EP0073075A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device comprising polycrystalline silicon and method of producing the same
Assignee: Koninklijke Philips NV
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Filing: 1982-07-28
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Granted: —
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Expires: 2002-07-28
Abstract
Abstract The invention relates to a semiconductor device having a semiconductor body which comprises a circuit element having doped polycrystalline silicon.The doping comprises carbon in a concentration higher than 1 ppm. Polysilicon thus doped has properties which are not influenced by temperature treatments of the semiconductor body.
Inventors
- 👤 Jan Bloem
- 👤 Wilhelmus A.P. Claassen
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 13:51
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D62/00; H10D62/40; H10D62/80; H10D62/83; H10D62/834; H10D64/01314; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/40; H10P14/416; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/918
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
42 words
A semiconductor device having a semiconductor body which comprises a circuit element with a part formed from doped polycrystalline silicon characterized in that the polycrystalline silicon is doped with carbon in a concentration which is higher than 1 part per million (ppm.).
Claim 2
Dependent Claim
42 words
A semiconductor device having a semiconductor body which comprises a circuit element with a part formed from doped polycrystalline silicon characterized in that the polycrystalline silicon is doped with carbon in a concentration which is higher than 1 part per million (ppm.).
Claim 3
Dependent Claim
24 words
A semiconductor device as claimed in Claim 1, characterized in that the polycrystalline silicon is further doped with a dopant determining the conductivity type.
Claim 4
Dependent Claim
24 words
A semiconductor device as claimed in Claim 1 or 2, characterized in that the polycrystalline silicon forms the gate electrode of a MOS transistor.
Claim 5
Dependent Claim
25 words
A semiconductor device as claimed in any of the preceding Claims, characterized in that the polycrystalline silicon locally forms a resistor on the semiconductor body.
Claim 6
Dependent Claim
21 words
A semiconductor device as claimed in any of the preceding Claims, characterized in that the polycrystalline silicon forms a resistance layer.
Claim 7
Independent Claim
42 words
A method of manufacturing a semiconductor device claimed in any of the Claims 1 to 5, characterized in that the doped polycrystalline silicon is formed from a gaseous silicon compound and a gaseous unsaturated carbon compound at a temperature above 700 C.
Claim 8
Dependent Claim
20 words
A method of manufacturing a semiconductor device as claimed in Claim 6, characterized in that the carbon compound is ethyne.
Claim 9
Dependent Claim
35 words
A method of manufacturing a semiconductor device as claimed in Claim 6 or 7, characterized in that the polycrystalline silicon is used as a diffusion source to obtain a doped region in the semiconductor body.
References Cited (Backward Citations)
No citation records indexed.
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