependent Claim
42 words
A process according to any of the preceding claims, wherein a plurality of chips (C) is formed on the substrate (1) in the form of a matrix, a monitoring device (M) being manufactured in at least one of the plurality of chips.
Claim 6
Dependent Claim
52 words
A process according to any of the preceding claims, wherein a plurality of chips (C) is formed on the substrate (1) in the form of a matrix; scribe lines (42) are formed between the chips (C); and a monitoring device (50) is manufactured on a selected portion of the scribe lines (42).
Claim 7
Dependent Claim
33 words
A process according to claim 4 or claim 5, further comprising the steps of at least partly exposing the side surfaces of the chips (81) and heating the chips in a hydrogen atmosphere.
Claim 8
Dependent Claim
60 words
A process according to any of the preceding claims, further comprising the steps of forming impurity regions (44, 46, 49, 53, 54) of the semiconductor elements by means of ion implantation; activating the implanted impurity ions by irradiation with an energy beam; and forming the insulating material regions (45, 48, 52) of the semiconductor elements by means of high-pressure oxidation.
Claim 9
Dependent Claim
62 words
A process according to any of claims 1 to 5, further comprising the steps of forming impurity regions of the semiconductor elements (44, 46, 49, 53,54) by means of ion implantation; activating the implanted impurity ions by irradiation with an energy beam; and forming the insulating material regions of the semiconductor elements with an oxide film (45,48) by means of low-temperature sputtering.
Claim 10
Dependent Claim
82 words
A process according to claim 7 or claim 8, further comprising the steps of selectively removing and partly exposing the insulating film so as to expose a single crystalline portion of the substrate (40); forming a polycrystalline semiconductor layer (44) on the insulating film (41); carrying out single crystallization of the polycrystalline semiconductor layer (44), using as a nucleus the single crystalline portion of the substrate (40) by irradiating selected portions of the polycrystalline semiconductor layer (44) with an energy beam (43).
Claim 11
Dependent Claim
129 words
A process for manufacturing a three-dimensional LSI device, the process including the steps of providing a substrate (1); forming a plurality of semiconductor layers (S 1 ,S 2 ) on the substrate (1), each layer including one or more semiconductor elements; and forming an insulating film (I 1 ) between each pair of the semiconductor layers (S 1 ,S 2 ) to insulate the layers from one another, the process being characterized by the steps of forming impurity regions (46, 47, 49, 51, 53, 54) by means of ion implantation; activating the implanted impurity ions by irradiation with an energy beam; and forming insulating material regions (45, 48, 57) of the semiconductor elements by means of high pressure oxidation, or with an oxide film formed by low temperature sputtering.
Claim 12
Dependent Claim
129 words
A process for manufacturing a three-dimensional LSI device, the process including the steps of providing a substrate (1); forming a plurality of semiconductor layers (S 1 ,S 2 ) on the substrate (1), each layer including one or more semiconductor elements; and forming an insulating film (I 1 ) between each pair of the semiconductor layers (S 1 ,S 2 ) to insulate the layers from one another, the process being characterized by the steps of forming impurity regions (46, 47, 49, 51, 53, 54) by means of ion implantation; activating the implanted impurity ions by irradiation with an energy beam; and forming insulating material regions (45, 48, 57) of the semiconductor elements by means of high pressure oxidation, or with an oxide film formed by low temperature sputtering.
References Cited (Backward Citations)
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