EP0075454A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device having new conductive interconnection structure and method for manufacturing the same
Assignee: Fujitsu Ltd
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Filing: 1982-09-17
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Granted: —
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Expires: 2002-09-17
Abstract
Abstract A reliable multilevel interconnection is attained by using polyacetylene layers. Nondoped polyacetylene is dielectric but is conductive when it is doped with an impurity such as AsF 5 , which makes it possible to eliminate the necessity of opening a contact hole or via hole in an insulating layer from a process for manufacturing a multilevel interconnection so that a disconnection and/or short circuit do not occur due to the evenness of the layers even if the layer number is increased.
Inventors
- 👤 Nobuo Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 18:40
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10K; H10K85/00; H10K85/10; H10K85/141; H10K85/143; H10W; H10W20/00; H10W20/01; H10W20/40; H10W20/41; H10W20/44; H10W20/4473
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
56 words
A semiconductor device comprising: a semiconductor substrate; a diffused region formed in said semiconductor substrate; a polyacetylene layer formed on said semiconductor substrate, said polyacetylene layer having an impurity doped region; and a wiring pattern electrically connected to said diffused region, at least a portion of said wiring pattern being formed by said impurity doped region.
Claim 2
Dependent Claim
56 words
A semiconductor device comprising: a semiconductor substrate; a diffused region formed in said semiconductor substrate; a polyacetylene layer formed on said semiconductor substrate, said polyacetylene layer having an impurity doped region; and a wiring pattern electrically connected to said diffused region, at least a portion of said wiring pattern being formed by said impurity doped region.
Claim 3
Dependent Claim
17 words
A semiconductor device according to claim 1, wherein said impurity doped region contacts with said diffused region.
Claim 4
Dependent Claim
51 words
A semiconductor device according to claim 1, said semiconductor device further comprising a first and a second conductive layers, wherein said impurity doped region is formed between said first and second conductive layers and said first and second conductive layers are electrically connected to each other by said impurity doped region.
Claim 5
Dependent Claim
54 words
A semiconductor device according to claim 1, wherein said doped impurity is selected from the group consisting of halogens such as Cl 2 , Br 2 I 2 , fluorides such as AsF 5 , iodides such as ICI, boron compounds, sulfuric acid, nitric acid, alkali.metal such as Li, Na, K, and mixtures thereof.
Claim 6
Dependent Claim
17 words
A semiconductor device according to claim 1, wherein said polyacetylene layer is covered with a polyimide layer.
Claim 7
Independent Claim
62 words
A method for manufacturing a semiconductor device, including the steps of: preparing a semiconductor substrate; forming a polyacetylene layer on said semiconductor substrate; covering said polyacetylene layer with a mask having a desired pattern; selectively introducing impurity atoms into a region of said polyacetylene layer, said region being not covered with said mask, and forming a conductive layer on said polyacetylene layer.
Claim 8
Independent Claim
62 words
A method for manufacturing a semiconductor device, including the steps of: preparing a semiconductor substrate; forming a polyacetylene layer on said semiconductor substrate; covering said polyacetylene layer with a mask having a desired pattern; selectively introducing impurity atoms into a region of said polyacetylene layer, said region being not covered with said mask, and forming a conductive layer on said polyacetylene layer.
References Cited (Backward Citations)
No citation records indexed.
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