EP0064613A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device having a plurality of element units operable in parallel
Assignee: Toshiba Corp
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Filing: 1982-04-16
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Granted: —
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Expires: 2002-04-16
Abstract
Abstract A semiconductor device having current suppressing layers (54 1 , 54 2 ,...,) for suppressing the current which flows in the lateral direction between adjacent element units. Each element unit has a semiconductor substrate (40. 42) of at least one layered structure, a base layer (44) of a first conductivity type which is formed on the semiconductor substrate (40, 42), and a plurality of emitter layers (46 1 , 46 2 ,...,) which are formed on the surface of the base layer 44. The current suppressing layers (46 1 , 46 2 ,...,) are formed in the regions of the base layer (44) which are between adjacent emitter layers (46 1 . 46 2 ,...,).
Inventors
- 👤 Azuma Makoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 21:46
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/121; H10D18/00; H10D18/60; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10D62/135; H10D62/17; H10D62/192; H10D62/206; H10D84/131; H10D84/133
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
127 words
A semiconductor device having a plurality of element units, each of said plurality of element units comprising a semiconductor substrate of at least one layer, a first base layer of a first conductivity type formed on said semiconductor substrate, a plurality of first emitter layers of a second conductivity type arranged on a surface of said first base layer, and said plurality of element units being operable parallel to each other, characterized in that a current suppressing layer (54, 58, 60, 82, 86, 88) is formed in a region of said first base layer (44, 72) between said first emitter layers (46 1 , 46 2 ,..., 74 1 , 74 2 ,...) whereby the current flow in a lateral direction between said element units is suppressed.
Claim 2
Dependent Claim
127 words
A semiconductor device having a plurality of element units, each of said plurality of element units comprising a semiconductor substrate of at least one layer, a first base layer of a first conductivity type formed on said semiconductor substrate, a plurality of first emitter layers of a second conductivity type arranged on a surface of said first base layer, and said plurality of element units being operable parallel to each other, characterized in that a current suppressing layer (54, 58, 60, 82, 86, 88) is formed in a region of said first base layer (44, 72) between said first emitter layers (46 1 , 46 2 ,..., 74 1 , 74 2 ,...) whereby the current flow in a lateral direction between said element units is suppressed.
Claim 3
Dependent Claim
48 words
A semiconductor device according to claim 1, characterized in that said suppressing layer (54, 58, 60, 82, 86, 88) is comprised of a plurality of suppressing layer portions having at least one first emitter layer (46 1 , 46 2 ,..., 74 1 , 74 2 ,...) therebetween.
Claim 4
Dependent Claim
36 words
A semiconductor device according to claim 1, characterized in that said semiconductor substrate including a second base layer (42) of said second conductivity type formed on a second emitter layer (40) of said first conductivity type.
Claim 5
Dependent Claim
33 words
A semiconductor device according to claim 1, characterized in that said semiconductor substrate including a collector layer of said second conducting type, said first base layer (72) formed on said collector layer (70).
Claim 6
Dependent Claim
35 words
A semiconductor device according to claim 3 or 4, characterized in that said current supressing layer (54) is a semiconductor layer of said second conductivity type and oxtending only into said first base layer (44).
Claim 7
Dependent Claim
27 words
A semiconductor device according to claim 1, characterized in that said current suppressing layer (58, 86) comprises a low impurity concentration layer of said first conductivity type.
Claim 8
Dependent Claim
20 words
A semiconductor device according to claim 1, characterized in that said current suppressing layer (60, 88) comprises an insulation film.
References Cited (Backward Citations)
No citation records indexed.
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