EP0062302A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
End-point detection in plasma etching of phosphosilicate glass
Assignee: Applied Biosystems Inc
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Filing: 1982-03-31
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Granted: —
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Expires: 2002-03-31
Abstract
Abstract A method for determining the completion of removal by plasma etching of phosphorus doped silicon dioxide from an underlying substrate.
Inventors
- 👤 Barry Gelernt
- 👤 Wallace C. Wang
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-24 14:15
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32917; H01J37/32935; G; G01; G01N; G01N21/00; G01N21/62; G01N21/66; G01N21/67
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
54 words
A method for detecting end-point in the plasma etching of phosphorus doped silicon dioxide layer coated on a substrate, comprising the steps of; etching phosphorus doped silicon dioxide from the substrate within an etching chamber, spectroscopically observing the gases in the etching chamber, noting the disappearance of the phosphorus atomic line from the gases.
Claim 2
Independent Claim
54 words
A method for detecting end-point in the plasma etching of phosphorus doped silicon dioxide layer coated on a substrate, comprising the steps of; etching phosphorus doped silicon dioxide from the substrate within an etching chamber, spectroscopically observing the gases in the etching chamber, noting the disappearance of the phosphorus atomic line from the gases.
Claim 3
Dependent Claim
14 words
A method according to claim 1 wherein the substrate is a single crystal silicon.
Claim 4
Dependent Claim
25 words
A method according to claim 2 wherein a layer of thermal oxide is disposed between the substrate and the layer of phosphorus doped silicon dioxide.
Claim 5
Dependent Claim
24 words
A method according to claim 2 wherein a layer of aluminum is disposed between the substrate and the layer of phosphorus doped silicon dioxide.
Claim 6
Independent Claim
25 words
A method according to claims 1, 2, 3 or 4 wherein the gases are observed over a time interval and within a predetermined wavelength interval.
Claim 7
Dependent Claim
32 words
A method according to claim 5 further including the step of, observing the presence of the phosphorus atomic line straddled by two argon atomic lines at the beginning of the etching process.
References Cited (Backward Citations)
No citation records indexed.
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