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EP0060651A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Apparatus including improved cathode for continuous deposition of amorphous material

Assignee: Energy Conversion Devices Inc
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Filing: 1982-03-03
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Granted: —
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Expires: 2002-03-03
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Abstract

Abstract A continuous system for depositing at least one layer of amorphous semiconductor material upon a substrate. Feed and takeup reels advance a thin film substrate through the system. At least one chamber is located intermediate the feed and takeup reels wherein a plasma is generated by the glow discharge of a reaction gas mixture. Apparatus associated with the chamber provides close regulation of plasma/substrate surface equilibrium to assure that a uniform layer of amorphous material is deposited. A chamber cathode, including a top surface electrode is adapted to provide a substantially uniform distribution of reaction gas during deposition by means of a plurality of baffles that equalizes path lenghts from a reaction gas source to the electrode and from the electrode to a vacuum chamber. The electrode is electrically insulated from a plurality of gas exits to confine the plasma to the region between the electrode and the active surface of the substrate. Additional subsystems include a servo-controlled reel drive to regulate substrate tension and an inert gas curtain to isolate the interior of the chamber.

Inventors

  • 👤 Masatsugu Izu
  • 👤 David A. Gattuso
  • 👤 Timothy J. Barnard
  • 👤 Herbert C. Ovshinsky

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-28 22:05
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/54; C23C16/545

