EP0063421A2
Expired / Lapsed
EP
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High speed photoconductive detector
Assignee: Raytheon Co
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Filing: 1982-03-26
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Granted: —
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Expires: 2002-03-26
Abstract
Abstract A high speed photoconductive detector is disclosed which comprises two interdigital metal electrodes placed on a photoconductive (i.e., semiconductor) material. The metal electrodes are selected to form non-blocking contacts with the semiconductor material. An appropriate bias generates an active region. Current is induced in the active region under optical illumination due to photo-carrier generation. The interdigital geometry allows for a large device cross-section and small carrier transit distance. Integration of a transmission line eliminates the need for bonding wires.
Inventors
- 👤 Charles W. Slayman
- 👤 Luis Figueroa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 19:29
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/10; H10F77/00; H10F77/20
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
89 words
A high speed photoconductive detector responsive to incident optical radiation comprising: a) a region of semiconductor material capable of withstanding a high enough electric field to permit generation of holes and electrons at their saturation velocity and having a bandgap less than the energy of said optical radiation; b) a pair of interdigitated metal electrodes formed on said region, said metal electrodes forming non-blocking contacts with said region, with each digit less than about 5 µm apart; and c) means for connecting each metal electrode to a transmission line.
Claim 2
Dependent Claim
89 words
A high speed photoconductive detector responsive to incident optical radiation comprising: a) a region of semiconductor material capable of withstanding a high enough electric field to permit generation of holes and electrons at their saturation velocity and having a bandgap less than the energy of said optical radiation; b) a pair of interdigitated metal electrodes formed on said region, said metal electrodes forming non-blocking contacts with said region, with each digit less than about 5 µm apart; and c) means for connecting each metal electrode to a transmission line.
Claim 3
Dependent Claim
16 words
The detector of Claim 1 further comprising means for applying a bias to said metal electrodes.
Claim 4
Dependent Claim
25 words
The detector of Claim 2 in which said semiconductor material comprises GaAs and said bias generates a field of about 30 to 100 kV/cm therein.
Claim 5
Dependent Claim
18 words
The detector of Claim 1 in which said region comprises at least a portion of a semiconductor substrate.
Claim 6
Dependent Claim
15 words
The detector of Claim 4 in which said substrate comprises semi-insulating GaAs or semi-ins.ulating InP.
Claim 7
Dependent Claim
23 words
The detector of Claim 1 in which said region comprises at least a portion of an epitaxial layer formed on a semiconductor substrate.
Claim 8
Dependent Claim
17 words
The detector of Claim 6 in which said epitaxial layer is at least about 1 µm thick.
Claim 9
Dependent Claim
19 words
The detector of Claim 7 in which said epitaxial layer ranges from about 3 to 5 µm in thickness.
Claim 10
Dependent Claim
21 words
The detector of Claim 6 in which said epitaxial layer comprises unintentionally doped n-type GaAs and said substrate comprises semi-insulating GaAs.
Claim 11
Dependent Claim
21 words
The detector of Claim 6 in which said epitaxial layer comprises unintentionally doped n-type (Ga,In)As and said substrate comprises semi-insulating InP.
Claim 12
Dependent Claim
15 words
The detector of Claim 1 in which said connecting means comprises a microstrip transmission line.
Claim 13
Dependent Claim
103 words
A process for fabricating at least one high speed photoconductive detector responsive to incident optical radiation comprising: a) providing at least one region of a semiconductor material capable of withstanding a high enough electric field to permit generation of holes and electrons at their saturation velocity and having a bandgap less than the energy of said optical radiation; b) forming a pair of interdigitated metal electrodes on said at least one region, said metal electrodes forming non-blocking contacts with said region, with each digit less than about 5 um apart; and c) providing means for connecting each metal electrode to a transmission line.
Claim 14
Dependent Claim
103 words
A process for fabricating at least one high speed photoconductive detector responsive to incident optical radiation comprising: a) providing at least one region of a semiconductor material capable of withstanding a high enough electric field to permit generation of holes and electrons at their saturation velocity and having a bandgap less than the energy of said optical radiation; b) forming a pair of interdigitated metal electrodes on said at least one region, said metal electrodes forming non-blocking contacts with said region, with each digit less than about 5 um apart; and c) providing means for connecting each metal electrode to a transmission line.
References Cited (Backward Citations)
No citation records indexed.
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