EP0066280A2
Expired / Lapsed
EP
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Method for manufacturing semiconductor device
Assignee: Toshiba Corp
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Filing: 1982-05-28
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Granted: —
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Expires: 2002-05-28
Abstract
Abstract The invention provides a method for manufacturing a semiconductor device, comprising the steps of: forming a conductive material pattern (6) covered with a first insulating film (5) directly or through an insulating layer (4) on a semiconductor substrate (1): forming a second insulating film (10) on the surface of the semiconductor substrate (1) and the side surfaces of the conductive material pattern (6); forming a masking material layer (11) to cover the entire surface of the structure; and etching the masking material layer (11) by anisotropic etching to form a masking material pattern (11') on the surface part of the second insulating film (10) formed on the side surfaces of the conductive material pattern (6). The masking material pattern (11') is used as a mask to form self-aligned contact holes (12) or self-aligned impurity regions.
Inventors
- 👤 Yoshitaka Sasaki
- 👤 Koichi Kanzaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-24 02:53
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D10/00; H10D10/01; H10D10/051; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D64/00; H10D64/01; H10D64/021; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10P; H10P76/00; H10P76/40; H10P76/408; H10P76/4085
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
109 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a conductive material pattern (6) covered with a first insulating film (5) directly or through an insulating layer (4) on a semiconductor substrate (1); forming a second insulating film (10) on the surface of said semiconductor substrate (1) and on the side surfaces of said conductive material pattern (6); forming a masking material layer (11) to cover an entire surface; and etching said masking material layer (11) by anisotropic etching to form a masking material pattern (11') on a surface part of said second insulating film (10) formed on the side.surfaces of said conductive material pattern (6).
Claim 2
Independent Claim
109 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a conductive material pattern (6) covered with a first insulating film (5) directly or through an insulating layer (4) on a semiconductor substrate (1); forming a second insulating film (10) on the surface of said semiconductor substrate (1) and on the side surfaces of said conductive material pattern (6); forming a masking material layer (11) to cover an entire surface; and etching said masking material layer (11) by anisotropic etching to form a masking material pattern (11') on a surface part of said second insulating film (10) formed on the side.surfaces of said conductive material pattern (6).
Claim 3
Dependent Claim
40 words
A method according to claim 1, further comprising the step of forming contact holes (12) by etching said second insulating layer (10) formed on the surface of said semiconductor substrate (1), using said masking material pattern (11') as a mask.
Claim 4
Dependent Claim
32 words
A method according to claim 1, further comprising the step of forming impurity regions by ion-implanting an impurity in said semiconductor substrate (1), using said masking material pattern (11') as the mask.
Claim 5
Independent Claim
28 words
A method according to any one of claims 1 to 3, wherein said second insulating film (10) is formed to cover an entire surface by the CVD method.
Claim 6
Dependent Claim
16 words
A method acording to claim 4, wherein said second insulating film (4) comprises'an Si0 2 film.
Claim 7
Independent Claim
43 words
A method according to any one of claims 1 to 3, wherein said second insulating film (51) is formed thinly on the surface of said semiconductor substrate (41) and thickly on the side surfaces of said conductive material pattern (45) by wet oxidation.
Claim 8
Dependent Claim
17 words
A method according to claim 4, wherein said first insulating film (5) comprises an SiO 2 film.
Claim 9
Dependent Claim
29 words
A method according to claim 6, wherein said first insulating film comprises a laminate of an SiO 2 film (46) and an Si 3 N 4 film (47) .
Claim 10
Independent Claim
44 words
A method according to any one of claims 1 to 3 , wherein said conductive material pattern (6) comprises- a material selected from the group consisting of impurity-doped polycrystalline silicon, impurity-doped amorphous silicon, a refractory metal, a metal silicide, Al and an Al alloy.
Claim 11
Independent Claim
30 words
A method according to any one of claims 1 to 3, wherein said masking material layer (11) comprises a material which allows selective etching of said second insulating film (10).
Claim 12
Dependent Claim
33 words
A method according to claim 10, wherein said masking material layer (11) comprises a material selected from the group consisting of undoped polycrystalline silicon, a metal silicide, silicon nitride, and an organic material.
Claim 13
Independent Claim
19 words
A method according to any one of claims 1 to 3, wherein the anisotropic etching is reactive ion etching.
References Cited (Backward Citations)
No citation records indexed.
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