EP0073713A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Process for self-healing dielectrics
Assignee: Fairchild Semiconductor Corp
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Filing: 1982-08-24
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Granted: —
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Expires: 2002-08-24
Abstract
Abstract Defects in dielectric layers exhibiting low dielectric strength on silicon substrates (11) are deliberately damaged during manufacture to allow their repair by the formation of dielectric plugs (13B). The defects are damaged by the application of an electric field, and are repaired by the selective oxidation or nitridation of the silicon substrate underlying the damaged areas of dielectrics.
Inventors
- 👤 Andrew C. Tickle
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 21:54
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P95/00; H10P95/80
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
62 words
A method of detecting and repairing latent defects in a dielectric layer on a semiconductor substrate which is characterized by: stressing the dielectric layer by applying a voltage across said layer so as to damage weak areas of said dielectric layer; and forming additional dielectric on those regions of the semiconductor substrate beneath the weak areas of dielectric damaged by said voltages.
Claim 2
Independent Claim
62 words
A method of detecting and repairing latent defects in a dielectric layer on a semiconductor substrate which is characterized by: stressing the dielectric layer by applying a voltage across said layer so as to damage weak areas of said dielectric layer; and forming additional dielectric on those regions of the semiconductor substrate beneath the weak areas of dielectric damaged by said voltages.
Claim 3
Dependent Claim
39 words
The method of claim 1 characterized in that said voltage is equal to a voltage just beneath the maximum voltage to which the regions of said dielectric layer not containing ratent defects are capable of being subjected without damage.
Claim 4
Dependent Claim
42 words
The method of claim 1 or 2 characterized in that said voltage stress is greater than the maximum voltage to hich said dielectric layer will be subjected in the operation of 6 finished product made using said substrate and said dielectric layer.
Claim 5
Dependent Claim
45 words
The method of claim 1 or 2 characterized in that said voltage stress is less than or equal to the maximum voltage to which said dielectric layer will be subjected in the operation of a finished product made using said substrate and said dielectric layer.
Claim 6
Independent Claim
38 words
The method of any one of claims 1-4 characterized in that said dielectric layer comprises a layer of oxide of silicon formed on a silicon substrate and a layer of silicon nitride formed on said layer of oxide.
Claim 7
Dependent Claim
16 words
The method of claim 5 characterized in that said additional dielectric comprises an oxide of silicon.
Claim 8
Dependent Claim
31 words
The method of claim 6 characterized in that said additional dielectric is oxide formed by thermal oxidation of said silicon substrate through defects in said dielectric layer formed by said voltage.
Claim 9
Independent Claim
24 words
The method of any one of claims 1-4 characterized in that said dielectric layer comprises a silicon nitride layer formed on a silicon substrate.
Claim 10
Dependent Claim
16 words
The method of claim 8 characterized in that said additional dieletric comprises an oxide of silicon.
Claim 11
Dependent Claim
14 words
The method of claim 8 characterized in that said additional dielectric comprises silicon nitride.
Claim 12
Dependent Claim
29 words
The method of claim 8 characterized in that said dielectric layer comprises silicon nitride formed by direct nitridation, and said additional dielectric comprises silicon nitride formed by direct nitridation.
Claim 13
Dependent Claim
42 words
A semiconductor structure characterized by: a silicon substrate; a dielectric formed on said silicon substrate, said dielectric containing pinhole areas; and plugs of dielectric formed in said pinhole areas, thereby to form a continuous dielectric over the surface of said silicon substrate.
Claim 14
Dependent Claim
42 words
A semiconductor structure characterized by: a silicon substrate; a dielectric formed on said silicon substrate, said dielectric containing pinhole areas; and plugs of dielectric formed in said pinhole areas, thereby to form a continuous dielectric over the surface of said silicon substrate.
Claim 15
Dependent Claim
32 words
The structure of Claim 12 characterized in that said dielectric comprises silicon nitride and wherein said plugs cf dielectric comprise silicon nitride formed by direct nitridation of said substrate through said pinholes.
Claim 16
Dependent Claim
24 words
The structure of Claim 12 characterized in that said dielectric comprises silicon nitride and wherein said plugs of dielectric comprise an oxide of silicon.
Claim 17
Dependent Claim
25 words
The structure of Claim 12 characterized in that said dielectric comprises a layer of silicon oxide upon which is formed a layer of silicon nitride.
Claim 18
Dependent Claim
25 words
The structure of Claim 15 characterized in that said plug of dielectric comprises a plug of silicon oxide formed through a pinhole in said dielectric.
References Cited (Backward Citations)
No citation records indexed.
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