EP0063749A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Composite circuit for power semiconductor switching
Assignee: General Electric Co
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Filing: 1982-04-15
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Granted: —
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Expires: 2002-04-15
Abstract
Abstract A solid state composite control circuit includes a normally-off gating device connected in series with a normally-on high voltage semiconductor device so that the combination operates as a normally-off high power semiconductor device. The control device is a low voltage semiconductor device, which can switch rapidly with very low gate turnoff current during turn-off of the composite circuit. In a particular example, a low voltage, normally-off, MOSFET is connected in series with the cathode of a high voltage, normally-on FCT. In another example, a low voltage, normally-off, MOSFET is connected in series with the source of a high voltage, normally-on JFET. The composite circuit has a very high turn-off gain as well as high dv/dt and di/dt capability.
Inventors
- 👤 Bantval Jayant Baliga
- 👤 Michael Stuart Adler
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 12:02
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/687; H03K17/6871; H03K17/567
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
108 words
A composite control circuit comprising: a high voltage normally-on semiconductor device having first and second main terminals and a gate terminal; and a low voltage normally-off semiconductor device having first and second main terminals and a gate terminal; said gate terminal of said high voltage normally-on device being connected to said first main terminal of said low voltage normally-off device; and said second main terminal of said low voltage normally-off device being connected to said second main terminal of said high voltage normally-on device; current flow through said composite circuit being controlled by application of a control signal to said gate terminal of said low voltage normally-off device.
Claim 2
Dependent Claim
108 words
A composite control circuit comprising: a high voltage normally-on semiconductor device having first and second main terminals and a gate terminal; and a low voltage normally-off semiconductor device having first and second main terminals and a gate terminal; said gate terminal of said high voltage normally-on device being connected to said first main terminal of said low voltage normally-off device; and said second main terminal of said low voltage normally-off device being connected to said second main terminal of said high voltage normally-on device; current flow through said composite circuit being controlled by application of a control signal to said gate terminal of said low voltage normally-off device.
Claim 3
Dependent Claim
122 words
The composite control circuit of claim 1 wherein: said high voltage normally-on semiconductor device comprises a high voltage normally-on field controlled thyristor having an anode terminal, a cathode terminal and a gate terminal: and said low voltage normally-off semiconductor device comprises a low voltage normally-off field effect transistor having a source terminal, a drain terminal, and a gate terminal: said cathode terminal of said field controlled thyristor being connected to said drain terminal of said field effect transistor; said gate terminal of said field controlled thyristor being connected to said source terminal of said field effect transistor; current flow through said composite circuit being controlled by application of a voltage signal to said gate terminal of said low voltage field effect transistor.
Claim 4
Dependent Claim
129 words
The composite control circuit of claim 1 wherein: said high voltage normally-on semiconductor device comprises a high voltage normally-on junction field effect transistor having a drain terminal, a source terminal and a gate terminal; and said low voltage normally-off semiconductor device comprises a low voltage normally-off field effect transistor having a source terminal, a drain terminal and a gate terminal; said source terminal of said junction field effect transistor being connected to said drain terminal of said low voltage field effect transistor; said gate terminal of said junction field effect transistor being connected to said source terminal of said low voltage field effect transistor; current flow through said composite circuit being controlled by application of a voltage signal to said gate terminal of said low voltage field effect transistor.
Claim 5
Dependent Claim
114 words
The composite control circuit of claim 1 wherein: said high voltage normally-on semiconductor device comprises a high voltage normally-on field controlled thyristor having an anode terminal, a cathode terminal and a gate terminal; and said low voltage normally-off semiconductor device comprises a low voltage normally-off bipolar transistor having-a collector terminal, an emitter terminal and a base terminal; said cathode terminal of said field controlled thyristor being connected to said collector terminal of said bipolar transistor; said gate terminal of said field controlled thyristor being connected to said emitter terminal of said bipolar transistor; current flow through said composite circuit being controlled by a current signal applied to said base terminal of said bipolar transistor.
Claim 6
Dependent Claim
117 words
The composite control circuit of claim 1 wherein: said high voltage normally-on semiconductor device comprises a high voltage normally-on junction field effect transistor having a drain terminal, a source terminal and a gate terminal; and said low voltage normally-off semiconductor device comprises a low voltage normally-off bipolar transistor, a collector terminal, an emitter terminal and a gate terminal; said source terminal of said junction field effect transistor being connected to said collector terminal of said bipolar transistor; said gate terminal of said junction field effect transistor being connected to said emitter terminal of said bipolar transistor; current flow through said composite circuit being controlled by a current signal applied to said base terminal of said bipolar transistor.
References Cited (Backward Citations)
No citation records indexed.
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