EP0061855A1
Expired / Lapsed
EP
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Method for manufacturing semiconductor device
Assignee: Toshiba Corp
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Filing: 1982-03-11
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Granted: —
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Expires: 2002-03-11
Abstract
Abstract Disclosed is a method for manufacturing a semiconductor device of high reliability, high performance and high integration with high yield. The method of this invention has the steps of forming at least one groove (24) in a semiconductor substrate (21 forming a non-single-crystalline semiconductor film (28) to cover an entire surface of the semiconductor substrate (21) including an inner surface of the groove (24), selectively etching the non-single-crystalline semiconductor film (28) so as to leave the non-single-crystalline semiconductor film (28) on at least a side wall of the groove (24), and forming an oxide isolation layer (32) in the groove (24) by thermal oxidation.
Inventors
- 👤 Yoshitaka Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 13:05
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/61; H10P95/00; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/0123; H10W10/014; H10W10/0142; H10W10/10; H10W10/13; H10W10/17; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/944
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
86 words
A method for manufacturing a semiconductor device comprising the steps of: forming at least one groove (24) in a semiconductor substrate (21); forming a non-single-crystalline semiconductor film (28) to cover an entire surface of said semiconductor substrate (21) including an inner surface of said groove (24); selectively etching said non-single-crystalline semiconductor film (28) so as to leave said non-single-crystalline semiconductor film (28) on at least a side wall of said groove (24); and forming an oxide isolation layer (32) in said groove (24) by thermal oxidation.
Claim 2
Independent Claim
86 words
A method for manufacturing a semiconductor device comprising the steps of: forming at least one groove (24) in a semiconductor substrate (21); forming a non-single-crystalline semiconductor film (28) to cover an entire surface of said semiconductor substrate (21) including an inner surface of said groove (24); selectively etching said non-single-crystalline semiconductor film (28) so as to leave said non-single-crystalline semiconductor film (28) on at least a side wall of said groove (24); and forming an oxide isolation layer (32) in said groove (24) by thermal oxidation.
Claim 3
Dependent Claim
40 words
A method according to claim 1, wherein said non-single-crystalline semiconductor film (28) is a member selected from the group consisting of an undoped polycrystalline silicon film, an impurity-doped polycrystalline silicon film, an amorphous silicon film and a metal silicide film.
Claim 4
Dependent Claim
19 words
A method according to claim 1, wherein said non-single-crystalline semiconductor film (28) is selectively etched by reactive ion etching.
Claim 5
Dependent Claim
34 words
A method according to claim 1, wherein oxidation is performed prior to the formation of said non-single-crystalline semiconductor film (28) to form an oxide film (26) on the inner surface of said groove (24).
Claim 6
Dependent Claim
31 words
A method according to claim 1, wherein said semiconductor substrate (21) is selectively etched to form said groove (24), using an insulating film (22) of a predetermined pattern as a mask.
Claim 7
Dependent Claim
27 words
A method according to claim 5, wherein said semiconductor substrate (21) is etched by isotropic etching to form an over-hang (25) of an insulating film pattern (22).
Claim 8
Dependent Claim
29 words
A method according to claim 1, wherein said non-single-crystalline semiconductor film (28) is oxidized by the thermal oxidation to fill said groove (24) with an oxide (30) formed therefrom.
Claim 9
Dependent Claim
33 words
A method according to claim 1, wherein only a surface of said non-single-crystalline semiconductor film (28) is oxidized, so that a width of said groove (24) is narrowed by an oxide formed therefrom.
Claim 10
Independent Claim
43 words
A method according to any one of claims 1 to 8, wherein an oxidation-resistive insulating film (69) is formed to cover said semiconductor substrate (63) including the inner surface of said groove (66) prior to the formation of said non-single-crystalline semiconductor film (70).
Claim 11
Dependent Claim
29 words
A method according to claim 9, wherein said oxidation-resistive insulating film (69) is a member selected from the group consisting of a silicon nitride film and an alumina film.
Claim 12
Dependent Claim
67 words
A method according to claim 9, wherein said non-single-crystalline semiconductor film (118) is selectively etched so as to leave said non-single-polycrystalline semiconductor film (120) only on the side wall of said groove (115); said oxidation-resistive insulating film (117) is selectively etched, using said non-single-crystalline semiconductor film (120) as a mask; and said oxidation-resistive insulating film (117') is formed only on the side wall of said groove (115).
Claim 13
Dependent Claim
85 words
A method according to claim 11, wherein an oxide isolation layer (124) formed in said groove (115) by the thermal oxidation comprises an oxide film (123) which is formed by oxidation of said non-single-crystalline semiconductor film (120) on the side wall of said groove (115) and an oxide film (122) which is formed by permeation of an oxidizing agent from a bottom of said groove (115) and along an inner surface of said oxidation-resistive insulating film (117') on the side wall of said groove (115).
Claim 14
Dependent Claim
77 words
A method according to claim 11, wherein said non-single-crystalline semiconductor film (150) is etched after said oxidation-resistive insulating film (147) is selectively etched; and an oxide isolation layer formed in said groove (145) by the thermal oxidation comprises an oxide film (152) which is formed by permeation of an cxidizing agent from a bottom of said groove (145) and along an inner surface of said oxidation-resistive insulating film (147') on the side wall of said groove (145).
Claim 15
Independent Claim
100 words
A method according to any one of claims 1 to 8, wherein an insulating film, whose thickness is substantially the same as a depth of said groove (102, 103), is formed to cover said semiconductor substrate (101) including the inner surface of said groove (102, 103) after said groove (102, 103) is formed and before said non-single-crystalline semiconductor film (107) is formed; said insulating film is selectively etched; and an insulating film pattern (106) is formed at the center of said groove (103), so that two grooves (107, 108) are formed at both sides of said insulating film pattern (106).
Claim 16
Independent Claim
121 words
A method for manufacturing a semiconductor device comprising the steps of: forming at least one groove (145) in a semiconductor substrate (141); forming an oxidation-resistive insulating film (147) to cover an entire surface of said semiconductor substrate (141) including an inner surface of said groove (145); forming a CVD-Si0 2 film (148) on said oxidation-resistive insulating film (147); selectively etching said CVD-SiO 2 film (148) so as to leave said CVD-Si0 2 film (150) on at least a side wall of said groove (145); etching the oxidation-resistive insulating film (147) using the CVD-Si0 2 film pattern (150) as a mask; removing the CVD-SiO 2 film pattern (150); and forming an oxide isolation layer (152) in said groove (145) by thermal oxidation.
Claim 17
Independent Claim
121 words
A method for manufacturing a semiconductor device comprising the steps of: forming at least one groove (145) in a semiconductor substrate (141); forming an oxidation-resistive insulating film (147) to cover an entire surface of said semiconductor substrate (141) including an inner surface of said groove (145); forming a CVD-Si0 2 film (148) on said oxidation-resistive insulating film (147); selectively etching said CVD-SiO 2 film (148) so as to leave said CVD-Si0 2 film (150) on at least a side wall of said groove (145); etching the oxidation-resistive insulating film (147) using the CVD-Si0 2 film pattern (150) as a mask; removing the CVD-SiO 2 film pattern (150); and forming an oxide isolation layer (152) in said groove (145) by thermal oxidation.
References Cited (Backward Citations)
US4222792A
Cited
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