EP0075875A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of making integrated circuits comprising dielectric isolation regions
Assignee: General Electric Co
•
Filing: 1982-09-24
•
Granted: —
•
Expires: 2002-09-24
Abstract
Abstract A method of reducing lateral field oxidation in the vicinity of the active regions of a silicon substrate in which integrated circuit elements are to be formed is described. The method utilizes a first thin layer of silicon dioxide in contact with the active region of the substrate and a second thick layer of silicon nitride overlying the thin layer of silicon dioxide. The thin layer of silicon dioxide is provided with peripheral portions constituted of a silicon oxynitride.
Inventors
- 👤 Mario Ghezzo
- 👤 Paul Alan Mcconnelee
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 17:51
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10P14/61; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6524; H10P14/6526; H10P14/6529; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/10; H10W10/13; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/662; H10P14/668; H10P14/6681; H10P14/6682
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
202 words
The method of providing in a substrate of semiconductor material of one conductivity type having a major surface, an active region which is surrounded by a thick layer of silicon dioxide, providing said substrate of silicon semiconductor material of one conductivity type having a major surface including said active region, forming a thin layer of silicon dioxide on said major surface, forming a thick layer of silicon nitride on said layer of silicon dioxide, patterning said layer of silicon nitride to produce a retained portion thereof overlying and in registry with said active region of said surface, patterning said layer of silicon dioxide to produce a retained portion thereof overlying and in registry with said active region of said major surface thereby exposing said major surface surrounding said active region, converting the peripheral portions of said retained portion of said layer of silicon dioxide into a silicon oxynitride, heating said substrate in an oxidizing atmosphere to a temperature and for a time to cause the silicon semiconductor material surrounding said active region to be converted to silicon dioxide, removing said retained portion of said layer of silicon nitride and said retained portion of said layer of silicon dioxide overlying said active region.
Claim 2
Independent Claim
202 words
The method of providing in a substrate of semiconductor material of one conductivity type having a major surface, an active region which is surrounded by a thick layer of silicon dioxide, providing said substrate of silicon semiconductor material of one conductivity type having a major surface including said active region, forming a thin layer of silicon dioxide on said major surface, forming a thick layer of silicon nitride on said layer of silicon dioxide, patterning said layer of silicon nitride to produce a retained portion thereof overlying and in registry with said active region of said surface, patterning said layer of silicon dioxide to produce a retained portion thereof overlying and in registry with said active region of said major surface thereby exposing said major surface surrounding said active region, converting the peripheral portions of said retained portion of said layer of silicon dioxide into a silicon oxynitride, heating said substrate in an oxidizing atmosphere to a temperature and for a time to cause the silicon semiconductor material surrounding said active region to be converted to silicon dioxide, removing said retained portion of said layer of silicon nitride and said retained portion of said layer of silicon dioxide overlying said active region.
Claim 3
Dependent Claim
38 words
The combination of claim 1 in which prior to heating said substrate in an oxidizing atmosphere, the exposed portion of said silicon substrate is etched to a first depth to form a moat therein surrounding said active region.
Claim 4
Dependent Claim
44 words
The combination of claim 2 in which said first depth is approximately 57% of the thickness of silicon oxide to be formed thereon by said heating step whereby the surfaces of said active region and thermally grown layer of silicon dioxide are substantially coplanar.
Claim 5
Dependent Claim
61 words
The combination of claim 1 in which said substrate and said retained portion of said layer of silicon dioxide are exposed to an atmosphere of dry ammonia in a nitrogen carrier at a temperature of about 1080°C and for a time to convert an appreciable lateral portion of said retained portion of said layer of silicon dioxide to a silicon oxynitride.
Claim 6
Dependent Claim
17 words
The combination of claim 4 in which said appreciable lateral portion is greater than about 500 Angstroms.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.