EP0057549A2
Expired / Lapsed
EP
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Semiconductor device
Assignee: Toshiba Corp
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Filing: 1982-01-25
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Granted: —
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Expires: 2002-01-25
Abstract
Abstract Disclosed is a semiconductor body (118), comprising a semiconductor substrate (101) of a first conductivity type, a first semiconductor layer (105) of the first conductivity type formed on the substrate (101), a second semiconductor layer (115) of a second conductivity type, and a first semiconductor region (114) of the second conductivity type formed between the surface of the first semiconductor layer (105) and the substrate (101). The impurity concentration of the first semiconductor region (14) is equal to or lower than that of the second semiconductor layer (115).
Inventors
- 👤 Hiroshi Iwasaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 12:39
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/641; H10D84/642; H10D62/00; H10D62/10; H10D62/13; H10D62/137; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10D84/65; H10D84/658; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/30
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
91 words
A semiconductor body (118), comprising a semiconductor substrate (101) of a first conductivity type; a first semiconductor layer (105) of the first conductivity type formed on the substrate (101); a second semiconductor layer (115) of a second conductivity type formed on the first semiconductor layer (105); and a first semiconductor region (114) of the second conductivity type formed between the surface of the first semiconductor layer (105) and the substrate (101), the impurity concentration in the region (114) being equal to or lower than that in the second semiconductor layer (115).
Claim 2
Dependent Claim
91 words
A semiconductor body (118), comprising a semiconductor substrate (101) of a first conductivity type; a first semiconductor layer (105) of the first conductivity type formed on the substrate (101); a second semiconductor layer (115) of a second conductivity type formed on the first semiconductor layer (105); and a first semiconductor region (114) of the second conductivity type formed between the surface of the first semiconductor layer (105) and the substrate (101), the impurity concentration in the region (114) being equal to or lower than that in the second semiconductor layer (115).
Claim 3
Dependent Claim
42 words
The semiconductor body (118) according to claim 1, wherein a second semiconductor region (106 or 106 1 ) of the second conductivity type high in impurity concentration is buried around the interface between the substrate (101) and the first semiconductor layer (105).
Claim 4
Dependent Claim
51 words
The semiconductor body (118) according to claim 1 or 2, wherein at least one third semiconductor region (117 1 , 117 2 ) of the second conductivity type, which is high in impurity concentration, is formed around the interface between the first semiconductor layer (105) and the second semiconductor layer (115).
Claim 5
Dependent Claim
53 words
The semiconductor body (118) according to claim 3, wherein fourth semiconductor regions (106 2 , 106 3 ) of the second conductivity type high in impurity concentration are buried below the third semiconductor regions (117 1 , 117 2 ) around the interface between the substrate (101) and the first semiconductor layer (105).
Claim 6
Dependent Claim
34 words
The semiconductor body (118) according to claim 4, wherein the fourth semiconductor regions (106 2 , 106 3 ) are directly connected to the third semiconductor regions (117 1 , 117 2 ), respectively.
Claim 7
Dependent Claim
56 words
The semiconductor body (118') according to claim 1 or 2, wherein fifth semiconductor regions (153 1 , 153 2 ) of the first conductivity type high in inpurity concentration are selectively formed across the first semiconductor layer (105) between two adjacent first semiconductor regions (114) or in a manner to surround the first semiconductor regions (114).
Claim 8
Dependent Claim
66 words
The semiconductor body (118') according to claim 3, 4 or 5, wherein a fifth semiconductor region (153 2 to 153 4 ) of the first conductivity type high in impurity concentration is formed across the first semiconductor layer (105) between the third semiconductor regions (117 1 , 117 2 ) or in a manner to surround the third semiconductor regions (117 1 , 117 2 ).
Claim 9
Dependent Claim
49 words
The semiconductor body (118') according to claim 3, 4, 5 or 7, wherein fifth semiconductor regions (153 1 , 153 2 ) of the first conductivity type high in impurity concentration is formed across the first semiconductor layer (105) in a manner to surround the first semiconductor regions (114).
Claim 10
Dependent Claim
86 words
The semiconductor body (118, 118') according to claim 2, 3, 4, 5, 6, 7 or 8, wherein a sixth semiconductor region (116) of the second conductivity type high in impurity concentration is formed within the first semiconductor region (114) or around the interface between the first semiconductor region (114) and the first semiconductor layer (105), one end of said sixth semiconductor region (116) being in contact with the second semiconductor region (106, 106 1 ), with the other end extending into the second semiconductor layer (115).
Claim 11
Dependent Claim
45 words
The semiconductor body (118, 118') according to claim 1, 2 or 6, wherein a seventh semiconductor region (119) of the first conductivity type high in impurity concentration is formed across the second semiconductor layer (115) in a manner to surround the first semiconductor region (114).
Claim 12
Dependent Claim
72 words
The semiconductor body (118, 118') according to claim 3, 4, 5, 7, 8 or 9, wherein seventh semiconductor regions (119) of the first conductivity type high in impurity concentration are selectively formed across the second semiconductor layer (115) between two adjacent first semiconductor regions (114), between the first semiconductor region (114) and the third semiconductor region (117 1 ), and between the third semiconductor regions (117 1 , 11 7 2 ).
Claim 13
Dependent Claim
26 words
The semiconductor body (118, 118') according to claim 11, wherein the seventh semiconductor regions (119) are connected to the fifth semiconductor regions (153 1 to 1534).
Claim 14
Dependent Claim
85 words
The semiconductor body (118, 118') according to claim 10, 11 or 12, wherein the second semiconductor layer (115) is electrically divided by the seventh semiconductor regions (119) so as to form an island region (115 1 ) connected to the first semiconductor region (114), a bipolar element (149) of high breakdown voltage being formed within said island region (115 1 ), and another island regions (115 2 , 115 3 ) within which are formed at least one kind of ordinary semiconductor elements (150, 151).
Claim 15
Dependent Claim
35 words
The semiconductor body (118, 118') according to claim 1, 2 or 6, wherein a dielectric film is selectively formed across the second semiconductor layer (115) in a manner to surround the first semiconductor region (114).
Claim 16
Dependent Claim
61 words
The semiconductor body (118, 118') according to claim 3, 4, 5, 7, 8 or 9, wherein a dielectric film is selectively formed across the second semiconductor layer (115) between two adjacent first semiconductor regions (114), between the first semiconductor region (114) and the third semiconductor region (117 1 ), and between the third semiconductor regions (117 1 , 117 2 ).
Claim 17
Dependent Claim
65 words
The semiconductor body (118, 118') according to claim 15, wherein the second semiconductor layer (115) is electrically divided by the dielectric film so as to form an island region connected to the first semiconductor region (114), a bipolar element of high breakdown voltage being formed within said island region, and another island regions within which are formed at least one kind of ordinary semiconductor elements.
Claim 18
Dependent Claim
63 words
The semiconductor body (118, 118 1 ) according to claim 13 or 16, wherein the ordinary semicondcutor element is an integrated injection logic circuit (151) consisting of a lateral pnp transistor comprising a carrier injection mechanism portion as the emitter region, and a vertical npn transistor comprising the base and collector regions of the pnp transistor as the emitter and base regions, respectively.
Claim 19
Dependent Claim
35 words
The semiconductor body (118, 118') according to claim 13 or 16, wherein the ordinary semiconductor elements comprise an integrated injection logic circuit (151) and a vertical npn transistor (150) operable at high speed (e.g. ECL).
References Cited (Backward Citations)
No citation records indexed.
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