EP0068094A2
Expired / Lapsed
EP
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Process for forming a semiconductor device on a silicon ribbon and device thus formed
Assignee: International Business Machines Corp
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Filing: 1982-04-21
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Granted: —
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Expires: 2002-04-21
Abstract
Abstract A process for low-cost forming transistor devices, particularly MOS FETs (20-30), uses a Si ribbon (18) as substrate. A SiO<sub>2</sub> layer (16) is formed on said semicrystalline Si ribbon (18). Poly Si formed on said SiO<sub>2</sub> layer is locally melted and allowed to recrystallize into crystals with a larger grain size than before. An island (20) is selectively etched, in which a MOS FET (21-30) is produced by known techniques.
Inventors
- 👤 Guenter Herbert Schwuttke
- 👤 Kuei H. Yang
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 12:55
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D86/00; H10D86/201; H10P; H10P34/00; H10P34/40; H10P34/42; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1912; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
62 words
A process of forming a semiconductor monolithic structure comprising: providing a semicrystalline ribbon (18) of silicon; forming a silicon dioxide layer (16) on a surface of said ribbon; forming a polysilicon layer (14) on said dioxide layer; and annealing said polysilicon layer to induce localized melting and recrystallization of said polysilicon layer into crystals of larger grain size than those initially formed.
Claim 2
Dependent Claim
62 words
A process of forming a semiconductor monolithic structure comprising: providing a semicrystalline ribbon (18) of silicon; forming a silicon dioxide layer (16) on a surface of said ribbon; forming a polysilicon layer (14) on said dioxide layer; and annealing said polysilicon layer to induce localized melting and recrystallization of said polysilicon layer into crystals of larger grain size than those initially formed.
Claim 3
Dependent Claim
43 words
The process as defined in claim 1, wherein said semicrystalline ribbon (18) of silicon has a thickness of approximately 200 um, said silicon dioxide layer has a thickness of approximately 0,15 um and said layer of polysilicon a thickness of approximately 0,42 um.
Claim 4
Dependent Claim
21 words
The process as defined in claim 1, further comprising the step of forming active devices (20-30) in the recrystallized polysilicon layer.
Claim 5
Dependent Claim
23 words
The process as defined in claim 1, further comprising forming a layer of Si 3 N 4 on said SiO 2 layer (16).
Claim 6
Dependent Claim
20 words
The process as defined in claim 1, in which said annealing step is achieved by means of a laser (12).
Claim 7
Dependent Claim
37 words
A semiconductor monolithic structure comprising: a substrate constituted of a semicrystalline ribbon (18) of silicon, a silicon oxide layer (16) on a surface of said ribbon; and a layer of recrystallized polysilicon (14) on said oxide layer.
Claim 8
Dependent Claim
37 words
A semiconductor monolithic structure comprising: a substrate constituted of a semicrystalline ribbon (18) of silicon, a silicon oxide layer (16) on a surface of said ribbon; and a layer of recrystallized polysilicon (14) on said oxide layer.
Claim 9
Dependent Claim
24 words
The structure as defined in claim 6, in which said semi-crystalline ribbon (18) possesses a defect structure favoring strain-induced recrystallization of said polycrystalline layer.
Claim 10
Dependent Claim
17 words
The structure as defined in claim 6, further comprising active devices formed in said recrystallized polysilicon layer.
Claim 11
Dependent Claim
16 words
The structure as defined in claim 8, in which said active devices are MOS FETS (20-30).
Claim 12
Dependent Claim
22 words
The structure of claim 6, further comprising a layer of Si 3 N 4 on top of said SiO 2 layer (16).
References Cited (Backward Citations)
No citation records indexed.
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