EP0056908A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1981-12-24
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Granted: —
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Expires: 2001-12-24
Abstract
Abstract When a side of hole (27) formed in a layer (26) of a semiconductor device is located on a slope of a step-like portion, the side of the hole (27) is formed so that it has a wave shape. A conductor (28) line traverses the wave side (29) of the hole (27).
Inventors
- 👤 Toru 1573-35 Aza Sozaemonyama Mano
- 👤 Takeshi Fukuda
- 👤 Toshitaka Fukushima
- 👤 Kouji Ueno
- 👤 Kazuo Tanaka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 15:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10P; H10P50/00
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
99 words
A semiconductor device comprising: a semiconductor substrate; an insulating layer covering a surface of said semiconductor substrate and having an uneven surface area; an additional layer formed on said insulating layer and having a hole therein, the end of said additional layer protruding and depressing at different and adjacent portions of the periphery of said hole, at least one of said protruding and depressing portions being located on said uneven surface area; and a wiring layer formed on said insulating layer and additional layer, said wiring layer crossing and covering said protruding and depressing portions of said additional layer.
Claim 2
Dependent Claim
99 words
A semiconductor device comprising: a semiconductor substrate; an insulating layer covering a surface of said semiconductor substrate and having an uneven surface area; an additional layer formed on said insulating layer and having a hole therein, the end of said additional layer protruding and depressing at different and adjacent portions of the periphery of said hole, at least one of said protruding and depressing portions being located on said uneven surface area; and a wiring layer formed on said insulating layer and additional layer, said wiring layer crossing and covering said protruding and depressing portions of said additional layer.
Claim 3
Dependent Claim
18 words
A semiconductor device as recited in claim 1, said protruding and depressing portions forming a geometric wave form.
Claim 4
Dependent Claim
17 words
A semiconductor device as recited in claim 2, wherein said wave form is substantially a square wave.
Claim 5
Dependent Claim
28 words
A semiconductor device as recited in claim 1, wherein said insulating layer is a thermally oxidized silicon dioxide layer and said additional layer is a polycrystalline silicon layer.
Claim 6
Dependent Claim
29 words
A semiconductor device as recited in claim 1, wherein said uneven surface of said insulating layer is formed so that it has a thin portion and a thick portion.
Claim 7
Dependent Claim
34 words
A semiconductor device as recited in claim 1, wherein said uneven surface of said insulating layer is formed by covering the semiconductor substrate having a step-like portion with said insulating layer having uniform thickness.
Claim 8
Dependent Claim
103 words
A semiconductor device comprising: a semiconductor substrate having a step-like portion; an insulating layer covering a surface of said semiconductor substrate and provided with an uneven surface area, said insulating layer having a contact hole, portions of which protrude and depress at different and adjacent portions of the periphery of said hole, at least one of said protruding and depressing portions being placed over said uneven surface area; and a contact layer formed on said insulating layer and on said semiconductor substrate portion exposed in said contact hole, said contact layer crossing and covering said protruding and depressing portions of said contact hole.
Claim 9
Dependent Claim
103 words
A semiconductor device comprising: a semiconductor substrate having a step-like portion; an insulating layer covering a surface of said semiconductor substrate and provided with an uneven surface area, said insulating layer having a contact hole, portions of which protrude and depress at different and adjacent portions of the periphery of said hole, at least one of said protruding and depressing portions being placed over said uneven surface area; and a contact layer formed on said insulating layer and on said semiconductor substrate portion exposed in said contact hole, said contact layer crossing and covering said protruding and depressing portions of said contact hole.
Claim 10
Dependent Claim
18 words
A semiconductor device as recited in claim 7, said protruding and depressing portions forming a geometric wave form.
Claim 11
Dependent Claim
17 words
A semiconductor device as recited in claim 8, wherein said wave form is substantially a square wave.
References Cited (Backward Citations)
No citation records indexed.
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