EP0070737A2
Expired / Lapsed
EP
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Semiconductor device having an electrode, and method for producing the same
Assignee: Fujitsu Ltd
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Filing: 1982-07-21
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Granted: —
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Expires: 2002-07-21
Abstract
Abstract A semiconductor device having a conductor line free of cracks is produced by forming an insulating layer (11) on a semiconductor substrate (12), opening a contact hole in the insulating layer (11), forming a contact electrode (14b) consisting of high-melting point metal or a silicide of a high-melting point in the contact hole, filling a gap (15) between the contact electrode and the side of the contact hole with polycrystalline silicon (16a) to form a substantially level surface, forming a conductor line on the level surface, and alloying the polycrystalline silicon (16a) with the conductor line (17) and/or the contact electrode (14b) by heating.
Inventors
- 👤 Kazunori Imaoka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-24 05:40
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/062; H10W20/056; H10W20/058; H10W20/40
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
99 words
A semiconductor device comprising an insulating layer (11) which is formed on a semiconductor substrate (12) or a conductor line and is provided with a contact hole therein; a contact electrode (14b) formed in the contact hole; and a conductor line lying on the contact electrode (14b) and on the insulating layer (11), characterised in that a gap (15) between the contact electrode (14b) and the side of the insulating layer (11) is filled with an alloy of polycrystalline silicon (16a) and at least one of the conductor line lying on the contact electrode and the contact electrode (14b).
Claim 2
Dependent Claim
99 words
A semiconductor device comprising an insulating layer (11) which is formed on a semiconductor substrate (12) or a conductor line and is provided with a contact hole therein; a contact electrode (14b) formed in the contact hole; and a conductor line lying on the contact electrode (14b) and on the insulating layer (11), characterised in that a gap (15) between the contact electrode (14b) and the side of the insulating layer (11) is filled with an alloy of polycrystalline silicon (16a) and at least one of the conductor line lying on the contact electrode and the contact electrode (14b).
Claim 3
Dependent Claim
32 words
A semiconductor device according to claim 1, characterisedin that the contact electrode (14b) consists of a material selected from the group consisting of molybdenum, tantalum, titanium, tungsten, platinum, and the silicides thereof.
Claim 4
Dependent Claim
38 words
A semiconductor device according to claim 1 or claim 2, characterised in that the conductor line lying on the contact electrode consists of a metal selected from the group consisting of aluminium, molybdenum, tantalum, titanium, tungsten, and platinum.
Claim 5
Independent Claim
122 words
A method of producing a semiconductor device comprising the steps of forming an insulating layer (11) on a semiconductor substrate (12) or a conductor line; - opening a contact hole in the insulating layer (11); forming a contact electrode (14b) in the contact hole; and forming a conductor line on the contact electrode (l4b) and insulating layer (11); characterised in that the method further comprises the steps of filling a gap (15) between,the contact electrode (14b) and the side of the insulating layer (11) with polycrystalline silicon (16a) prior to the formation of the conductor line; and alloying the polycrystalline silicon (16a) with at least one of the conductor line formed on the contact electrode and the contact electrode (14b), by heating.
Claim 6
Independent Claim
122 words
A method of producing a semiconductor device comprising the steps of forming an insulating layer (11) on a semiconductor substrate (12) or a conductor line; - opening a contact hole in the insulating layer (11); forming a contact electrode (14b) in the contact hole; and forming a conductor line on the contact electrode (l4b) and insulating layer (11); characterised in that the method further comprises the steps of filling a gap (15) between,the contact electrode (14b) and the side of the insulating layer (11) with polycrystalline silicon (16a) prior to the formation of the conductor line; and alloying the polycrystalline silicon (16a) with at least one of the conductor line formed on the contact electrode and the contact electrode (14b), by heating.
Claim 7
Dependent Claim
64 words
A method according to claim 4, characterised in that the step of filling the gap (24) with polycrystalline silicon (25) comprises depositing polycrystalline silicon (25) in the gap (24) and on a metal layer (23a) formed on the insulating layer (21) during formation of the contact electrode (23b), and subsequently removing the metal layer (23a) and polycrystalline silicon (25) not filling the gap (24).
Claim 8
Dependent Claim
39 words
A method according to claim 4 or claim 5, characterised in that a thin layer (33) of polycrystalline silicon is deposited in the contact hole and on the insulating layer (31) prior to formation of the contact electrade (34b).
Claim 9
Independent Claim
36 words
A method according to any of claims 4 to 6, characterised in that the contact electrode (14b) consists of a material selected from the group consisting of molybdenum, tatalum, titanium, tungsten, platinum and the silicides thereof:
References Cited (Backward Citations)
No citation records indexed.
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