EP0057085A2
Expired / Lapsed
EP
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Method for manufacturing a hybrid integrated circuit device
Assignee: Toshiba Corp
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Filing: 1982-01-21
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Granted: —
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Expires: 2002-01-21
Abstract
Abstract A method for manufacturing a hybrid integrated circuit device comprising a step of forming an Al 2 O 3 layer (22) on a metal substrate (21), a step of forming on the Al 2 O 3 layer (22) a resist layer (23) having a pattern opposite to that of a copper layer (24) which will be formed on the Al 2 O 3 layer (22) by a later step, a step of forming the copper layer (24) on the Af 2 0 3 layer (22) using the resist layer (23) as a mask, a step of impregnating thermosetting material into both the Al 2 O 3 layer (22) and the copper layer (24), and a step of providing at least one semiconductor element (26, 27, 28) on the copper layer (24).
Inventors
- 👤 Kenji Nagashima
- 👤 Hiroshi Matsumoto
- 👤 Masataka Tanaka
- 👤 Hirosi Oodaira
- 👤 Nobuo Iwase
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 02:40
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/22; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/255; H10W70/00; H10W70/01; H10W70/05; H10W70/60; H10W70/67; H10W70/68; H10W70/6875; H10W90/00; H05K1/00; H05K1/02; H05K1/03; H05K1/05; H05K1/053; H05K2201/00; H05K2201/01; H05K2201/0104; H05K2201/0116; H05K2201/0137; H05K2201/0179; H05K2203/00; H05K2203/11; H05K2203/1147; H10W90/701; H10W90/751; H10W90/754; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49144
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
126 words
A method for manufacturing a hybrid integrated circuit device comprising: a step of forming a ceramic layer (22) on a metal substrate.(21) by flame-spraying a ceramic material onto the metal substrate (21); a step of forming on said ceramic layer (22) a resist layer (23) having a pattern opposite to that of a conductive layer (24) which will be formed on said ceramic layer (22) by a later step; a step of forming the conductive layer (24) on said ceramic layer (22) using said resist layer (23) as a mask; a step of impregnating thermosetting insulative material into both said ceramic layer (2) and said conductive layer (24); and a step of providing at least one semiconductor element (26, 27, 28) on said conductive layer (24).
Claim 2
Independent Claim
126 words
A method for manufacturing a hybrid integrated circuit device comprising: a step of forming a ceramic layer (22) on a metal substrate.(21) by flame-spraying a ceramic material onto the metal substrate (21); a step of forming on said ceramic layer (22) a resist layer (23) having a pattern opposite to that of a conductive layer (24) which will be formed on said ceramic layer (22) by a later step; a step of forming the conductive layer (24) on said ceramic layer (22) using said resist layer (23) as a mask; a step of impregnating thermosetting insulative material into both said ceramic layer (2) and said conductive layer (24); and a step of providing at least one semiconductor element (26, 27, 28) on said conductive layer (24).
Claim 3
Dependent Claim
31 words
A method for manufacturing.a hybrid integrated circuit device according to claim 1 further including a step of removing the resist layer (23) after the step of forming the conductive layer (24).
Claim 4
Dependent Claim
37 words
A method for manufacturing a hybrid integrated circuit device according to claim 1 or 2 wherein said step of forming the conductive layer (24) is carried out by flame-spraying a conductive material onto said ceramic layer (22).
Claim 5
Dependent Claim
42 words
A method for manufacturing a hybrid integrated circuit device according to claim 1 wherein said ceramic material is a selected one of Al 2 O 3 , MgO·SiO 2 , 2MgO·SiO 2 , ZrO 2 ·SiO 2 , MgO, BeO and Ti02.
Claim 6
Dependent Claim
21 words
A method for manufacturing a hybrid integrated circuit device according to claim 3 wherein said conductive material is a metal material.
Claim 7
Dependent Claim
19 words
A method for manufacturing a hybrid integrated circuit device according to claim 5 wherein said metal material is copper.
References Cited (Backward Citations)
No citation records indexed.
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