EP0067419A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of manufacturing integrated circuit devices using dielectric isolation
Assignee: Toshiba Corp
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Filing: 1982-06-09
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Granted: —
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Expires: 2002-06-09
Abstract
Abstract A method for manufacturing integrated circuit devices wherein semiconductor elements are insulated by insulation material comprising the following steps of: a) providing a mask pattern (3) on a predetermined semiconductor element region of a semiconductor substrate (1); b) introducing by a first ion implantation impurities of the same conductivity type as that of the substrate (1) into the substrate (1) using the mask pattern (3) as a ion implantation mask; c) etching the substrate (1) and forming a groove (7) there using the mask pattern (3) as an etching mask in the manner that part (6') of the impurities remains under the mask pattern (3); d) introducing by a second ion implantation impurities of the same conductivity type as that of the substrate (1) through the groove (7) into the substrate (1); e) burying insulation material (10) in the groove (7); f) forming a semiconductor element on the predetermined semiconductor element region.
Inventors
- 👤 Kei Kurosawa
- 👤 Tadashi Shibata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 22:14
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/112; H10P30/202; H10P30/204; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/0126; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
160 words
A method for manufacturing integrated circuit devices wherein semiconductor elements are insulated by insulation material comprising the following steps of: a) providing a mask pattern (3) on a predetermined element region of a semiconductor substrate (1); b) etching the substrate (1) and forming a groove (7) therein using the mask pattern (3) as an etching mask; c) introducing impurities of the same conductivity type as that of the substrate (1) through the groove (7) into the substrate (1) by ion-implantation; d) burying insulation material (10) in the groove (7); e) forming semiconductor elements on the predetermined element region; characterized in that the method further includes the step of: f) after step a) and before step b), introducing impurities of the same conductivity type as that of the substrate (1) into the substrate (1) using the mask pattern (3) as an ion-implantation mask in a manner that part of the impurities is introduced under the mask pattern (3) to remain there.
Claim 2
Independent Claim
160 words
A method for manufacturing integrated circuit devices wherein semiconductor elements are insulated by insulation material comprising the following steps of: a) providing a mask pattern (3) on a predetermined element region of a semiconductor substrate (1); b) etching the substrate (1) and forming a groove (7) therein using the mask pattern (3) as an etching mask; c) introducing impurities of the same conductivity type as that of the substrate (1) through the groove (7) into the substrate (1) by ion-implantation; d) burying insulation material (10) in the groove (7); e) forming semiconductor elements on the predetermined element region; characterized in that the method further includes the step of: f) after step a) and before step b), introducing impurities of the same conductivity type as that of the substrate (1) into the substrate (1) using the mask pattern (3) as an ion-implantation mask in a manner that part of the impurities is introduced under the mask pattern (3) to remain there.
Claim 3
Dependent Claim
24 words
The method for manufacturing integrated circuit devices according to claim 1, wherein the mask pattern (3) is also used as mask in step c).
Claim 4
Dependent Claim
23 words
The method for manufacturing integrated circuit devices according to claim 1 or 2, wherein the groove (7) is formed by reactive ion etching.
Claim 5
Dependent Claim
122 words
The method for manufacturing integrated circuit devices according to claim 1, 2 or 3, wherein the method for burying insulation material in the groove comprises the following steps of: 1) forming a silicon oxide layer (10) on the semiconductor substrate having the groove (7) by chemical vapor deposition in plasma; m) etching off the silicon oxide layer (10) at the periphery of the mask pattern (3); n) removing the mask pattern (3); o) providing a new silicon-oxide layer (11) on the silicon oxide layer (10), furthermore providing thereon a melted film (12) and solidifying it; p) etching the solidified film (12) and the new silicon oxide layer (11) in order to leave a flat silicon oxide layer (13) in the groove (7).
Claim 6
Independent Claim
26 words
The method for manufacturing integrated circuit devices according to any of claims 1 to 4, wherein the semiconductor elements are insulated gate type field effect transistors.
Claim 7
Independent Claim
49 words
The method for manufacturing integrated circuit devices according to any of claims 1 to 5, wherein the impurity dose value and the acceleration voltage are changed during the first ion implantation in order to have the impurity concentration decreasing with the depth from the substrate surface to the inside.
Claim 8
Independent Claim
39 words
The method for manufacturing integrated circuit devices according to any of claims 1 to 6, wherein the first ion implantation is carried out under the condition that a film (2) exists all over the surface of the substrate (1).
Claim 9
Independent Claim
37 words
The method for manufacturing integrated circuit devices according to any of claims 1 to 7, wherein the method further includes the step of diffusing the impurities introduced into the substrate (1) after step (b) before step (c).
Claim 10
Independent Claim
33 words
The method for manufacturing integrated circuit devices according to any of claims 1 to 8, wherein the impurity distribution is projected into the region under the predetermined element.region by the second ion implantation.
References Cited (Backward Citations)
No citation records indexed.
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