EP0070435A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device comprising a semiconductor substrate bonded to a mounting means
Assignee: Panasonic Holdings Corp
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Filing: 1982-07-01
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Granted: —
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Expires: 2002-07-01
Abstract
Abstract In bonding a surface of a semiconductor substrate onto a mounting means, a multiple layer metal electrode is formed on the surface, the multiple layer comprising at least a chromium-nickel alloy layer, nickel layer and a noble metal layer of a noble metal selected from a group consisting of gold, silver or platinum. Then the noble metal layer is bonded to a solder layer of Pb-Sn-alloy or Ag-Sb-Sn-alloy, which solder layer is formed on a bonding face of the mounting means. By providing the noble metal layer, the bonding force and especially thermal fatigue resistivity are much improved, and is suitable for a high power devices.
Inventors
- 👤 Hirotsugu Hattori
- 👤 Masahiro Kuwagata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 18:44
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/20; H10W70/24; H10W72/00; H10W72/30; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/07337; H10W72/351; H10W72/352; H10W72/50; H10W72/59; H10W72/90; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
102 words
A semiconductor device comprising: a semiconductor substrate (1), a multilayered electrode (3, 4) formed on a surface of said semiconductor substrate (1) and comprising a chromium-nickel alloy layer (3) formed on said surface, a nickel layer (4) formed thereon, a solder layer (6) and a mounting means (8) for holding said semiconductor substrate thereon, characterized by a noble metal layer (5) of a metal selected from a group consisting of gold, silver, platinum and palladium formed further on said multilayered electrode and said solder layer soldering said multilayered electrode onto said mounting means, thereby bonding said semiconductor substrate onto said mounting means.
Claim 2
Dependent Claim
102 words
A semiconductor device comprising: a semiconductor substrate (1), a multilayered electrode (3, 4) formed on a surface of said semiconductor substrate (1) and comprising a chromium-nickel alloy layer (3) formed on said surface, a nickel layer (4) formed thereon, a solder layer (6) and a mounting means (8) for holding said semiconductor substrate thereon, characterized by a noble metal layer (5) of a metal selected from a group consisting of gold, silver, platinum and palladium formed further on said multilayered electrode and said solder layer soldering said multilayered electrode onto said mounting means, thereby bonding said semiconductor substrate onto said mounting means.
Claim 3
Dependent Claim
27 words
A semiconductor device in accordance with claim 1, which further comprises a chromium layer (2) formed between said semiconductor substrate (1) and said chromium-nickel alloy layer (3).
Claim 4
Dependent Claim
32 words
A semiconductor device in accordance with claim 1 or 2, wherein said solder (6) is of a contents that 2 - 10 wt % is Sn and the rest part is lead.
Claim 5
Dependent Claim
39 words
A semiconductor device in accordance with claim 1 or 2, wherein said solder (6) is of a contents that 2 - 10 wt % is silver, 0.1 - 20 wt % is antimony and the rest part is tin.
Claim 6
Dependent Claim
33 words
A semiconductor device in accordance with any of claims 1 to 4, wherein said noble metal layer (5) is of a gold or platinum having a thickness of 500 A - 3000 A.
Claim 7
Dependent Claim
33 words
A semiconductor device in accordance with any of claims 1 to 4, wherein said noble metal layer (5) is of a silver having a thickness of over 1000 A, preferably over 3000 A.
References Cited (Backward Citations)
No citation records indexed.
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