Claims Analysis

Total Claims: 25
Claim 1
Independent Claim 125 words
A system for the continuous deposition of at least one layer of amorphous semiconductor material onto a substrate having a surface, said system comprising: a) means for advancing said substrate through said system; b) means for depositing amorphous semiconductor material onto said substrate from a plasma as said substrate is advanced through said system, said means including at least one glow discharge chamber having an entrance and an exit to allow the passage of said substrate therethrough; c) means for controlling the deposition of said amorphous material so that said material is uniformly deposited upon said substrate; and d) said means for controlling the deposition of said amorphous material including apparatus for providing a substantially uniform supply of gas at the surface of the substrate.
Claim 2
Independent Claim 125 words
A system for the continuous deposition of at least one layer of amorphous semiconductor material onto a substrate having a surface, said system comprising: a) means for advancing said substrate through said system; b) means for depositing amorphous semiconductor material onto said substrate from a plasma as said substrate is advanced through said system, said means including at least one glow discharge chamber having an entrance and an exit to allow the passage of said substrate therethrough; c) means for controlling the deposition of said amorphous material so that said material is uniformly deposited upon said substrate; and d) said means for controlling the deposition of said amorphous material including apparatus for providing a substantially uniform supply of gas at the surface of the substrate.
Claim 3
Dependent Claim 64 words
A system as defined in Claim 1 wherein the means for advancing said substrate includes: a) a feed reel; b) a takeup reel; c) means for rotating said takeup reel; and d) said substrate comprising a roll which is unwound from said feed reel and wound onto said takeup reel as said takeup reel is rotated whereby said substrate is advanced through said system.
Claim 4
Dependent Claim 60 words
A system as defined in Claim 2 wherein said means for advancing said substrate is additionally characterized by: a) at least one reel intermediate said feed reel and said takeup reel; b) drive means engaged to said reel; and c) control means engaged to said drive means to regulate tension in said substrate as it is advanced through said system.
Claim 5
Dependent Claim 15 words
A system as defined in Claim 3 which additionally includes means for masking said substrate.
Claim 6
Dependent Claim 72 words
Apparatus as defined in Claim 1 or Claim 4 additionally comprising: a) a source of reaction gas; b) a gas dispenser engaged to said source. c) said dispenser being spaced from said substrate and having a plurality of openings adjacent said substrate; d) a vacuum; and e) means for creating substantially equal gas path lengths from said source to said plurality of openings and from said plurality of openings to said vacuum.
Claim 7
Dependent Claim 22 words
Apparatus as defined in Claim 5 wherein said gas dispenser comprises a planar member oriented substantially parallel to and facing said substrate.
Claim 8
Dependent Claim 20 words
Apparatus as defined in Claim 6 wherein said means for creating substantially equal path lengths comprises at least one baffle.
Claim 9
Dependent Claim 24 words
Apparatus as defined in Claim 7 wherein said at least one baffle defines at least one chamber between said baffle and said planar member.
Claim 10
Dependent Claim 41 words
Apparatus as defined in Claim 8 wherein said planar member includes a first plurality of openings for admitting gas into the region defined by said member and said substrate and a second plurality of openings to evacuate gas from said region.
Claim 11
Dependent Claim 46 words
Apparatus as defined in Claim 9 additionally comprising: a) a power supply; b) said power supply electrically coupled to said planar member for applying a preselected electrical potential thereto; and c) said second plurality of openings is electrically grounded to confine the plasma to said region.
Claim 12
Dependent Claim 17 words
Apparatus as defined in Claim 7 wherein each of said second plurality of openings includes a screen.
Claim 13
Dependent Claim 85 words
A cathode for providing a substantially uniform plasma, derived from at least one reaction gas, at the surface of a substrate spaced therefrom, said cathode comprising: a) inlet means for coupling to a source of reaction gas, said inlet means being evenly distributed with respect to said surface for directing a uniform flow of reaction gas toward said substrate; and b) outlet means substantially coplanar with said inlet means, for coupling to a vacuum, said outlet means being evenly distributed with respect to said surface.
Claim 14
Dependent Claim 85 words
A cathode for providing a substantially uniform plasma, derived from at least one reaction gas, at the surface of a substrate spaced therefrom, said cathode comprising: a) inlet means for coupling to a source of reaction gas, said inlet means being evenly distributed with respect to said surface for directing a uniform flow of reaction gas toward said substrate; and b) outlet means substantially coplanar with said inlet means, for coupling to a vacuum, said outlet means being evenly distributed with respect to said surface.
Claim 15
Independent Claim 100 words
A system for the continuous deposition of at least one layer of amorphous semiconductor material onto a substrate having a surface, said system comprising: a) means for advancing said substrate through said system; b) means for depositing amorphous semiconductor material onto said substrate from a plasma as said substrate is advanced through said system, said means including at least one glow discharge chamber having an entrance and an exit to allow the passage of said sub- . strate therethrough; and c) means for controlling the deposition of said amorphous material so that said material is uniformly deposited upon said substrate.
Claim 16
Independent Claim 100 words
A system for the continuous deposition of at least one layer of amorphous semiconductor material onto a substrate having a surface, said system comprising: a) means for advancing said substrate through said system; b) means for depositing amorphous semiconductor material onto said substrate from a plasma as said substrate is advanced through said system, said means including at least one glow discharge chamber having an entrance and an exit to allow the passage of said sub- . strate therethrough; and c) means for controlling the deposition of said amorphous material so that said material is uniformly deposited upon said substrate.
Claim 17
Dependent Claim 64 words
A system as defined in Claim 13 wherein the means for advancing said substrate include: a) a feed reel; b) a takeup reel; c) means for rotating said takeup reel; and d) said substrate comprising a roll which is unwound from said feed reel and wound onto said takeup reel as said takeup reel is rotated whereby said substrate is advanced through said system.
Claim 18
Dependent Claim 60 words
A system as defined in Claim 14 wherein said means for advancing said substrate is additionally characterized by: a) at least one reel intermediate said feed reel and said takeup reel; b) drive means engaged to said reel; and c) control means engaged to said drive means to regulate tension in said substrate as it is advanced through said system.
Claim 19
Dependent Claim 15 words
A system as defined in Claim 15 which additionally includes means for masking said substrate.
Claim 20
Dependent Claim 76 words
A system as defined in Claim 16 additionally characterized by: a) said system including a first, a second and a third glow discharge chamber; b) said first chamber being adapted to deposit a layer of P-type amorphous semiconductor material; c) said second chamber being adapted to deposit an amorphous layer of intrinsic semiconductor material; and d) said third chamber being adapted to deposit an amorphous layer of N-type semiconductor material to form a PIN semiconductor device.
Claim 21
Dependent Claim 76 words
Apparatus for providing a substantially uniform supply of gas to the surface of a substrate comprising: a) a source of gas; b) a gas dispenser engaged to said source; c) said dispenser being spaced from said substrate and having a plurality of openings adjacent said substrate; d) a vacuum; and e) means for creating substantially equal gas path lengths from said source to said plurality of openings and from said plurality of openings to said vacuum.
Claim 22
Dependent Claim 76 words
Apparatus for providing a substantially uniform supply of gas to the surface of a substrate comprising: a) a source of gas; b) a gas dispenser engaged to said source; c) said dispenser being spaced from said substrate and having a plurality of openings adjacent said substrate; d) a vacuum; and e) means for creating substantially equal gas path lengths from said source to said plurality of openings and from said plurality of openings to said vacuum.
Claim 23
Dependent Claim 22 words
Apparatus as defined in Claim 1 wherein said gas dispenser comprises a planar member oriented substantially parallel to and facing said substrate.
Claim 24
Dependent Claim 20 words
Apparatus as defined in Claim 19 wherein said means for creating substantially equal path lengths comprises at least one baffle.
Claim 25
Dependent Claim 24 words
Apparatus as defined in Claim 20 wherein said at least one baffle defines at least one chamber between said baffle and said planar member.

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