EP0068843A2
Expired / Lapsed
EP
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Method of producing a conductor in a desired pattern on a semiconductor substrate
Assignee: Fujitsu Ltd
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Filing: 1982-06-25
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Granted: —
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Expires: 2002-06-25
Abstract
Abstract A method of producing a semiconductor device, in particular, having a composite conductive structure. A patterned conductor of a transition metal (4) is formed on a substrate (1), the patterned conductor is covered with a layer of amorphous silicon (6), and the surface of the patterned conductor is changed to a layer of the silicide (5) after heat treatment is carried out.
Inventors
- 👤 Noriaki Sato
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 05:15
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0682; C23C14/14; C23C14/16; C23C14/165; C23C14/58; C23C14/5806; C23C14/5893; H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/05; H10D; H10D30/00; H10D30/60; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01316; H10D64/01322; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
86 words
A method of producing a semiconductor device wherein a substrate of a semiconductor material (1) is provided and a conductor of a transition metal (4) is formed in a desired pattern on said substrate (1), characterized by: forming a layer of amorphous silicon (6) on said conductor (4), heating said substrate and said layer of amorphous silicon (6) to a temperature enough to react said layer of amorphous silicon with said conductor, thereby an overlying layer of a silicide (5) of said transition metal is formed.
Claim 2
Independent Claim
86 words
A method of producing a semiconductor device wherein a substrate of a semiconductor material (1) is provided and a conductor of a transition metal (4) is formed in a desired pattern on said substrate (1), characterized by: forming a layer of amorphous silicon (6) on said conductor (4), heating said substrate and said layer of amorphous silicon (6) to a temperature enough to react said layer of amorphous silicon with said conductor, thereby an overlying layer of a silicide (5) of said transition metal is formed.
Claim 3
Dependent Claim
25 words
A method according to claim 1, wherein said transition metal (4) is selected from the group consisting of high melting point metals and noble metals.
Claim 4
Dependent Claim
32 words
A method of claim 2, wherein said high melting point metal is selected from at least one of the group consisting of molybdenum, titanium, niobium, tantalum, tungsten, vanadium, hafnium, zirconium, and chromium.
Claim 5
Dependent Claim
25 words
A method according to claim 2, wherein said noble metal is selected from at least one of the group consisting of nickel, palladium, and platinum.
Claim 6
Dependent Claim
21 words
A method according to claim 1 wherein said layer of amorphous silicon (6) is formed by a process of sputter deposition.
Claim 7
Dependent Claim
25 words
A method according to claim 1 or 5 wherein said layer of amorphous silicon (6) is formed to a thickness of 50 to 200 nm.
Claim 8
Independent Claim
35 words
A method according to any one of claims 1, 5, and 6 wherein as the pretreatment of said sputtering deposition of the amorphous silicon (6), the surface of the transition metal (4) is inversely sputtered.
Claim 9
Independent Claim
42 words
A method according to any one of claims - 1 through 7, wherein prior to the formation of said conductor of transition metal (4), a layer of amorphous silicon (6) is formed on the surface of said substrate of semiconductor material (1).
Claim 10
Dependent Claim
36 words
A method according to claim 1 wherein the substrate including the patterned molybdenum conductor (4) and the layer of amorphous silicon (6) is heated to a temperature of 600°C to 1000°C for 30 to 100 minutes.
References Cited (Backward Citations)
No citation records indexed.
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