EP0061593A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Solder support pad for semiconductor devices
Assignee: International Business Machines Corp
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Filing: 1982-03-01
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Granted: —
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Expires: 2002-03-01
Abstract
Abstract A controlled geometric configuration of contact pads (1) for securing solder mounds to semiconductor chip reduces cracking of brittle passivating coatings (58) in the fabrication of components. A bottom Cr layer (2), a concentric intermediate Cr/Cu layer (4) and a top Cu layer (3) have tapered, wedge-shaped peripheral portions. The intermediate and the top layers have about the same diameter, whereas the bottom layer is larger.
Inventors
- 👤 Somnath Bhattacharya
- 👤 Shih-Ming Hu
- 👤 Nicholas George Koopman
- 👤 Chester Charles Oldakowski
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 07:16
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/20; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W70/00; H10W70/60; H10W72/251; H10W72/29; H10W72/90; H10W72/921; H10W72/923; H10W72/941; H10W72/9415; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
107 words
A solder support pad for brittle coatings (58) on semiconductor substrates (6), characterized by first layer (2) of chromium on said coating (58) with outwardly tapered wedge-shaped peripheral portions, second concentric layer (4) of an admixture of chromium and copper over said first layer (2), said second layer (4) having outwardly tapered wedge-shaped peripheral portions with a perimeter smaller than and within the perimeter of said first layer (2), and a third layer (3) of copper over said second layer (4), said third layer (3) having outwardly tapered wedge-shaped peripheral portions with a perimeter substantially equal to and coincident with the perimeter of said second layer (4).
Claim 2
Dependent Claim
107 words
A solder support pad for brittle coatings (58) on semiconductor substrates (6), characterized by first layer (2) of chromium on said coating (58) with outwardly tapered wedge-shaped peripheral portions, second concentric layer (4) of an admixture of chromium and copper over said first layer (2), said second layer (4) having outwardly tapered wedge-shaped peripheral portions with a perimeter smaller than and within the perimeter of said first layer (2), and a third layer (3) of copper over said second layer (4), said third layer (3) having outwardly tapered wedge-shaped peripheral portions with a perimeter substantially equal to and coincident with the perimeter of said second layer (4).
Claim 3
Dependent Claim
27 words
The support pad of claim 1, wherein said coating (58) includes a via hole (33) opposite the central portions of said pad with said pad extending therethrough.
Claim 4
Dependent Claim
22 words
The support pad of claim 1, wherein said coating (58) is selected from the group of glass, quartz and silicon dioxide compositions.
Claim 5
Dependent Claim
127 words
Contact metallurgy for an integrated semiconductor device (6) having circuit elements (52, 26, 59) therein, and a dielectric coating (58) with an aperture (33) therethrough for electrical connection to said elements, characterized by a first layer (2) of chromium over said aperture (33) with outwardly tapered peripheral portions extending on said coating (58) externally of said aperture, a second concentric layer (4) of an admixture of chromium and copper over said first layer (2), said second layer having outwardly tapered peripheral portions defining a perimeter smaller than and within the perimeter of said first layer, and a third layer (3) of copper over said second layer (4), said third layer having outwardly tapered peripheral portions whose perimeter substantially coincides with the perimeter of said second layer (4).
Claim 6
Dependent Claim
127 words
Contact metallurgy for an integrated semiconductor device (6) having circuit elements (52, 26, 59) therein, and a dielectric coating (58) with an aperture (33) therethrough for electrical connection to said elements, characterized by a first layer (2) of chromium over said aperture (33) with outwardly tapered peripheral portions extending on said coating (58) externally of said aperture, a second concentric layer (4) of an admixture of chromium and copper over said first layer (2), said second layer having outwardly tapered peripheral portions defining a perimeter smaller than and within the perimeter of said first layer, and a third layer (3) of copper over said second layer (4), said third layer having outwardly tapered peripheral portions whose perimeter substantially coincides with the perimeter of said second layer (4).
Claim 7
Dependent Claim
12 words
The contact metallurgy of claim 4, further including a solder mound (60).
Claim 8
Dependent Claim
22 words
The contact metallurgy of claim 5, wherein said coating (58) is selected from the group of glass, quartz and silicon dioxide compositions.
References Cited (Backward Citations)
No citation records indexed.
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