EP0066042A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Methods of processing a silicon substrate for the formation of an integrated circuit therein
Assignee: International Business Machines Corp
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Filing: 1982-03-04
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Granted: —
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Expires: 2002-03-04
Abstract
Abstract A region of a silicon substrate is simultaneously etched and a silicon dioxide deposit formed on the sidewalls of the etched region by masking the substrate except in the region to be etched and subjecting the substrate to a plasma in a gas containing a fluorohalogenohydrocarbon and oxygen, the oxygen content being between 40 and 80 percent by volume. Thus, a trench (36) is plasma etched in a region of a silicon substrate (30) not protected by a masking layer (32) and a silicon dioxide deposit (34) is formed on the sidewalls of the trench (36). The fluorohalogenohydrocarbon may be CCl 2 F 2 . Other hydrocarbons containing chlorine or bromine or iodine, as well as fluorine, may also be used.
Inventors
- 👤 Reginald Frank Lever
- 👤 Karl Heinz Raacke
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 21:21
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6319; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/69; H10P50/691; H10P50/693; H10P50/694
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
64 words
A method of processing a silicon substrate for the formation of an integrated circuit therein, including covering all except a limited portion of the silicon substrate (30) with a masking layer (32), the method being characterised by simultaneously plasma etching a trench (36) in said limited portion of the substrate and forming a deposit of silicon dioxide (34) on the sidewalls of the trench.
Claim 2
Independent Claim
64 words
A method of processing a silicon substrate for the formation of an integrated circuit therein, including covering all except a limited portion of the silicon substrate (30) with a masking layer (32), the method being characterised by simultaneously plasma etching a trench (36) in said limited portion of the substrate and forming a deposit of silicon dioxide (34) on the sidewalls of the trench.
Claim 3
Dependent Claim
60 words
A method as claimed in claim 1, in which the simultaneous plasma etching of the trench and formation of the silicon dioxide deposit on the sidewalls of the trench is effected by plasma etching said limited portion of the silicon substrate with a gas containing a flurohalogenohydrocarbon and oxygen, the oxygen content being between 40 and 80 percent by volume.
Claim 4
Independent Claim
74 words
A method of processing a silicon substrate for the formation of an integrated circuit therein characterised by forming in the substrate a trench having a silicon dioxide deposit on the sidewalls thereof by subjecting a limited portion of the substrate exposed through a window in a masking layer on the substrate to a plasma formed in a gas containing a flurohalogenohydrocarbon and oxygen, the oxygen content being between 40 and 80 percent by volume.
Claim 5
Independent Claim
74 words
A method of processing a silicon substrate for the formation of an integrated circuit therein characterised by forming in the substrate a trench having a silicon dioxide deposit on the sidewalls thereof by subjecting a limited portion of the substrate exposed through a window in a masking layer on the substrate to a plasma formed in a gas containing a flurohalogenohydrocarbon and oxygen, the oxygen content being between 40 and 80 percent by volume.
Claim 6
Independent Claim
91 words
A method of processing a silicon substrate for the formation of an integrated circuit therein, including covering all except a limited portion of the silicon substrate with a masking layer, the method being characterised by subjecting the masked substrate to a plasma formed in a gas containing a fluorohalogenohydrocarbon and oxygen, the oxygen content being between 40 and 80 percent by volume, so that a trench is etched by the plasma in said limited portion of the substrate and a silicon dioxide deposit is formed on the sidewalls of the trench.
Claim 7
Independent Claim
91 words
A method of processing a silicon substrate for the formation of an integrated circuit therein, including covering all except a limited portion of the silicon substrate with a masking layer, the method being characterised by subjecting the masked substrate to a plasma formed in a gas containing a fluorohalogenohydrocarbon and oxygen, the oxygen content being between 40 and 80 percent by volume, so that a trench is etched by the plasma in said limited portion of the substrate and a silicon dioxide deposit is formed on the sidewalls of the trench.
Claim 8
Independent Claim
83 words
A method of processing a silicon substrate for the formation of an integrated circuit therein, comprising contacting the substrate with a plasma formed in a gas containing a fluorohalogenohydrocarbon and oxygen, the oxygen content being between 40 and 80 percent by volume characterised by covering all except a limited portion of the substrate with a masking layer so that a trench is etched by the plasma in said limited portion and a silicon dioxide deposit is formed on the sidewalls of the trench.
Claim 9
Independent Claim
83 words
A method of processing a silicon substrate for the formation of an integrated circuit therein, comprising contacting the substrate with a plasma formed in a gas containing a fluorohalogenohydrocarbon and oxygen, the oxygen content being between 40 and 80 percent by volume characterised by covering all except a limited portion of the substrate with a masking layer so that a trench is etched by the plasma in said limited portion and a silicon dioxide deposit is formed on the sidewalls of the trench.
Claim 10
Independent Claim
34 words
A method as claimed in any preceding claim, in which a silicon dioxide deposit is also formed over the masking layer as etching of the limited portion of the substrate by the plasma progresses.
Claim 11
Independent Claim
15 words
A method as claimed in any preceding claim, in which the fluorohalogenohydrocarbon is a fluorochlorohydrocarbon.
Claim 12
Dependent Claim
25 words
A method as claimed in claim 7, in which the gas contains 60 percent oxygen by volume and 40 percent CC1 2 F 2 .
References Cited (Backward Citations)
No citation records indexed.
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