EP0060784A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Low melting temperature glass for use over aluminium interconnects of an integrated circuit structure
Assignee: Fairchild Semiconductor Corp
•
Filing: 1982-03-12
•
Granted: —
•
Expires: 2002-03-12
Abstract
Abstract A low temperature insulation glass for use in semiconductor devices comprises a mixture of germanium dioxide, silicon dioxide and phosphorus pentoxide. In the preferred embodiment, the glass comprises a mixture of about 45% to 50% silicon dioxide (SiO 2 ), about 50 % to 45 % of germanium dioxide (GeO 2 ) and about 5% of phosphorus pentoxide (P 2 0 5 ), by weight.
Inventors
- 👤 John M. Pierce
- 👤 William I. Lehrer
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 03:49
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; C; C03; C03C; C03C3/00; C03C3/04; C03C3/062; C03C3/076; C03C3/097; C03C4/00; C03C4/16; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W74/00; H10W74/40; H10W74/43; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H05K3/00; H05K3/22; H05K3/28; H10P14/6923
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
44 words
A low temperature insulation glass for use in semiconductor devices, said insulating glass being comprised by a mixture of from 30% to 70% si0 2 , 30% to 70% of Ge0 2 and 2% to 10% of p 2 O 5 , by weight.
Claim 2
Dependent Claim
44 words
A low temperature insulation glass for use in semiconductor devices, said insulating glass being comprised by a mixture of from 30% to 70% si0 2 , 30% to 70% of Ge0 2 and 2% to 10% of p 2 O 5 , by weight.
Claim 3
Dependent Claim
37 words
Structure as in Claim 1 wherein said glass comprises a mixture of about 45% to 50% Si0 2 , about 50% to 45% of Ge0 2 and about 5% of P 2 O 5 , by weight.
Claim 4
Dependent Claim
59 words
An integrated circuit comprising: a semiconductor material; insulation formed on said semiconductor material: interconnect leads comprising aluminum formed on said insulation and selectively brought into contact with the underlying semiconductor material through openings in said insulation; and characterized by a glass layer formed on said interconnect leads, said glass layer comprising a mixture of germanium, silicon, oxygen and phosphorus.
Claim 5
Dependent Claim
59 words
An integrated circuit comprising: a semiconductor material; insulation formed on said semiconductor material: interconnect leads comprising aluminum formed on said insulation and selectively brought into contact with the underlying semiconductor material through openings in said insulation; and characterized by a glass layer formed on said interconnect leads, said glass layer comprising a mixture of germanium, silicon, oxygen and phosphorus.
Claim 6
Dependent Claim
16 words
Structure as in Claim 3 characterized in that said glass layer has a substantially smooth surface.
Claim 7
Dependent Claim
42 words
Structure as in Claim 3 or 4 characterized in that said glass layer comrpises a mixture of from 30% to 70% BiO 2 , 30% to 70% of GeO 2 and 2% to 10% of p 2 O 5 , by weight.
Claim 8
Dependent Claim
40 words
Structure as in Claim 5 characterized in that said glass layer comprises a mixture of about 45% to 50% SiO 2 , about 50% to 45% of GeO 2 and about 5% of P 2 O 5 , by weight.
References Cited (Backward Citations)
US3669693A
Cited
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.