EP0061551A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Planar type semiconductor device with a high breakdown voltage
Assignee: Toshiba Corp
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Filing: 1981-12-10
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Granted: —
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Expires: 2001-12-10
Abstract
Abstract A planar type semiconductor device with a high breakdown voltage has a diffusion region (2) of P type formed in a semiconductor layer (1) of N type, at least one guard ring region (7a, 7b) of P type provided surrounding the diffusion region, and an insulating film (3) covering a given portion on a surface of the semiconductor layer of N type. The planar type semiconductor device is further comprised of a first field plate (9a) kept at the potential equal to that of the diffusion region, and a second field plate (9b) which is provided on the insulating film outside a guard ring region and is kept at the potential equal to that of the guard ring region.
Inventors
- 👤 Akio C/O Prof. David H. Navon Nakagawa
- 👤 Tadashi Utagawa
- 👤 Tsuneo Tsukakoshi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 16:07
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/111; H10D64/112; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/665; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D62/106; H10D8/00; H10D8/411
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
152 words
A planar type semiconductor device with a high breakdown voltage having a diffusion region of a second conductivity type formed in a selected portion of a surface of a semiconductor layer of a first conductivity type, at least one guard ring region of a second conductivity type formed in the surface of said semiconductor layer, surrounding said diffusion region at a given distance, and an insulating film covering a given portion of the surface of said semiconductor layer, characterized by a first conductive layer (9a, 20a) which is provided on said insulating film (3, 16) formed outside said diffusion region (2, 13) and is at the potential equal to that of said diffusion area, and a second conductive layer (9b, 20b) which is provided on said insulating layer (3, 16) formed outside said guard ring region (7a, 17) and is kept at the potential equal to that of said guard ring region.
Claim 2
Dependent Claim
152 words
A planar type semiconductor device with a high breakdown voltage having a diffusion region of a second conductivity type formed in a selected portion of a surface of a semiconductor layer of a first conductivity type, at least one guard ring region of a second conductivity type formed in the surface of said semiconductor layer, surrounding said diffusion region at a given distance, and an insulating film covering a given portion of the surface of said semiconductor layer, characterized by a first conductive layer (9a, 20a) which is provided on said insulating film (3, 16) formed outside said diffusion region (2, 13) and is at the potential equal to that of said diffusion area, and a second conductive layer (9b, 20b) which is provided on said insulating layer (3, 16) formed outside said guard ring region (7a, 17) and is kept at the potential equal to that of said guard ring region.
Claim 3
Dependent Claim
27 words
The planar type semconductor device as claimed in claim 1, characterized in that said diffusion region (2) and said semiconductor layer (1) cooperately make up a diode.
Claim 4
Dependent Claim
101 words
The planar type semiconductor device as claimed in claim 1, characterized in that said semiconductor layer (12) of a first conductivity type is formed on another semiconductor layer (11) of a first conductivity type formed on a drain electrode (21) which will serve as a drain region; said diffusion layer (13) of a second conductivity type is formed in said first conductivity -semiconductor layer (12); a source region (14) of a first conductivity type is formed in said diffusion layer; and said source region, said drain region and said diffusion layer cooperately make up a DMOS (double-diffused metal oxide semimconductor) transistor.
References Cited (Backward Citations)
No citation records indexed.
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