Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
410 words
A multi-phase bridge arrangement including first and second d.c. input bus bars and at least two a.c. output bus bars, the number of said output bus bars being equal to the number of phases of the a.c. output to be produced in use, characterized in that there is provided first and second sets (13, 14) of transistor/diode assemblies, each transistor/diode assembly (15, 16; 115, 116) of the first set (13) being electrically connected between the first d.c. input bus bar (11; 23; 123) and a respective one of the a.c. output bus bars (17; 26; 126), and each transistor/diode assembly (18,,19; 118, 119) of the second set (14) being electrically connected between the second d.c. input bus bar (12; 24; 124) and a respective one of said a.c. output bus bars (17; 26; 126), each transistor/diode assembly including a diode (16, 19; 116, 119) which is electrically connected in reverse conduction mode across the current carrying zones of a transistor (15, 18; 115, 118), with the cathode zone of the diode and the interconnected zone of the transistor of each assembly of the first set of assemblies being electrically connected to the positive d.c. input bus bar (11; 23; 123), the anode zone of the diode and the interconnected zone of the transistor of each assembly of the first set of assemblies being electrically connected to a respective one of said a.c. output bus bars and with the anode zone of the diode and the interconnected zone of the transistor of each assembly of the second set of assemblies being electrically connected to the negative d.c. input bus bar (12; 24; 124), the cathode zone of the diode and the interconnected zone of the transistor of each assembly of the second set of assemblies being electrically connected to a respective one of said a.c. bus bars, an input terminal (32; 132) having a plurality of electrical contacts each being electrically connected to the control zone of the transistor of a respective one of said transistor/diode assemblies, and a heat sink (21; 121) having an electrically insulating layer (22; 122) on one major surface thereof and in thermal contact therewith, each transistor being in thermal contact with the heat sink by way of a bus bar part (23, 25a; 23, 24; 120, 125) to which it is connected, each of the bus bar parts being secured to said insulating layer so as to be in thermal contact with the heat sink.
Claim 2
Dependent Claim
410 words
A multi-phase bridge arrangement including first and second d.c. input bus bars and at least two a.c. output bus bars, the number of said output bus bars being equal to the number of phases of the a.c. output to be produced in use, characterized in that there is provided first and second sets (13, 14) of transistor/diode assemblies, each transistor/diode assembly (15, 16; 115, 116) of the first set (13) being electrically connected between the first d.c. input bus bar (11; 23; 123) and a respective one of the a.c. output bus bars (17; 26; 126), and each transistor/diode assembly (18,,19; 118, 119) of the second set (14) being electrically connected between the second d.c. input bus bar (12; 24; 124) and a respective one of said a.c. output bus bars (17; 26; 126), each transistor/diode assembly including a diode (16, 19; 116, 119) which is electrically connected in reverse conduction mode across the current carrying zones of a transistor (15, 18; 115, 118), with the cathode zone of the diode and the interconnected zone of the transistor of each assembly of the first set of assemblies being electrically connected to the positive d.c. input bus bar (11; 23; 123), the anode zone of the diode and the interconnected zone of the transistor of each assembly of the first set of assemblies being electrically connected to a respective one of said a.c. output bus bars and with the anode zone of the diode and the interconnected zone of the transistor of each assembly of the second set of assemblies being electrically connected to the negative d.c. input bus bar (12; 24; 124), the cathode zone of the diode and the interconnected zone of the transistor of each assembly of the second set of assemblies being electrically connected to a respective one of said a.c. bus bars, an input terminal (32; 132) having a plurality of electrical contacts each being electrically connected to the control zone of the transistor of a respective one of said transistor/diode assemblies, and a heat sink (21; 121) having an electrically insulating layer (22; 122) on one major surface thereof and in thermal contact therewith, each transistor being in thermal contact with the heat sink by way of a bus bar part (23, 25a; 23, 24; 120, 125) to which it is connected, each of the bus bar parts being secured to said insulating layer so as to be in thermal contact with the heat sink.
Claim 3
Dependent Claim
91 words
A bridge arrangement as claimed in claim 1 characterized in that bi-polar transistors are used and each transistor is an n-p-n device, the collector zone of each transistor of the first set of transistor/diode assemblies being in thermal contact with the heat sink by way of part (23; 120) of the positive d.c. input bus bar, while the collector zone of each transistor of the second set of transistor/diode assemblies is in thermal contact with the heat sink by way of part (25a; 125) of a respective a.c. output bus bar.
Claim 4
Dependent Claim
104 words
A bridge arrangement as claimed in claim 1 characterized in that bi-polar transistors are used and each transistor of the first set of assemblies is an n-p-n device, while each transistor of the second set is a p-n-p device, the collector zone of each transistor of the first set of assemblies being in thermal contact with the heat sink by way of part (23) of the positive d.c. input bus bar, while the collector zone of each transistor of the second set of assemblies is in thermal contact with the heat sink by way of part (24) of the negative d.c. input bus bar.
Claim 5
Dependent Claim
88 words
A bridge arrangement as claimed in claim 1 characterized in that field effect transistors are used and each transistor is an n-channel device, the drain zone of each transistor of the first set of transistor/diode assemblies being in thermal contact with the heat sink by way of part of the positive d.c. input bus bar, while the drain zone of each transistor of the second set of transistor/diode assemblies is in thermal contact with the heat sink by 'way of part of a respective a.c. output bus bar.
Claim 6
Dependent Claim
106 words
A bridge arrangement as claimed in claim 1 characterized in that field effect transistors are used and each transistor of the first set of assemblies is an n-, channel device, while each transistor of the second set is a p-channel device, the collector zone of each transistor of the first set of assemblies being in thermal contact with the heat sink by way of part (23) of the positive d.c. input bus bar, while the collector zone of each transistor of the second set of assemblies is in thermal contact with the heat sink by way of part (24) of the negative d.c. input bus bar.